Технічний опис IS43LR16640A-5BL ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C, Supply voltage: 1.7...1.95V DC, Mounting: SMD, Operating temperature: 0...70°C, Clock frequency: 200MHz, Kind of package: in-tray; tube, Kind of interface: parallel, Memory: 1Gb DRAM, Case: TWBGA60, Type of integrated circuit: DRAM memory, Kind of memory: LPDDR; SDRAM, Memory organisation: 16Mx16bitx4, Access time: 5ns, кількість в упаковці: 300 шт.
Інші пропозиції IS43LR16640A-5BL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43LR16640A-5BL | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: 0...70°C Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Case: TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 16Mx16bitx4 Access time: 5ns кількість в упаковці: 300 шт |
товар відсутній |
||
%20Renders/706;-60TWBGA-1.1-10x8;-;-60.jpg "IS43LR16640A-5BL") |
IS43LR16640A-5BL | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DDR 1GB 200MHZ 60BGA |
товар відсутній |
|
 |
IS43LR16640A-5BL | Виробник : ISSI |
DRAM 1G, 1.8V, Mobile DDR, 64Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS |
товар відсутній |
|
| IS43LR16640A-5BL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: 0...70°C Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Case: TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 16Mx16bitx4 Access time: 5ns |
товар відсутній |