APT5010JVRU2 Microchip Technology
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
Description: MOSFET N-CH 500V 44A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2584.15 грн |
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Технічний опис APT5010JVRU2 Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V.
Інші пропозиції APT5010JVRU2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT5010JVRU2 | Виробник : Microchip Technology | Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube |
товар відсутній |
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APT5010JVRU2 | Виробник : Microchip Technology | Trans MOSFET N-CH 500V 44A 4-Pin SOT-227 Tube |
товар відсутній |
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APT5010JVRU2 | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Mechanical mounting: screw Drain current: 33A On-state resistance: 0.1Ω Power dissipation: 450W Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 176A Semiconductor structure: diode/transistor Drain-source voltage: 500V кількість в упаковці: 1 шт |
товар відсутній |
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APT5010JVRU2 | Виробник : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-5-SOT227 |
товар відсутній |
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APT5010JVRU2 | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Mechanical mounting: screw Drain current: 33A On-state resistance: 0.1Ω Power dissipation: 450W Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 176A Semiconductor structure: diode/transistor Drain-source voltage: 500V |
товар відсутній |