Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4152) > Сторінка 37 з 70
| Фото | Назва | Виробник | Інформація |
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APT42F50S | MICROCHIP (MICROSEMI) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 135A Power dissipation: 625W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 170nC Kind of channel: enhanced |
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APT42F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 135A Power dissipation: 625W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 170nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT43F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced |
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| APT43F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT43F60L | MICROCHIP (MICROSEMI) |
APT43F60L THT N channel transistors |
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APT43GA90B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Collector current: 43A Power dissipation: 337W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 129A Mounting: THT Gate charge: 116nC Kind of package: tube Turn-on time: 28ns Turn-off time: 246ns |
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APT43GA90B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Collector current: 43A Power dissipation: 337W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 129A Mounting: THT Gate charge: 116nC Kind of package: tube Turn-on time: 28ns Turn-off time: 246ns кількість в упаковці: 1 шт |
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APT43GA90BD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3 Type of transistor: IGBT Collector current: 43A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 129A Turn-on time: 28ns Turn-off time: 246ns Collector-emitter voltage: 900V Power dissipation: 337W Technology: POWER MOS 8®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 116nC |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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APT43GA90BD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3 Type of transistor: IGBT Collector current: 43A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 129A Turn-on time: 28ns Turn-off time: 246ns Collector-emitter voltage: 900V Power dissipation: 337W Technology: POWER MOS 8®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 116nC кількість в упаковці: 1 шт |
на замовлення 70 шт: термін постачання 14-21 дні (днів) |
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| APT43M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced |
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| APT43M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT43M60L | MICROCHIP (MICROSEMI) |
APT43M60L THT N channel transistors |
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| APT44F80B2 | MICROCHIP (MICROSEMI) |
APT44F80B2 THT N channel transistors |
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APT44F80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 8® Gate charge: 305nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 173A Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.21Ω Type of transistor: N-MOSFET Power dissipation: 1135W Polarisation: unipolar |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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APT44F80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264 Mounting: THT Case: TO264 Technology: POWER MOS 8® Gate charge: 305nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 173A Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.21Ω Type of transistor: N-MOSFET Power dissipation: 1135W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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| APT44GA60B | MICROCHIP (MICROSEMI) |
APT44GA60B THT IGBT transistors |
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| APT44GA60BD30 | MICROCHIP (MICROSEMI) |
APT44GA60BD30 THT IGBT transistors |
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APT45GP120B2DQ2G | MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max Type of transistor: IGBT Collector current: 54A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Collector-emitter voltage: 1.2kV Power dissipation: 625W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 185nC |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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APT45GP120B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max Type of transistor: IGBT Collector current: 54A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Collector-emitter voltage: 1.2kV Power dissipation: 625W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 185nC кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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APT45GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 54A Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 185nC Technology: POWER MOS 7®; PT |
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APT45GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 54A Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 185nC Technology: POWER MOS 7®; PT кількість в упаковці: 1 шт |
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| APT45GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 170A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7®; PT |
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| APT45GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 170A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7®; PT кількість в упаковці: 1 шт |
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APT45GP120JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 34A Pulsed collector current: 170A Power dissipation: 329W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7® |
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APT45GP120JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 34A Pulsed collector current: 170A Power dissipation: 329W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7® кількість в упаковці: 1 шт |
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APT45GR65B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 56A Pulsed collector current: 224A Turn-on time: 47ns Turn-off time: 175ns Type of transistor: IGBT Power dissipation: 543W Kind of package: tube Gate charge: 150nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs |
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APT45GR65B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 56A Pulsed collector current: 224A Turn-on time: 47ns Turn-off time: 175ns Type of transistor: IGBT Power dissipation: 543W Kind of package: tube Gate charge: 150nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs кількість в упаковці: 1 шт |
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| APT45M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.18Ω Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 260A |
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| APT45M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.18Ω Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 260A кількість в упаковці: 1 шт |
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| APT46GA90JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B Case: SOT227B Pulsed collector current: 136A Collector current: 46A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 900V Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT46GA90JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B Case: SOT227B Pulsed collector current: 136A Collector current: 46A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 900V Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| APT47F60J | MICROCHIP (MICROSEMI) |
APT47F60J Transistor modules MOSFET |
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| APT47GA60JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B Case: SOT227B Pulsed collector current: 139A Collector current: 47A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT47GA60JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B Case: SOT227B Pulsed collector current: 139A Collector current: 47A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| APT47M60J | MICROCHIP (MICROSEMI) |
APT47M60J Transistor modules MOSFET |
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APT47N60BC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced |
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APT47N60BC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT47N60SC3G | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced |
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APT47N60SC3G | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT48M80B2 | MICROCHIP (MICROSEMI) |
APT48M80B2 THT N channel transistors |
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| APT48M80L | MICROCHIP (MICROSEMI) |
APT48M80L THT N channel transistors |
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APT4F120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Mounting: THT Case: TO220-3 Technology: POWER MOS 8® Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 15A Drain-source voltage: 1.2kV Drain current: 3A On-state resistance: 4.2Ω Type of transistor: N-MOSFET Power dissipation: 225W Polarisation: unipolar |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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APT4F120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Mounting: THT Case: TO220-3 Technology: POWER MOS 8® Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 15A Drain-source voltage: 1.2kV Drain current: 3A On-state resistance: 4.2Ω Type of transistor: N-MOSFET Power dissipation: 225W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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| APT4F120S | MICROCHIP (MICROSEMI) |
APT4F120S SMD N channel transistors |
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APT4M120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Mounting: THT Case: TO220-3 Technology: POWER MOS 8® Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 15A Drain-source voltage: 1.2kV Drain current: 3A On-state resistance: 3.8Ω Type of transistor: N-MOSFET Power dissipation: 225W Polarisation: unipolar |
на замовлення 170 шт: термін постачання 21-30 дні (днів) |
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APT4M120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Mounting: THT Case: TO220-3 Technology: POWER MOS 8® Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 15A Drain-source voltage: 1.2kV Drain current: 3A On-state resistance: 3.8Ω Type of transistor: N-MOSFET Power dissipation: 225W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 170 шт: термін постачання 14-21 дні (днів) |
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| APT5010B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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| APT5010B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT5010B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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| APT5010B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT5010B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Power dissipation: 520W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of package: tube Kind of channel: enhanced |
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| APT5010B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Power dissipation: 520W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| APT5010B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
товар відсутній |
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| APT5010B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| APT5010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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| APT5010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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| APT5010JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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| APT5010JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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| APT5010JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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| APT5010JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
| APT42F50S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
товар відсутній
| APT42F50S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT43F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
| APT43F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT43GA90B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 43A
Power dissipation: 337W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 28ns
Turn-off time: 246ns
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 43A
Power dissipation: 337W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 28ns
Turn-off time: 246ns
товар відсутній
| APT43GA90B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 43A
Power dissipation: 337W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 28ns
Turn-off time: 246ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 43A
Power dissipation: 337W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 28ns
Turn-off time: 246ns
кількість в упаковці: 1 шт
товар відсутній
| APT43GA90BD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Type of transistor: IGBT
Collector current: 43A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Turn-off time: 246ns
Collector-emitter voltage: 900V
Power dissipation: 337W
Technology: POWER MOS 8®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 116nC
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Type of transistor: IGBT
Collector current: 43A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Turn-off time: 246ns
Collector-emitter voltage: 900V
Power dissipation: 337W
Technology: POWER MOS 8®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 116nC
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 776.63 грн |
| 2+ | 609.14 грн |
| 4+ | 575.46 грн |
| APT43GA90BD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Type of transistor: IGBT
Collector current: 43A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Turn-off time: 246ns
Collector-emitter voltage: 900V
Power dissipation: 337W
Technology: POWER MOS 8®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 116nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Type of transistor: IGBT
Collector current: 43A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Turn-off time: 246ns
Collector-emitter voltage: 900V
Power dissipation: 337W
Technology: POWER MOS 8®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 116nC
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 931.96 грн |
| 2+ | 759.09 грн |
| 4+ | 690.56 грн |
| APT43M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
| APT43M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT44F80L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264
Mounting: THT
Case: TO264
Technology: POWER MOS 8®
Gate charge: 305nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 173A
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 1135W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264
Mounting: THT
Case: TO264
Technology: POWER MOS 8®
Gate charge: 305nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 173A
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 1135W
Polarisation: unipolar
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1498.08 грн |
| 2+ | 1315.66 грн |
| 3+ | 1314.93 грн |
| APT44F80L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264
Mounting: THT
Case: TO264
Technology: POWER MOS 8®
Gate charge: 305nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 173A
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 1135W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264
Mounting: THT
Case: TO264
Technology: POWER MOS 8®
Gate charge: 305nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 173A
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 1135W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1797.69 грн |
| 2+ | 1639.52 грн |
| 3+ | 1577.91 грн |
| 10+ | 1518.17 грн |
| APT45GP120B2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max
Type of transistor: IGBT
Collector current: 54A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Collector-emitter voltage: 1.2kV
Power dissipation: 625W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 185nC
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max
Type of transistor: IGBT
Collector current: 54A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Collector-emitter voltage: 1.2kV
Power dissipation: 625W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 185nC
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1632.12 грн |
| 2+ | 1432.8 грн |
| APT45GP120B2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max
Type of transistor: IGBT
Collector current: 54A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Collector-emitter voltage: 1.2kV
Power dissipation: 625W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 185nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max
Type of transistor: IGBT
Collector current: 54A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Collector-emitter voltage: 1.2kV
Power dissipation: 625W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 185nC
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1958.54 грн |
| 2+ | 1785.49 грн |
| APT45GP120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 185nC
Technology: POWER MOS 7®; PT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 185nC
Technology: POWER MOS 7®; PT
товар відсутній
| APT45GP120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 185nC
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 54A
Pulsed collector current: 170A
Turn-on time: 47ns
Turn-off time: 230ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 185nC
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
товар відсутній
| APT45GP120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 170A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®; PT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 170A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®; PT
товар відсутній
| APT45GP120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 170A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 170A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®; PT
кількість в упаковці: 1 шт
товар відсутній
| APT45GP120JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 34A
Pulsed collector current: 170A
Power dissipation: 329W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 34A
Pulsed collector current: 170A
Power dissipation: 329W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®
товар відсутній
| APT45GP120JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 34A
Pulsed collector current: 170A
Power dissipation: 329W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 34A
Pulsed collector current: 170A
Power dissipation: 329W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APT45GR65B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 56A
Pulsed collector current: 224A
Turn-on time: 47ns
Turn-off time: 175ns
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Gate charge: 150nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 56A
Pulsed collector current: 224A
Turn-on time: 47ns
Turn-off time: 175ns
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Gate charge: 150nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
товар відсутній
| APT45GR65B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 56A
Pulsed collector current: 224A
Turn-on time: 47ns
Turn-off time: 175ns
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Gate charge: 150nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 56A
Pulsed collector current: 224A
Turn-on time: 47ns
Turn-off time: 175ns
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Gate charge: 150nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
кількість в упаковці: 1 шт
товар відсутній
| APT45M100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.18Ω
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 260A
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.18Ω
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 260A
товар відсутній
| APT45M100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.18Ω
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 260A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.18Ω
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 260A
кількість в упаковці: 1 шт
товар відсутній
| APT46GA90JD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT46GA90JD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT47GA60JD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT47GA60JD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT47N60BC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT47N60BC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT47N60SC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
товар відсутній
| APT47N60SC3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT4F120K |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Technology: POWER MOS 8®
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Technology: POWER MOS 8®
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 353.23 грн |
| 3+ | 311.16 грн |
| 8+ | 307.5 грн |
| 10+ | 295.05 грн |
| APT4F120K |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Technology: POWER MOS 8®
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Technology: POWER MOS 8®
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 423.88 грн |
| 3+ | 387.75 грн |
| 8+ | 369 грн |
| 10+ | 354.06 грн |
| APT4M120K |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Technology: POWER MOS 8®
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Technology: POWER MOS 8®
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
на замовлення 170 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 414.73 грн |
| 3+ | 353.62 грн |
| 4+ | 270.89 грн |
| 9+ | 255.52 грн |
| APT4M120K |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Technology: POWER MOS 8®
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Technology: POWER MOS 8®
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 170 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 497.68 грн |
| 3+ | 440.67 грн |
| 4+ | 325.07 грн |
| 9+ | 306.62 грн |
| APT5010B2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010B2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010B2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT5010B2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010B2VFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT5010B2VFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010B2VRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
товар відсутній
| APT5010B2VRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT5010JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT5010JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT5010JLLU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT5010JLLU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній