IPB120N06S402ATMA2 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 114.18 грн |
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Технічний опис IPB120N06S402ATMA2 Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPB120N06S402ATMA2 за ціною від 105.1 грн до 237.01 грн
| Фото | Назва | Виробник | Інформація |
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IPB120N06S402ATMA2 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2719 шт: термін постачання 21-31 дні (днів) |
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IPB120N06S402ATMA2 | Виробник : Infineon Technologies |
MOSFETs N-Ch 60V 120A D2PAK-2 |
на замовлення 1626 шт: термін постачання 21-30 дні (днів) |
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IPB120N06S402ATMA2 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IPB120N06S402ATMA2 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPB120N06S402ATMA2 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 150nC Kind of channel: enhanced |
товар відсутній |