Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136441) > Сторінка 2246 з 2275
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IGP30N65F5XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 55A Power dissipation: 188W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 |
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BSC320N20NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 36A |
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IPA320N20NM3SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 104A Drain-source voltage: 200V Drain current: 19A |
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IPB320N20N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 34A |
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IPI320N20N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3 Case: PG-TO262-3 Mounting: THT On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 34A |
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IPP320N20N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3 Case: PG-TO220-3 Mounting: THT Kind of package: tube On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 34A |
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| DD340N20SHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA Case: BG-PB50SB-1 Semiconductor structure: double series Max. off-state voltage: 2kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Load current: 330A Max. forward impulse current: 10kA Max. forward voltage: 1.31V |
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IPB025N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7 Mounting: SMD Case: PG-TO263-7 Drain-source voltage: 100V Drain current: 180A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 861 шт: термін постачання 21-30 дні (днів) |
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IRF7815TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 5.1A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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| IR38263MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Kind of package: reel; tape Output voltage: 0.5...14V DC Output current: 30A Type of integrated circuit: PMIC Interface: PMBus; PVID Number of channels: 1 Input voltage: 5.3...16V DC Kind of integrated circuit: POL converter Topology: buck Mounting: SMD Operating temperature: -40...125°C Case: PQFN5X7 DC supply current: 50mA Supply voltage: 4.5...5.5V Frequency: 0.15...1.5MHz |
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IPB80N06S2L07ATMA3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 210W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhanced |
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| IPB80N06S405ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 320A Power dissipation: 107W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced |
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IPI80N06S407AKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Pulsed drain current: 320A Power dissipation: 79W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: THT Gate charge: 27nC Kind of channel: enhanced |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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IPP80N06S2H5AKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: THT Gate charge: 116nC Kind of package: tube Kind of channel: enhanced |
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IPP80N06S2L07AKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 210W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| IPB180N06S4H1ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Pulsed drain current: 720A Power dissipation: 250W Case: PG-TO263-7-3 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced |
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| T640N12TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 644A; Igt: 250mA Max. off-state voltage: 1.2kV Load current: 644A Case: BG-T4814K0-1 Max. forward impulse current: 9.4kA Gate current: 250mA Mounting: Press-Pack Max. load current: 1.25kA Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck |
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IRG4PSH71UDPBF | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 99A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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IRL80HS120 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2 Mounting: SMD Case: PQFN2X2 Drain-source voltage: 80V Drain current: 9A On-state resistance: 32mΩ Gate charge: 4.7nC Kind of package: reel Polarisation: unipolar Kind of channel: enhanced Technology: OptiMOS™ 5 Power dissipation: 5.8W Gate-source voltage: ±20V Type of transistor: N-MOSFET |
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IRL100HS121 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2 Case: PQFN2X2 Mounting: SMD On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 5.8W Polarisation: unipolar Kind of package: reel Gate charge: 3.7nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 7.8A |
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IPC50N04S5-5R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
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IPC50N04S5L-5R5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced |
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| IPD50N04S4L08ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Pulsed drain current: 200A Power dissipation: 46W Case: PG-TO252-3-313 Gate-source voltage: -16...20V On-state resistance: 7.3mΩ Mounting: SMD Kind of channel: enhanced |
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| IAUC50N08S5L096ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 13.9mΩ Drain current: 16A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 29nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W |
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| IAUC50N08S5N102ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 15.8mΩ Drain current: 12A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 21nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W |
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| IAUA250N08S5N018AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 2.5mΩ Drain current: 35A Drain-source voltage: 80V Case: PG-HSOF-5 Gate charge: 125nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 813A Power dissipation: 238W |
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IRL520NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 48W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 0.18Ω Mounting: THT Gate charge: 13.3nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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IRFH5250DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5250TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IHW40N135R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3 Case: TO247-3 Mounting: THT Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Kind of package: tube Power dissipation: 197W Gate charge: 305nC Technology: TRENCHSTOP™ RC Collector-emitter voltage: 1.35kV Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Turn-off time: 0.5µs Type of transistor: IGBT |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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IRFP4321PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC Mounting: THT Power dissipation: 310W Polarisation: unipolar Kind of package: tube Gate charge: 71nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247AC Drain-source voltage: 150V Drain current: 78A On-state resistance: 15.5mΩ Type of transistor: N-MOSFET |
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AUIPS6041GTR | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.6A; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.13Ω Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 1.25W Application: automotive industry |
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| 6EDL04I06PTXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6 Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-28 Output current: -0.375...0.24A Number of channels: 6 Supply voltage: 13...17.5V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP |
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6EDL04N02PR | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6 Type of integrated circuit: driver Topology: MOSFET three-phase bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: EiceDRIVER™ Case: TSSOP28 Output current: -0.375...0.24A Number of channels: 6 Supply voltage: 10...17.5V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 200V Protection: anti-overload OPP; undervoltage UVP |
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IM231M6T2BAKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; DIP23; 4A; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Micro; TRENCHSTOP™ 6 Case: DIP23 Output current: 4A Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...17.5/0...400V Frequency: 20kHz Kind of package: tube Voltage class: 600V Power dissipation: 8.7W |
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IM231L6S1BALMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; ClPOS™ Micro,TRENCHSTOP™ Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Micro; TRENCHSTOP™ Case: SOP 29x12 (PG-DIP-23) Output current: 6A Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...450V Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: undervoltage UVP Power dissipation: 10.5W |
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SPD09P06PLGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -9.7A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 2262 шт: термін постачання 21-30 дні (днів) |
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BSO220N03MDGXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8 Mounting: SMD Drain-source voltage: 30V Polarisation: unipolar Power dissipation: 1.56W Drain current: 7.7A Case: PG-DSO-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 22mΩ |
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IPP220N25NFDAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3 Drain-source voltage: 250V Drain current: 61A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ FD Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO220-3 Mounting: THT |
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IRFU220NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 43W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 15nC Kind of channel: enhanced |
на замовлення 162 шт: термін постачання 21-30 дні (днів) |
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| IAUA220N08S5N021AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5 Mounting: SMD Drain-source voltage: 80V Drain current: 27A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 211W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 677A Case: PG-HSOF-5 |
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TD240N36KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 3.6kV; 240A; BG-PB60-1; Ufmax: 3.43V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 3.6kV Load current: 240A Case: BG-PB60-1 Max. forward voltage: 3.43V Max. forward impulse current: 6.1kA Gate current: 250mA Electrical mounting: screw Max. load current: 700A Mechanical mounting: screw |
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TT61N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 60A; BG-PB20-1; Igt: 250mA Max. off-state voltage: 1.6kV Max. forward voltage: 1.9V Load current: 60A Semiconductor structure: double series Gate current: 250mA Max. forward impulse current: 1.55kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB20-1 |
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IRS21844PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -2.3...1.9A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
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| IMW65R107M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247 Case: TO247 Mounting: THT Kind of package: tube Power dissipation: 75W Polarisation: unipolar Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -5...23V Pulsed drain current: 48A Drain-source voltage: 650V Drain current: 13A On-state resistance: 139mΩ Type of transistor: N-MOSFET |
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| IMZA65R107M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W Case: TO247-4 Mounting: THT Kind of package: tube Power dissipation: 75W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -5...23V Pulsed drain current: 48A Drain-source voltage: 650V Drain current: 13A On-state resistance: 139mΩ Type of transistor: N-MOSFET |
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IPB107N20N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain-source voltage: 200V Drain current: 88A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
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IPB107N20NAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain-source voltage: 200V Drain current: 88A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 860 шт: термін постачання 21-30 дні (днів) |
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IRFR3707ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 56A; 50W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 56A Power dissipation: 50W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPB120N06S402ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 150nC Kind of channel: enhanced |
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IPI020N06NAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of channel: enhanced |
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IPP020N06NAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPB010N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7 Technology: OptiMOS™ Mounting: SMD Case: PG-TO263-7 On-state resistance: 1mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 300W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 180A |
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| DEMO SENSE2GOL | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included Type of development kit: demonstration Kit contents: documentation; prototype board; USB A - USB B micro cable Components: BGT24LTR11 Software: included |
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IRF7240TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -10.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BSZ067N06LS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8 Power dissipation: 69W Type of transistor: N-MOSFET Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 20A On-state resistance: 6.7mΩ Case: PG-TSDSON-8 Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Technology: OptiMOS™ 3 |
товар відсутній |
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BCR533E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товар відсутній |
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FP20R06W1E3B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A Technology: EasyPIM™ 1B Collector current: 20A Power dissipation: 94W Case: AG-EASY1B-2 Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Application: frequency changer; Inverter Electrical mounting: Press-in PCB Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT |
товар відсутній |
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FS20R06VE3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A Technology: EasyPACK™ Collector current: 20A Power dissipation: 71.5W Case: AG-EASY750-1 Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: Inverter Electrical mounting: Press-in PCB Topology: IGBT half-bridge x3 Type of module: IGBT |
товар відсутній |
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| FS820R08A6P2LBBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W Max. off-state voltage: 750V Case: AG-HYBRIDD-1 Semiconductor structure: transistor/transistor Mechanical mounting: screw Application: Inverter Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 1.64kA Power dissipation: 714W Electrical mounting: Press-in PCB Technology: HybridPACK™ Topology: IGBT half-bridge x3; NTC thermistor Type of module: IGBT |
товар відсутній |
| IGP30N65F5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 55A
Power dissipation: 188W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 55A
Power dissipation: 188W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
товар відсутній
| BSC320N20NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 36A
товар відсутній
| IPA320N20NM3SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 104A
Drain-source voltage: 200V
Drain current: 19A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 104A
Drain-source voltage: 200V
Drain current: 19A
товар відсутній
| IPB320N20N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
товар відсутній
| IPI320N20N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
товар відсутній
| IPP320N20N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
товар відсутній
| DD340N20SHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Semiconductor structure: double series
Max. off-state voltage: 2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 330A
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Semiconductor structure: double series
Max. off-state voltage: 2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 330A
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
товар відсутній
| IPB025N10N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Mounting: SMD
Case: PG-TO263-7
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Mounting: SMD
Case: PG-TO263-7
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 861 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 355.3 грн |
| 3+ | 296.85 грн |
| 4+ | 228.52 грн |
| 11+ | 216.03 грн |
| IRF7815TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IR38263MTRPBFAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
товар відсутній
| IPB80N06S2L07ATMA3 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| IPB80N06S405ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IPI80N06S407AKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhanced
на замовлення 418 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.71 грн |
| 9+ | 103.6 грн |
| 23+ | 97.73 грн |
| 250+ | 94.79 грн |
| IPP80N06S2H5AKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP80N06S2L07AKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPB180N06S4H1ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| T640N12TOFXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 644A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 644A
Case: BG-T4814K0-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 644A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 644A
Case: BG-T4814K0-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
товар відсутній
| IRG4PSH71UDPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRL80HS120 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Drain-source voltage: 80V
Drain current: 9A
On-state resistance: 32mΩ
Gate charge: 4.7nC
Kind of package: reel
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 5
Power dissipation: 5.8W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Drain-source voltage: 80V
Drain current: 9A
On-state resistance: 32mΩ
Gate charge: 4.7nC
Kind of package: reel
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 5
Power dissipation: 5.8W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
товар відсутній
| IRL100HS121 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.8W
Polarisation: unipolar
Kind of package: reel
Gate charge: 3.7nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 7.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.8W
Polarisation: unipolar
Kind of package: reel
Gate charge: 3.7nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 7.8A
товар відсутній
| IPC50N04S5-5R8 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
товар відсутній
| IPC50N04S5L-5R5 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
товар відсутній
| IPD50N04S4L08ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IAUC50N08S5L096ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 13.9mΩ
Drain current: 16A
Drain-source voltage: 80V
Case: PG-TDSON-8
Gate charge: 29nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 200A
Power dissipation: 60W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 13.9mΩ
Drain current: 16A
Drain-source voltage: 80V
Case: PG-TDSON-8
Gate charge: 29nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 200A
Power dissipation: 60W
товар відсутній
| IAUC50N08S5N102ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 15.8mΩ
Drain current: 12A
Drain-source voltage: 80V
Case: PG-TDSON-8
Gate charge: 21nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 200A
Power dissipation: 60W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 15.8mΩ
Drain current: 12A
Drain-source voltage: 80V
Case: PG-TDSON-8
Gate charge: 21nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 200A
Power dissipation: 60W
товар відсутній
| IAUA250N08S5N018AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 2.5mΩ
Drain current: 35A
Drain-source voltage: 80V
Case: PG-HSOF-5
Gate charge: 125nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 813A
Power dissipation: 238W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 2.5mΩ
Drain current: 35A
Drain-source voltage: 80V
Case: PG-HSOF-5
Gate charge: 125nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 813A
Power dissipation: 238W
товар відсутній
| IRL520NPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 192 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.14 грн |
| 11+ | 35.49 грн |
| 12+ | 32.99 грн |
| 31+ | 27.7 грн |
| 85+ | 26.16 грн |
| IRFH5250DTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5250TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IHW40N135R5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Kind of package: tube
Power dissipation: 197W
Gate charge: 305nC
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 0.5µs
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Kind of package: tube
Power dissipation: 197W
Gate charge: 305nC
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 0.5µs
Type of transistor: IGBT
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 398.82 грн |
| 3+ | 333.59 грн |
| 4+ | 256.44 грн |
| 10+ | 241.74 грн |
| IRFP4321PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Mounting: THT
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 71nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247AC
Drain-source voltage: 150V
Drain current: 78A
On-state resistance: 15.5mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Mounting: THT
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 71nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247AC
Drain-source voltage: 150V
Drain current: 78A
On-state resistance: 15.5mΩ
Type of transistor: N-MOSFET
товар відсутній
| AUIPS6041GTR |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.6A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.13Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.6A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.13Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
товар відсутній
| 6EDL04I06PTXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 13...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 13...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
товар відсутній
| 6EDL04N02PR |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 10...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 10...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
товар відсутній
| IM231M6T2BAKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP23; 4A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro; TRENCHSTOP™ 6
Case: DIP23
Output current: 4A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...17.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Power dissipation: 8.7W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP23; 4A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro; TRENCHSTOP™ 6
Case: DIP23
Output current: 4A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...17.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Power dissipation: 8.7W
товар відсутній
| IM231L6S1BALMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Micro,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro; TRENCHSTOP™
Case: SOP 29x12 (PG-DIP-23)
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 10.5W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Micro,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro; TRENCHSTOP™
Case: SOP 29x12 (PG-DIP-23)
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 10.5W
товар відсутній
| SPD09P06PLGBTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 2262 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.33 грн |
| 7+ | 55.84 грн |
| 22+ | 36.74 грн |
| 60+ | 34.53 грн |
| BSO220N03MDGXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Drain-source voltage: 30V
Polarisation: unipolar
Power dissipation: 1.56W
Drain current: 7.7A
Case: PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Drain-source voltage: 30V
Polarisation: unipolar
Power dissipation: 1.56W
Drain current: 7.7A
Case: PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 22mΩ
товар відсутній
| IPP220N25NFDAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Drain-source voltage: 250V
Drain current: 61A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ FD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Drain-source voltage: 250V
Drain current: 61A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ FD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Mounting: THT
товар відсутній
| IRFU220NPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
на замовлення 162 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.97 грн |
| 30+ | 29.32 грн |
| 81+ | 27.7 грн |
| IAUA220N08S5N021AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5
Mounting: SMD
Drain-source voltage: 80V
Drain current: 27A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 211W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 677A
Case: PG-HSOF-5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5
Mounting: SMD
Drain-source voltage: 80V
Drain current: 27A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 211W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 677A
Case: PG-HSOF-5
товар відсутній
| TD240N36KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 3.6kV; 240A; BG-PB60-1; Ufmax: 3.43V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB60-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 700A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 3.6kV; 240A; BG-PB60-1; Ufmax: 3.43V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB60-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 700A
Mechanical mounting: screw
товар відсутній
| TT61N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; BG-PB20-1; Igt: 250mA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.9V
Load current: 60A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 1.55kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB20-1
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; BG-PB20-1; Igt: 250mA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.9V
Load current: 60A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 1.55kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB20-1
товар відсутній
| IRS21844PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
товар відсутній
| IMW65R107M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 75W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 139mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 75W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 139mΩ
Type of transistor: N-MOSFET
товар відсутній
| IMZA65R107M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 75W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 139mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 75W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 139mΩ
Type of transistor: N-MOSFET
товар відсутній
| IPB107N20N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPB107N20NAATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 710.59 грн |
| 2+ | 454.1 грн |
| 6+ | 429.11 грн |
| IRFR3707ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB120N06S402ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhanced
товар відсутній
| IPI020N06NAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP020N06NAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPB010N06NATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Technology: OptiMOS™
Mounting: SMD
Case: PG-TO263-7
On-state resistance: 1mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 300W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 180A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Technology: OptiMOS™
Mounting: SMD
Case: PG-TO263-7
On-state resistance: 1mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 300W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 180A
товар відсутній
| DEMO SENSE2GOL |
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
товар відсутній
| IRF7240TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BSZ067N06LS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Power dissipation: 69W
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 6.7mΩ
Case: PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Power dissipation: 69W
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 6.7mΩ
Case: PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 3
товар відсутній
| BCR533E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| FP20R06W1E3B11BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Technology: EasyPIM™ 1B
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Technology: EasyPIM™ 1B
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| FS20R06VE3 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A
Technology: EasyPACK™
Collector current: 20A
Power dissipation: 71.5W
Case: AG-EASY750-1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT half-bridge x3
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A
Technology: EasyPACK™
Collector current: 20A
Power dissipation: 71.5W
Case: AG-EASY750-1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT half-bridge x3
Type of module: IGBT
товар відсутній
| FS820R08A6P2LBBPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W
Max. off-state voltage: 750V
Case: AG-HYBRIDD-1
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Application: Inverter
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.64kA
Power dissipation: 714W
Electrical mounting: Press-in PCB
Technology: HybridPACK™
Topology: IGBT half-bridge x3; NTC thermistor
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W
Max. off-state voltage: 750V
Case: AG-HYBRIDD-1
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Application: Inverter
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.64kA
Power dissipation: 714W
Electrical mounting: Press-in PCB
Technology: HybridPACK™
Topology: IGBT half-bridge x3; NTC thermistor
Type of module: IGBT
товар відсутній