Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99813) > Сторінка 1462 з 1664
| Фото | Назва | Виробник | Інформація |
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| QS6K21TR | ROHM SEMICONDUCTOR |
 QS6K21TR Multi channel transistors |
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| QS6M4TR | ROHM SEMICONDUCTOR |
QS6M4TR Multi channel transistors |
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| QS6U22TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QS6U24TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -1A Pulsed drain current: -2A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QS8J13TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 58mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS8J2TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -4A Pulsed drain current: -12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 132mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS8J4TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Pulsed drain current: -16A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS8J5TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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| QS8K11TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS8K13TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 18A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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QS8M31TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/-2A; Idm: 4÷6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 3/-2A Pulsed drain current: 4...6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 137/266mΩ Mounting: SMD Gate charge: 4/7.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 988 шт: термін постачання 14-21 дні (днів) |
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| QS8M51FRATR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
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| QS8M51TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
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QSH29TR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 60V; 0.5A; 1.25W; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 1.25W Case: SC74; SOT457 Current gain: 500 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ кількість в упаковці: 1 шт |
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QST8TR | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 1.5A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz кількість в упаковці: 1 шт |
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QST9TR | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz кількість в упаковці: 1 шт |
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QSX8TR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 30V; 1A; 500mW; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz кількість в упаковці: 1 шт |
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| QSZ2TR | ROHM SEMICONDUCTOR |
QSZ2TR Complementary transistors |
на замовлення 2942 шт: термін постачання 14-21 дні (днів) |
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| R6002END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.7A; Idm: 4A; 26W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.7A Pulsed drain current: 4A Power dissipation: 26W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| R6003KND3TL1 | ROHM SEMICONDUCTOR |
R6003KND3TL1 SMD N channel transistors |
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| R6004END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 8A Power dissipation: 59W Case: TO252 Gate-source voltage: ±20V On-state resistance: 1.36Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| R6004JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 12A Power dissipation: 60W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.43Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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| R6006JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 86W Drain-source voltage: 600V Drain current: 6A On-state resistance: 936mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 18A кількість в упаковці: 2500 шт |
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| R6006KND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 70W Drain-source voltage: 600V Drain current: 6A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A кількість в упаковці: 2500 шт |
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| R6007END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 14A Power dissipation: 78W Gate charge: 20nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO252 On-state resistance: 1.2Ω кількість в упаковці: 2500 шт |
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| R6007ENJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 14A Power dissipation: 78W Gate charge: 20nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: D2PAK On-state resistance: 1.2Ω кількість в упаковці: 1 шт |
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| R6007JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252 Type of transistor: N-MOSFET Mounting: SMD Case: TO252 On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A кількість в упаковці: 2500 шт |
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| R6007JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK Type of transistor: N-MOSFET Mounting: SMD Case: D2PAK On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A кількість в упаковці: 1 шт |
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| R6009END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252 Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A Mounting: SMD Case: TO252 кількість в упаковці: 2500 шт |
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| R6009JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252 Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 585mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 27A Mounting: SMD Case: TO252 кількість в упаковці: 2500 шт |
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| R6009JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 585mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 27A Mounting: SMD Case: D2PAK кількість в упаковці: 1 шт |
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| R6009KNJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 27A Mounting: SMD Case: D2PAK кількість в упаковці: 1 шт |
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| R6011END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252 Mounting: SMD Pulsed drain current: 22A Power dissipation: 124W Gate charge: 32nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 720mΩ кількість в упаковці: 2500 шт |
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| R6011KND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 124W; TO252 Mounting: SMD Pulsed drain current: 33A Power dissipation: 124W Gate charge: 22nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 720mΩ кількість в упаковці: 2500 шт |
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| R6011KNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP Power dissipation: 53W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 33A Mounting: THT Case: TO220FP Drain-source voltage: 600V Drain current: 11A On-state resistance: 720mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| R6012JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 160W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 36A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
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| R6012JNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 60W; TO220FP Power dissipation: 60W Polarisation: unipolar Kind of package: tube Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 36A Mounting: THT Case: TO220FP Drain-source voltage: 600V Drain current: 12A On-state resistance: 390mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| R6015ENXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 30A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.56Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| R6020ENJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 231W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 231W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
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| R6020ENXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| R6020JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 252W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 252W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 234mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
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| R6020PNJFRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 304W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 80A Power dissipation: 304W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
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| R6024ENJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 72A Power dissipation: 245W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
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| R6024ENXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 74W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 72A Power dissipation: 74W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| R6024KNJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 72A Power dissipation: 245W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
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| R6024KNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 72A Power dissipation: 245W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| R6025JNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 75A; 85W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 75A Power dissipation: 85W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| R6030JNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 95W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Power dissipation: 95W Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 143mΩ Gate-source voltage: ±30V Pulsed drain current: 90A Gate charge: 74nC кількість в упаковці: 1 шт |
товар відсутній |
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| R6030JNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247 Mounting: THT Kind of package: tube Case: TO247 Power dissipation: 370W Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 143mΩ Gate-source voltage: ±30V Pulsed drain current: 90A Gate charge: 74nC кількість в упаковці: 1 шт |
товар відсутній |
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| R6030KNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 305W; TO247 Mounting: THT Kind of package: tube Case: TO247 Power dissipation: 305W Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 240mΩ Gate-source voltage: ±20V Pulsed drain current: 90A Gate charge: 56nC кількість в упаковці: 1 шт |
товар відсутній |
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| R6035KNZ4C13 | ROHM SEMICONDUCTOR |
R6035KNZ4C13 THT N channel transistors |
товар відсутній |
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| R6042JNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 42A; Idm: 126A; 495W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Pulsed drain current: 126A Power dissipation: 495W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.104Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| R6076ENZ4C13 | ROHM SEMICONDUCTOR |
R6076ENZ4C13 THT N channel transistors |
товар відсутній |
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| R6076KNZ4C13 | ROHM SEMICONDUCTOR |
R6076KNZ4C13 THT N channel transistors |
товар відсутній |
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| R6504END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 58W Gate charge: 15nC Polarisation: unipolar Drain current: 4A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.02Ω кількість в упаковці: 2500 шт |
товар відсутній |
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| R6504KNJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 58W Gate charge: 10nC Polarisation: unipolar Drain current: 4A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 1.05Ω кількість в упаковці: 1 шт |
товар відсутній |
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| R6509KNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP Mounting: THT Drain-source voltage: 650V Drain current: 9A On-state resistance: 1.1Ω Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Kind of package: tube Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 27A Case: TO220FP кількість в упаковці: 1 шт |
товар відсутній |
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| R6515ENXC7G | ROHM SEMICONDUCTOR |
R6515ENXC7G THT N channel transistors |
товар відсутній |
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| R6520ENXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 60A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| R6520KNX3C16 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 220W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 60A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
| QS6U22TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QS6U24TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1A
Pulsed drain current: -2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1A
Pulsed drain current: -2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QS8J13TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS8J2TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Pulsed drain current: -12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Pulsed drain current: -12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS8J4TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS8J5TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
| QS8K11TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS8K13TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS8M31TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/-2A; Idm: 4÷6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3/-2A
Pulsed drain current: 4...6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 137/266mΩ
Mounting: SMD
Gate charge: 4/7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/-2A; Idm: 4÷6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3/-2A
Pulsed drain current: 4...6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 137/266mΩ
Mounting: SMD
Gate charge: 4/7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 988 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.45 грн |
| 43+ | 25.09 грн |
| 116+ | 22.84 грн |
| 3000+ | 22.49 грн |
| QS8M51FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| QS8M51TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| QSH29TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 60V; 0.5A; 1.25W; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC74; SOT457
Current gain: 500
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 60V; 0.5A; 1.25W; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC74; SOT457
Current gain: 500
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
кількість в упаковці: 1 шт
товар відсутній
| QST8TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
кількість в упаковці: 1 шт
товар відсутній
| QST9TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
кількість в упаковці: 1 шт
товар відсутній
| QSX8TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
кількість в упаковці: 1 шт
товар відсутній
| QSZ2TR |
|
Виробник: ROHM SEMICONDUCTOR
QSZ2TR Complementary transistors
QSZ2TR Complementary transistors
на замовлення 2942 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 25.07 грн |
| 86+ | 11.99 грн |
| 235+ | 11.33 грн |
| R6002END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.7A; Idm: 4A; 26W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.7A
Pulsed drain current: 4A
Power dissipation: 26W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.7A; Idm: 4A; 26W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.7A
Pulsed drain current: 4A
Power dissipation: 26W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6004END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.36Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.36Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6004JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| R6006JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 86W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 936mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 18A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 86W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 936mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 18A
кількість в упаковці: 2500 шт
товар відсутній
| R6006KND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 70W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 70W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
кількість в упаковці: 2500 шт
товар відсутній
| R6007END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO252
On-state resistance: 1.2Ω
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO252
On-state resistance: 1.2Ω
кількість в упаковці: 2500 шт
товар відсутній
| R6007ENJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK
On-state resistance: 1.2Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK
On-state resistance: 1.2Ω
кількість в упаковці: 1 шт
товар відсутній
| R6007JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
кількість в упаковці: 2500 шт
товар відсутній
| R6007JNJGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D2PAK
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D2PAK
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
кількість в упаковці: 1 шт
товар відсутній
| R6009END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Mounting: SMD
Case: TO252
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Mounting: SMD
Case: TO252
кількість в упаковці: 2500 шт
товар відсутній
| R6009JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: TO252
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: TO252
кількість в упаковці: 2500 шт
товар відсутній
| R6009JNJGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
товар відсутній
| R6009KNJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
товар відсутній
| R6011END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 124W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 124W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
кількість в упаковці: 2500 шт
товар відсутній
| R6011KND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 124W; TO252
Mounting: SMD
Pulsed drain current: 33A
Power dissipation: 124W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 124W; TO252
Mounting: SMD
Pulsed drain current: 33A
Power dissipation: 124W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
кількість в упаковці: 2500 шт
товар відсутній
| R6011KNXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 33A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 720mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 33A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 720mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| R6012JNJGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| R6012JNXC7G |
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 60W; TO220FP
Power dissipation: 60W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 36A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 60W; TO220FP
Power dissipation: 60W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 36A
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| R6015ENXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6020ENJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 231W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 231W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 231W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 231W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
| R6020ENXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6020JNJGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 252W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 252W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 234mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 252W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 252W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 234mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
| R6020PNJFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 304W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 304W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 304W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 304W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
| R6024ENJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
| R6024ENXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 74W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 74W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 74W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 74W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6024KNJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
| R6024KNZ4C13 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 245W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6025JNXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 75A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 75A
Power dissipation: 85W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 75A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 75A
Power dissipation: 85W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6030JNXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 95W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Power dissipation: 95W
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 143mΩ
Gate-source voltage: ±30V
Pulsed drain current: 90A
Gate charge: 74nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 95W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Power dissipation: 95W
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 143mΩ
Gate-source voltage: ±30V
Pulsed drain current: 90A
Gate charge: 74nC
кількість в упаковці: 1 шт
товар відсутній
| R6030JNZ4C13 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Power dissipation: 370W
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 143mΩ
Gate-source voltage: ±30V
Pulsed drain current: 90A
Gate charge: 74nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Power dissipation: 370W
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 143mΩ
Gate-source voltage: ±30V
Pulsed drain current: 90A
Gate charge: 74nC
кількість в упаковці: 1 шт
товар відсутній
| R6030KNZ4C13 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 305W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Power dissipation: 305W
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 240mΩ
Gate-source voltage: ±20V
Pulsed drain current: 90A
Gate charge: 56nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 305W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Power dissipation: 305W
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 240mΩ
Gate-source voltage: ±20V
Pulsed drain current: 90A
Gate charge: 56nC
кількість в упаковці: 1 шт
товар відсутній
| R6042JNZ4C13 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; Idm: 126A; 495W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Pulsed drain current: 126A
Power dissipation: 495W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; Idm: 126A; 495W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Pulsed drain current: 126A
Power dissipation: 495W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6504END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 58W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.02Ω
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 58W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.02Ω
кількість в упаковці: 2500 шт
товар відсутній
| R6504KNJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 58W
Gate charge: 10nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.05Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 12A; 58W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 58W
Gate charge: 10nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.05Ω
кількість в упаковці: 1 шт
товар відсутній
| R6509KNXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP
Mounting: THT
Drain-source voltage: 650V
Drain current: 9A
On-state resistance: 1.1Ω
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: TO220FP
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP
Mounting: THT
Drain-source voltage: 650V
Drain current: 9A
On-state resistance: 1.1Ω
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній
| R6520ENXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6520KNX3C16 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній