RQ1A070APTR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET P-CH 12V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.96 грн |
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Технічний опис RQ1A070APTR Rohm Semiconductor
Description: MOSFET P-CH 12V 7A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V, Power Dissipation (Max): 550mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V.
Інші пропозиції RQ1A070APTR за ціною від 19.85 грн до 64.79 грн
| Фото | Назва | Виробник | Інформація |
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RQ1A070APTR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 12V 7A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V Power Dissipation (Max): 550mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 6 V |
на замовлення 3473 шт: термін постачання 21-31 дні (днів) |
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RQ1A070APTR | Виробник : ROHM Semiconductor |
MOSFET Trans MOSFET P-CH 12V 7A |
на замовлення 3681 шт: термін постачання 21-30 дні (днів) |
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| RQ1A070APTR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 48mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RQ1A070APTR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 48mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |