| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43R16160F-6TLI | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 1 шт |
товар відсутній |
||
| IS43R16320F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43R16320F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 2500 шт |
товар відсутній |
||
| IS43R16320F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43R16320F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 108 шт |
товар відсутній |
||
| IS43R16320F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43R16320F-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43R16320F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43R16320F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 2500 шт |
товар відсутній |
||
| IS43R16320F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 108 шт |
товар відсутній |
||
| IS43R16320F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 108 шт |
товар відсутній |
||
| IS43R16320F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43R16800E-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1 шт |
товар відсутній |
||
| IS43R16800E-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43R16800E-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1 шт |
товар відсутній |
||
| IS43R16800E-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1 шт |
товар відсутній |
||
| IS43R16800E-6TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: reel; tape Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43R32160D-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.6VDC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 200MHz Access time: 5ns Case: LFBGA144 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.6V DC |
товар відсутній |
||
| IS43R32400E-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC Kind of package: in-tray; tube Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 200MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: LFBGA144 Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 5ns кількість в упаковці: 189 шт |
товар відсутній |
||
| IS43R32400E-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC Kind of package: reel; tape Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 200MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: LFBGA144 Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 5ns кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43R32400E-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; -40÷85°C Kind of package: in-tray; tube Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 200MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: LFBGA144 Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 5ns кількість в упаковці: 189 шт |
товар відсутній |
||
| IS43R83200F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II Supply voltage: 2.5V DC Operating temperature: 0...70°C Access time: 5ns Type of integrated circuit: DRAM memory Clock frequency: 200MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 8Mx8bitx4 Kind of package: in-tray; tube Case: TSOP66 II Kind of memory: DDR1; SDRAM Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
||
| IS43R86400F-5BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape кількість в упаковці: 2500 шт |
товар відсутній |
||
| IS43R86400F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube кількість в упаковці: 108 шт |
товар відсутній |
||
| IS43R86400F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43TR16128C-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128C-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128C-15HBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128C-15HBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128C-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43TR16128C-125KBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43TR16128C-15HBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43TR16128CL-15HBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128CL-15HBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128CL-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43TR16128CL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128CL-125KBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43TR16128CL-15HBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43TR16128CL-15HBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS43TR16128D-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C Mounting: SMD Supply voltage: 1.5V DC Kind of package: in-tray; tube Operating temperature: 0...95°C Kind of interface: parallel Memory organisation: 128Mx16bit Case: TWBGA96 Kind of memory: DDR3; SDRAM Access time: 13.75ns Type of integrated circuit: DRAM memory Clock frequency: 1066MHz Memory capacity: 2Gb кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128D-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C Mounting: SMD Supply voltage: 1.5V DC Kind of package: in-tray; tube Operating temperature: -40...95°C Kind of interface: parallel Memory organisation: 128Mx16bit Case: TWBGA96 Kind of memory: DDR3; SDRAM Access time: 13.75ns Type of integrated circuit: DRAM memory Clock frequency: 1066MHz Memory capacity: 2Gb кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128DL-107MBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96 Operating temperature: 0...95°C Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Mounting: SMD Case: TWBGA96 кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128DL-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C Mounting: SMD Supply voltage: 1.35V DC Kind of package: in-tray; tube Operating temperature: 0...95°C Kind of interface: parallel Memory organisation: 128Mx16bit Case: TWBGA96 Kind of memory: DDR3L; SDRAM Access time: 13.75ns Type of integrated circuit: DRAM memory Clock frequency: 1066MHz Memory capacity: 2Gb кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128DL-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96 Operating temperature: -40...95°C Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Mounting: SMD Case: TWBGA96 кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16128DL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C Mounting: SMD Supply voltage: 1.35V DC Kind of package: in-tray; tube Operating temperature: -40...95°C Kind of interface: parallel Memory organisation: 128Mx16bit Case: TWBGA96 Kind of memory: DDR3L; SDRAM Access time: 13.75ns Type of integrated circuit: DRAM memory Clock frequency: 1066MHz Memory capacity: 2Gb кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16256B-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR3; SDRAM Memory organisation: 256Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: -40...95°C Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16256B-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR3; SDRAM Memory organisation: 256Mx16bit Access time: 13.75ns Clock frequency: 1066MHz Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: 0...95°C Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16256B-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR3; SDRAM Memory organisation: 256Mx16bit Access time: 13.75ns Clock frequency: 1066MHz Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: -40...95°C Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16256BL-107MBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Operating temperature: 0...95°C Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Gb DRAM Mounting: SMD Case: TWBGA96 кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16256BL-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx16bit Access time: 13.75ns Clock frequency: 1066MHz Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: 0...95°C Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16256BL-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Operating temperature: -40...95°C Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Gb DRAM Mounting: SMD Case: TWBGA96 кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16256BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Mounting: SMD Operating temperature: -40...95°C Supply voltage: 1.35V DC Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Gb DRAM Case: TWBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx16bit Access time: 13.75ns Clock frequency: 1066MHz кількість в упаковці: 190 шт |
товар відсутній |
||
| IS43TR16512B-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Memory: 8Gb DRAM Clock frequency: 933MHz Kind of memory: DDR3; SDRAM Supply voltage: 1.5V DC Operating temperature: 0...95°C Kind of interface: parallel Kind of package: in-tray; tube Case: TWBGA96 Access time: 13.75ns Memory organisation: 512Mx16bit Mounting: SMD Type of integrated circuit: DRAM memory кількість в упаковці: 136 шт |
товар відсутній |
||
| IS43TR16512B-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Memory: 8Gb DRAM Clock frequency: 933MHz Kind of memory: DDR3; SDRAM Supply voltage: 1.5V DC Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Case: TWBGA96 Access time: 13.75ns Memory organisation: 512Mx16bit Mounting: SMD Type of integrated circuit: DRAM memory кількість в упаковці: 136 шт |
товар відсутній |
||
| IS43TR16512BL-107MBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96 Kind of package: in-tray; tube Operating temperature: 0...95°C Case: TWBGA96 Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Access time: 13.91ns Clock frequency: 933MHz Kind of interface: parallel Memory: 8Gb DRAM Mounting: SMD кількість в упаковці: 136 шт |
товар відсутній |
||
| IS43TR16512BL-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Kind of package: in-tray; tube Operating temperature: 0...95°C Case: TWBGA96 Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Access time: 13.75ns Clock frequency: 933MHz Kind of interface: parallel Memory: 8Gb DRAM Mounting: SMD кількість в упаковці: 136 шт |
товар відсутній |
||
| IS43TR16512BL-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Access time: 13.91ns Clock frequency: 933MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 8Gb DRAM Operating temperature: -40...95°C Case: TWBGA96 кількість в упаковці: 136 шт |
товар відсутній |
||
| IS43TR16512BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Kind of package: in-tray; tube Operating temperature: -40...95°C Case: TWBGA96 Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Access time: 13.75ns Clock frequency: 933MHz Kind of interface: parallel Memory: 8Gb DRAM Mounting: SMD кількість в упаковці: 136 шт |
товар відсутній |
||
| IS43TR16640C-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 64Mx16bit Clock frequency: 1066MHz Access time: 13.91ns Case: TWBGA96 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR16640C-125JBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96 Operating temperature: 0...95°C Mounting: SMD Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 64Mx16bit Access time: 12.5ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Case: TWBGA96 кількість в упаковці: 190 шт |
товар відсутній |
| IS43R16160F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 1 шт
товар відсутній
| IS43R16320F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43R16320F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43R16320F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43R16320F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 108 шт
товар відсутній
| IS43R16320F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43R16320F-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43R16320F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43R16320F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 2500 шт
товар відсутній
| IS43R16320F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 108 шт
товар відсутній
| IS43R16320F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
кількість в упаковці: 108 шт
товар відсутній
| IS43R16320F-6TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43R16800E-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
товар відсутній
| IS43R16800E-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
товар відсутній
| IS43R16800E-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
товар відсутній
| IS43R16800E-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
товар відсутній
| IS43R16800E-6TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
товар відсутній
| IS43R32160D-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.6VDC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.6VDC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.6V DC
товар відсутній
| IS43R32400E-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
кількість в упаковці: 189 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
кількість в упаковці: 189 шт
товар відсутній
| IS43R32400E-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC
Kind of package: reel; tape
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC
Kind of package: reel; tape
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
кількість в упаковці: 1500 шт
товар відсутній
| IS43R32400E-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; -40÷85°C
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
кількість в упаковці: 189 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; -40÷85°C
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
кількість в упаковці: 189 шт
товар відсутній
| IS43R83200F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II
Supply voltage: 2.5V DC
Operating temperature: 0...70°C
Access time: 5ns
Type of integrated circuit: DRAM memory
Clock frequency: 200MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx8bitx4
Kind of package: in-tray; tube
Case: TSOP66 II
Kind of memory: DDR1; SDRAM
Mounting: SMD
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II
Supply voltage: 2.5V DC
Operating temperature: 0...70°C
Access time: 5ns
Type of integrated circuit: DRAM memory
Clock frequency: 200MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx8bitx4
Kind of package: in-tray; tube
Case: TSOP66 II
Kind of memory: DDR1; SDRAM
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| IS43R86400F-5BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
кількість в упаковці: 2500 шт
товар відсутній
| IS43R86400F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
кількість в упаковці: 108 шт
товар відсутній
| IS43R86400F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
кількість в упаковці: 1500 шт
товар відсутній
| IS43TR16128C-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128C-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128C-15HBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128C-15HBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128C-125KBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43TR16128C-125KBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43TR16128C-15HBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43TR16128CL-15HBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128CL-15HBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128CL-125KBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43TR16128CL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128CL-125KBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43TR16128CL-15HBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43TR16128CL-15HBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS43TR16128D-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C
Mounting: SMD
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C
Mounting: SMD
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128D-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C
Mounting: SMD
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C
Mounting: SMD
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128DL-107MBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Case: TWBGA96
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Case: TWBGA96
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128DL-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C
Mounting: SMD
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C
Mounting: SMD
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128DL-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Case: TWBGA96
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Case: TWBGA96
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16128DL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C
Mounting: SMD
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C
Mounting: SMD
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16256B-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16256B-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16256B-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16256BL-107MBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Mounting: SMD
Case: TWBGA96
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Mounting: SMD
Case: TWBGA96
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16256BL-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16256BL-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Mounting: SMD
Case: TWBGA96
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Mounting: SMD
Case: TWBGA96
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16256BL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Case: TWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Case: TWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
кількість в упаковці: 190 шт
товар відсутній
| IS43TR16512B-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Memory: 8Gb DRAM
Clock frequency: 933MHz
Kind of memory: DDR3; SDRAM
Supply voltage: 1.5V DC
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Case: TWBGA96
Access time: 13.75ns
Memory organisation: 512Mx16bit
Mounting: SMD
Type of integrated circuit: DRAM memory
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Memory: 8Gb DRAM
Clock frequency: 933MHz
Kind of memory: DDR3; SDRAM
Supply voltage: 1.5V DC
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Case: TWBGA96
Access time: 13.75ns
Memory organisation: 512Mx16bit
Mounting: SMD
Type of integrated circuit: DRAM memory
кількість в упаковці: 136 шт
товар відсутній
| IS43TR16512B-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Memory: 8Gb DRAM
Clock frequency: 933MHz
Kind of memory: DDR3; SDRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Case: TWBGA96
Access time: 13.75ns
Memory organisation: 512Mx16bit
Mounting: SMD
Type of integrated circuit: DRAM memory
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Memory: 8Gb DRAM
Clock frequency: 933MHz
Kind of memory: DDR3; SDRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Case: TWBGA96
Access time: 13.75ns
Memory organisation: 512Mx16bit
Mounting: SMD
Type of integrated circuit: DRAM memory
кількість в упаковці: 136 шт
товар відсутній
| IS43TR16512BL-107MBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.91ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.91ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
кількість в упаковці: 136 шт
товар відсутній
| IS43TR16512BL-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
кількість в упаковці: 136 шт
товар відсутній
| IS43TR16512BL-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.91ns
Clock frequency: 933MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.91ns
Clock frequency: 933MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
кількість в упаковці: 136 шт
товар відсутній
| IS43TR16512BL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
кількість в упаковці: 136 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
кількість в упаковці: 136 шт
товар відсутній
| IS43TR16640C-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Clock frequency: 1066MHz
Access time: 13.91ns
Case: TWBGA96
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Clock frequency: 1066MHz
Access time: 13.91ns
Case: TWBGA96
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16640C-125JBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: 0...95°C
Mounting: SMD
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
кількість в упаковці: 190 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: 0...95°C
Mounting: SMD
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
кількість в упаковці: 190 шт
товар відсутній