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R6011END3TL1 ROHM Semiconductor
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MOSFET Nch 600V 11A Power MOSFET. Power MOSFET R6011END3 is suitable for switching power supply.
на замовлення 2378 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 223.84 грн |
10+ | 184.14 грн |
100+ | 126.97 грн |
250+ | 117.09 грн |
500+ | 107.22 грн |
1000+ | 91 грн |
2500+ | 86.76 грн |
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Технічний опис R6011END3TL1 ROHM Semiconductor
Description: MOSFET N-CH 600V 11A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Power Dissipation (Max): 124W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Інші пропозиції R6011END3TL1 за ціною від 161.54 грн до 231.97 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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R6011END3TL1 | Виробник : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 371 шт: термін постачання 21-31 дні (днів) |
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R6011END3TL1 | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252 Mounting: SMD Pulsed drain current: 22A Power dissipation: 124W Gate charge: 32nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 720mΩ кількість в упаковці: 2500 шт |
товар відсутній |
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![]() |
R6011END3TL1 | Виробник : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
товар відсутній |
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R6011END3TL1 | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252 Mounting: SMD Pulsed drain current: 22A Power dissipation: 124W Gate charge: 32nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 720mΩ |
товар відсутній |