Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100323) > Сторінка 1461 з 1673
| Фото | Назва | Виробник | Інформація |
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| KDZVTR47A | ROHM SEMICONDUCTOR | KDZVTR47A SMD Zener diodes |
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KDZVTR5.1B | ROHM SEMICONDUCTOR |
 Category: SMD Zener diodesDescription: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 1 шт |
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KDZVTR5.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 1 шт |
на замовлення 2846 шт: термін постачання 14-21 дні (днів) |
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KDZVTR6.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.2V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 5 шт |
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KDZVTR6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 5 шт |
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| KDZVTR7.5B | ROHM SEMICONDUCTOR |
KDZVTR7.5B SMD Zener diodes |
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KDZVTR8.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 1 шт |
на замовлення 2981 шт: термін постачання 14-21 дні (днів) |
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KDZVTR9.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 9.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 1 шт |
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MMBZ16VALFHT116 | ROHM SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23 Case: SOT23 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Type of diode: TVS array Peak pulse power dissipation: 40W Max. off-state voltage: 13V Semiconductor structure: common anode; double Max. forward impulse current: 1.7A Breakdown voltage: 16V кількість в упаковці: 1 шт |
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MSL0104RGBU1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 2709; RGB; 6.9x2.2x2.15mm; 2.1/3.3/3.2V; 20mA; Front: flat Type of diode: LED Mounting: SMD Case: 2709 LED colour: RGB Dimensions: 6.9x2.2x2.15mm LED current: 20mA Wavelength: 465...475nm; 520...535nm; 619...629nm LED version: angular; tricolour Luminosity of red colour: 450...700mcd Luminosity of blue colour: 220...400mcd Luminosity of green colour: 710...1200mcd Front: flat Operating voltage: 2.1/3.3/3.2V кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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| PDZVTFTR13B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 13V; SMD; reel,tape; SOD128; single diode; 10uA Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Leakage current: 10µA Power dissipation: 1W Zener voltage: 13V кількість в упаковці: 5 шт |
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| PDZVTFTR15B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 15V; SMD; reel,tape; SOD128; single diode; 10uA Mounting: SMD Power dissipation: 1W Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 10µA Case: SOD128 Zener voltage: 15V Type of diode: Zener кількість в упаковці: 5 шт |
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| PDZVTFTR27B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD128; single diode; 10uA Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Leakage current: 10µA кількість в упаковці: 1 шт |
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| PDZVTFTR3.0B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3V; SMD; reel,tape; SOD128; single diode; 100uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 0.1mA кількість в упаковці: 1 шт |
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| PDZVTFTR3.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD128; single diode; 80uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Leakage current: 80µA кількість в упаковці: 1 шт |
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| PDZVTFTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 60µA кількість в упаковці: 1 шт |
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| PDZVTFTR5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 1 шт |
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| PDZVTFTR5.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 1 шт |
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| PDZVTR13B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 13V; SMD; reel,tape; SOD128; single diode; 10uA Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Leakage current: 10µA Power dissipation: 1W Zener voltage: 13V кількість в упаковці: 5 шт |
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| PDZVTR15B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 15V; SMD; reel,tape; SOD128; single diode; 10uA Mounting: SMD Power dissipation: 1W Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 10µA Case: SOD128 Zener voltage: 15V Type of diode: Zener кількість в упаковці: 5 шт |
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| PDZVTR16B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 16V; SMD; reel,tape; SOD128; single diode; 10uA Mounting: SMD Power dissipation: 1W Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 10µA Case: SOD128 Zener voltage: 16V Type of diode: Zener кількість в упаковці: 5 шт |
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| PDZVTR18B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD128; single diode; 10uA Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Leakage current: 10µA кількість в упаковці: 5 шт |
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| PDZVTR24B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SOD128; single diode; 10uA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 10µA кількість в упаковці: 5 шт |
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| PDZVTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 60µA кількість в упаковці: 1 шт |
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| PDZVTR3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA Mounting: SMD Power dissipation: 1W Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 40µA Case: SOD128 Zener voltage: 3.9V Type of diode: Zener кількість в упаковці: 5 шт |
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| PDZVTR5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 1 шт |
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| PDZVTR5.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 1 шт |
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| PDZVTR6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 5 шт |
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| PDZVTR8.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 8.2V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Leakage current: 20µA кількість в упаковці: 1 шт |
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PTZTFTE2518B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; reel,tape; DO214AC,SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode Leakage current: 10µA кількість в упаковці: 5 шт |
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| QDZT18R5.6 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; DSN1006-2,SOD882; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Kind of package: reel; tape Case: DSN1006-2; SOD882 Mounting: SMD Semiconductor structure: single diode Leakage current: 0.5µA кількість в упаковці: 1 шт |
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| QH8JA1TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -18A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 77mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8JB5TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -40V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 17.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8JC5TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.5A; Idm: -14A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 101mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8K26TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7A; Idm: 18A; 2.6W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7A Pulsed drain current: 18A Power dissipation: 2.6W Case: TSMT8 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QH8KA2TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.5A; Idm: 12A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8KA4TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 9A; Idm: 40A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 40A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QH8M22TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/2A; Idm: 18A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 4.5/2A Pulsed drain current: 18A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 59/260mΩ Mounting: SMD Gate charge: 2.6/9.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8MA2TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.5/3A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 56/115mΩ Mounting: SMD Gate charge: 7.8/8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8MA3TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/5.5A; Idm: 18A; 2.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/5.5A Pulsed drain current: 18A Power dissipation: 2.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 46/72mΩ Mounting: SMD Gate charge: 7.2/10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8MA4TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 9/8A Pulsed drain current: 18A Power dissipation: 2.6W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 23.7/40.3mΩ Mounting: SMD Gate charge: 15.5/19.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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QS5K2TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25 Mounting: SMD Case: TSOT25 Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 2A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: reel; tape Semiconductor structure: common source On-state resistance: 154mΩ Pulsed drain current: 8A Power dissipation: 1.25W Gate charge: 2.8nC кількість в упаковці: 1 шт |
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QS5U12TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U13TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U16TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 2A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U17TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U21TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U23TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U26TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U27TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Power dissipation: 1.25W Mounting: SMD Kind of package: reel; tape Case: TSOT25 Features of semiconductor devices: ESD protected gate Polarisation: unipolar Gate charge: 4.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -6A Drain-source voltage: -20V Drain current: -1.5A On-state resistance: 0.34Ω Type of transistor: P-MOSFET + Schottky кількість в упаковці: 1 шт |
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QS5U28TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 245mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U33TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±20V On-state resistance: 0.225Ω Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U34TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Pulsed drain current: 3A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±10V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 400mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS6J1TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 430mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS6K1FRATR | ROHM SEMICONDUCTOR |
QS6K1FRATR Multi channel transistors |
товар відсутній |
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| QS6K1TR | ROHM SEMICONDUCTOR |
QS6K1TR Multi channel transistors |
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| QS6K21FRATR | ROHM SEMICONDUCTOR |
QS6K21FRATR Multi channel transistors |
товар відсутній |
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| QS6K21TR | ROHM SEMICONDUCTOR |
QS6K21TR Multi channel transistors |
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| QS6M4TR | ROHM SEMICONDUCTOR |
QS6M4TR Multi channel transistors |
товар відсутній |
| KDZVTR5.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
товар відсутній
| KDZVTR5.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
на замовлення 2846 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.05 грн |
| 16+ | 17.55 грн |
| 50+ | 12.32 грн |
| 100+ | 10.79 грн |
| 136+ | 7.82 грн |
| 372+ | 7.37 грн |
| 3000+ | 7.1 грн |
| KDZVTR6.2B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 5 шт
товар відсутній
| KDZVTR6.8B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 5 шт
товар відсутній
| KDZVTR8.2B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
на замовлення 2981 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.52 грн |
| 29+ | 9.8 грн |
| 100+ | 8.36 грн |
| 136+ | 7.73 грн |
| 374+ | 7.28 грн |
| 3000+ | 7.1 грн |
| KDZVTR9.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
товар відсутній
| MMBZ16VALFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
кількість в упаковці: 1 шт
товар відсутній
| MSL0104RGBU1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 2709; RGB; 6.9x2.2x2.15mm; 2.1/3.3/3.2V; 20mA; Front: flat
Type of diode: LED
Mounting: SMD
Case: 2709
LED colour: RGB
Dimensions: 6.9x2.2x2.15mm
LED current: 20mA
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: angular; tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
Front: flat
Operating voltage: 2.1/3.3/3.2V
кількість в упаковці: 1 шт
Category: SMD colour LEDs
Description: LED; SMD; 2709; RGB; 6.9x2.2x2.15mm; 2.1/3.3/3.2V; 20mA; Front: flat
Type of diode: LED
Mounting: SMD
Case: 2709
LED colour: RGB
Dimensions: 6.9x2.2x2.15mm
LED current: 20mA
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: angular; tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
Front: flat
Operating voltage: 2.1/3.3/3.2V
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 97.8 грн |
| 5+ | 66.3 грн |
| 24+ | 44.24 грн |
| 66+ | 41.81 грн |
| PDZVTFTR13B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 13V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 1W
Zener voltage: 13V
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 13V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 1W
Zener voltage: 13V
кількість в упаковці: 5 шт
товар відсутній
| PDZVTFTR15B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; SOD128; single diode; 10uA
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Case: SOD128
Zener voltage: 15V
Type of diode: Zener
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; SOD128; single diode; 10uA
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Case: SOD128
Zener voltage: 15V
Type of diode: Zener
кількість в упаковці: 5 шт
товар відсутній
| PDZVTFTR27B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
| PDZVTFTR3.0B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3V; SMD; reel,tape; SOD128; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3V; SMD; reel,tape; SOD128; single diode; 100uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
| PDZVTFTR3.3B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD128; single diode; 80uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 80µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD128; single diode; 80uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 80µA
кількість в упаковці: 1 шт
товар відсутній
| PDZVTFTR3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
кількість в упаковці: 1 шт
товар відсутній
| PDZVTFTR5.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
товар відсутній
| PDZVTFTR5.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
товар відсутній
| PDZVTR13B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 13V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 1W
Zener voltage: 13V
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 13V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 1W
Zener voltage: 13V
кількість в упаковці: 5 шт
товар відсутній
| PDZVTR15B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; SOD128; single diode; 10uA
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Case: SOD128
Zener voltage: 15V
Type of diode: Zener
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; SOD128; single diode; 10uA
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Case: SOD128
Zener voltage: 15V
Type of diode: Zener
кількість в упаковці: 5 шт
товар відсутній
| PDZVTR16B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; reel,tape; SOD128; single diode; 10uA
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Case: SOD128
Zener voltage: 16V
Type of diode: Zener
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; reel,tape; SOD128; single diode; 10uA
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 10µA
Case: SOD128
Zener voltage: 16V
Type of diode: Zener
кількість в упаковці: 5 шт
товар відсутній
| PDZVTR18B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 5 шт
товар відсутній
| PDZVTR24B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SOD128; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 5 шт
товар відсутній
| PDZVTR3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode; 60uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 60µA
кількість в упаковці: 1 шт
товар відсутній
| PDZVTR3.9B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SOD128
Zener voltage: 3.9V
Type of diode: Zener
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA
Mounting: SMD
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SOD128
Zener voltage: 3.9V
Type of diode: Zener
кількість в упаковці: 5 шт
товар відсутній
| PDZVTR5.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
товар відсутній
| PDZVTR5.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
товар відсутній
| PDZVTR6.8B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 5 шт
товар відсутній
| PDZVTR8.2B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 20µA
кількість в упаковці: 1 шт
товар відсутній
| PTZTFTE2518B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 5 шт
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 10µA
кількість в упаковці: 5 шт
товар відсутній
| QDZT18R5.6 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; DSN1006-2,SOD882; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: DSN1006-2; SOD882
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; DSN1006-2,SOD882; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: DSN1006-2; SOD882
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
кількість в упаковці: 1 шт
товар відсутній
| QH8JA1TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -18A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -18A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8JB5TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 17.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 17.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8JC5TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.5A; Idm: -14A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 101mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.5A; Idm: -14A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 101mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8K26TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7A; Idm: 18A; 2.6W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7A; Idm: 18A; 2.6W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QH8KA2TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8KA4TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9A; Idm: 40A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9A; Idm: 40A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QH8M22TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/2A; Idm: 18A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 4.5/2A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 59/260mΩ
Mounting: SMD
Gate charge: 2.6/9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/2A; Idm: 18A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 4.5/2A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 59/260mΩ
Mounting: SMD
Gate charge: 2.6/9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8MA2TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.5/3A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56/115mΩ
Mounting: SMD
Gate charge: 7.8/8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.5/3A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56/115mΩ
Mounting: SMD
Gate charge: 7.8/8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8MA3TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/5.5A; Idm: 18A; 2.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/5.5A
Pulsed drain current: 18A
Power dissipation: 2.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 46/72mΩ
Mounting: SMD
Gate charge: 7.2/10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/5.5A; Idm: 18A; 2.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/5.5A
Pulsed drain current: 18A
Power dissipation: 2.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 46/72mΩ
Mounting: SMD
Gate charge: 7.2/10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8MA4TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/8A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 23.7/40.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/8A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 23.7/40.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QS5K2TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Case: TSOT25
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common source
On-state resistance: 154mΩ
Pulsed drain current: 8A
Power dissipation: 1.25W
Gate charge: 2.8nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Case: TSOT25
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common source
On-state resistance: 154mΩ
Pulsed drain current: 8A
Power dissipation: 1.25W
Gate charge: 2.8nC
кількість в упаковці: 1 шт
товар відсутній
| QS5U12TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U13TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U16TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U17TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U21TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U23TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U26TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U27TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Power dissipation: 1.25W
Mounting: SMD
Kind of package: reel; tape
Case: TSOT25
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Gate charge: 4.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.34Ω
Type of transistor: P-MOSFET + Schottky
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Power dissipation: 1.25W
Mounting: SMD
Kind of package: reel; tape
Case: TSOT25
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Gate charge: 4.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -6A
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.34Ω
Type of transistor: P-MOSFET + Schottky
кількість в упаковці: 1 шт
товар відсутній
| QS5U28TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U33TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U34TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS6J11TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS6J1TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній