IRL100HS121 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
Description: MOSFET N-CH 100V 11A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
на замовлення 3421 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 78.59 грн |
10+ | 62.02 грн |
100+ | 48.22 грн |
500+ | 38.36 грн |
1000+ | 31.25 грн |
2000+ | 29.42 грн |
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Технічний опис IRL100HS121 Infineon Technologies
Description: MOSFET N-CH 100V 11A 6PQFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V, Power Dissipation (Max): 11.5W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 10µA, Supplier Device Package: 6-PQFN (2x2) (DFN2020), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V.
Інші пропозиції IRL100HS121 за ціною від 33.08 грн до 91.35 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IRL100HS121 | Виробник : Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS |
на замовлення 4000 шт: термін постачання 555-564 дні (днів) |
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IRL100HS121 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2 Case: PQFN2X2 Mounting: SMD On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 5.8W Polarisation: unipolar Kind of package: reel Gate charge: 3.7nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 7.8A кількість в упаковці: 1 шт |
товар відсутній |
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IRL100HS121 | Виробник : Infineon Technologies | Trans MOSFET N-CH Si 100V 5.1A 6-Pin PQFN EP T/R |
товар відсутній |
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IRL100HS121 | Виробник : Infineon Technologies | Trans MOSFET N-CH Si 100V 5.1A 6-Pin PQFN EP T/R |
товар відсутній |
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IRL100HS121 | Виробник : Infineon Technologies | Trans MOSFET N-CH Si 100V 5.1A 6-Pin PQFN EP T/R |
товар відсутній |
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IRL100HS121 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 11A 6PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V Power Dissipation (Max): 11.5W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 10µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V |
товар відсутній |
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IRL100HS121 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2 Case: PQFN2X2 Mounting: SMD On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 5.8W Polarisation: unipolar Kind of package: reel Gate charge: 3.7nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 7.8A |
товар відсутній |