Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4152) > Сторінка 38 з 70
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||
|---|---|---|---|---|---|---|---|---|---|
| APT5010JLLU3 | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
||||||
| APT5010JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
||||||
| APT5010JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
||||||
| APT5010JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
||||||
 |
APT5010JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 44A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.1Ω Pulsed drain current: 176A Power dissipation: 450W Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
|
||||
|
|
APT5010JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 44A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.1Ω Pulsed drain current: 176A Power dissipation: 450W Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
|
||||
 |
APT5010JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
|||||
|
|
APT5010JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
|||||
| APT5010JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
||||||
| APT5010JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
||||||
 |
APT5010LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5010LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5010LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5010LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5010LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5010LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5010LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5010LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
 |
APT5014BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5014BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5014BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5014BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
 |
APT5014SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 72nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5014SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 72nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5015BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5015BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5015BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5015BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5015SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5015SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5016BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5016BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5016BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5016BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5017BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5017BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5017BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 370W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5017BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 370W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5017SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5017SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5018BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5018BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5018BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5018BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5018SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5018SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5018SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced |
товар відсутній |
|||||
|
|
APT5018SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5020BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Case: TO247 Mounting: THT On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 225nC Technology: FREDFET; POWER MOS V® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 26A |
товар відсутній |
|||||
|
|
APT5020BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Case: TO247 Mounting: THT On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 225nC Technology: FREDFET; POWER MOS V® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 26A кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5020BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Case: TO247 Mounting: THT On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 225nC Technology: POWER MOS V® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 26A |
товар відсутній |
|||||
|
|
APT5020BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Case: TO247 Mounting: THT On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 225nC Technology: POWER MOS V® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 26A кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5020SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; D3PAK Mounting: SMD Case: D3PAK Technology: FREDFET; POWER MOS V® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 26A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
|
||||
|
|
APT5020SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; D3PAK Mounting: SMD Case: D3PAK Technology: FREDFET; POWER MOS V® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 26A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 14-21 дні (днів) |
|
||||
|
|
APT5024BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Case: TO247-3 Mounting: THT On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A |
товар відсутній |
|||||
|
|
APT5024BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Case: TO247-3 Mounting: THT On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5024BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Case: TO247-3 Mounting: THT On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A |
товар відсутній |
|||||
|
|
APT5024BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Case: TO247-3 Mounting: THT On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A кількість в упаковці: 1 шт |
товар відсутній |
|||||
|
|
APT5024BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Case: TO247-3 Mounting: THT On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 221nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A |
товар відсутній |
|||||
|
|
APT5024BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Case: TO247-3 Mounting: THT On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 221nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A кількість в упаковці: 1 шт |
товар відсутній |
| APT5010JLLU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JLLU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT5010JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT5010JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2916.52 грн |
| APT5010JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3499.82 грн |
| APT5010JVRU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JVRU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT5010JVRU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JVRU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT5010LFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010LFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010LLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010LLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
товар відсутній
| APT5010LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
товар відсутній
| APT5010LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5014BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5014BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5014BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5014BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5014SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5014SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5015BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5015BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5015BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5015BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5015SVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5015SVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5016BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5016BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5016BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
товар відсутній
| APT5016BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5017BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5017BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5017BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT5017BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5017SVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5017SVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5018BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
товар відсутній
| APT5018BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5018BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
товар відсутній
| APT5018BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5018SFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
товар відсутній
| APT5018SFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5018SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
товар відсутній
| APT5018SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5020BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: FREDFET; POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: FREDFET; POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
товар відсутній
| APT5020BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: FREDFET; POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: FREDFET; POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
кількість в упаковці: 1 шт
товар відсутній
| APT5020BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
товар відсутній
| APT5020BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
кількість в упаковці: 1 шт
товар відсутній
| APT5020SVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; D3PAK
Mounting: SMD
Case: D3PAK
Technology: FREDFET; POWER MOS V®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; D3PAK
Mounting: SMD
Case: D3PAK
Technology: FREDFET; POWER MOS V®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 662.31 грн |
| 3+ | 565.95 грн |
| APT5020SVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; D3PAK
Mounting: SMD
Case: D3PAK
Technology: FREDFET; POWER MOS V®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; D3PAK
Mounting: SMD
Case: D3PAK
Technology: FREDFET; POWER MOS V®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 794.77 грн |
| 3+ | 705.26 грн |
| APT5024BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
товар відсутній
| APT5024BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
кількість в упаковці: 1 шт
товар відсутній
| APT5024BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
товар відсутній
| APT5024BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
кількість в упаковці: 1 шт
товар відсутній
| APT5024BVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 221nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 221nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
товар відсутній
| APT5024BVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 221nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 221nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
кількість в упаковці: 1 шт
товар відсутній