Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 39 з 69
| Фото | Назва | Виробник | Інформація |
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APT50GN120B2G | MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 1.2kV Collector current: 66A Power dissipation: 543W Case: T-Max Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 55ns Turn-off time: 0.6µs |
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APT50GN120B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 1.2kV Collector current: 66A Power dissipation: 543W Case: T-Max Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 55ns Turn-off time: 0.6µs кількість в упаковці: 1 шт |
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| APT50GN120L2DQ2G | MICROCHIP (MICROSEMI) |
APT50GN120L2DQ2G THT IGBT transistors |
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APT50GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs |
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APT50GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs кількість в упаковці: 1 шт |
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| APT50GN60BDQ3G | MICROCHIP (MICROSEMI) |
APT50GN60BDQ3G THT IGBT transistors |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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APT50GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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APT50GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 14-21 дні (днів) |
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| APT50GP60B2DQ2G | MICROCHIP (MICROSEMI) |
APT50GP60B2DQ2G THT IGBT transistors |
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| APT50GP60BG | MICROCHIP (MICROSEMI) |
APT50GP60BG THT IGBT transistors |
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| APT50GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
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| APT50GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT50GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
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| APT50GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT50GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT |
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APT50GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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| APT50GR120JD30 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Collector current: 50A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 200A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT50GR120JD30 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Collector current: 50A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 200A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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APT50GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264 Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT |
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APT50GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264 Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT50GT120B2RDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 340nC Technology: NPT Case: T-Max |
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APT50GT120B2RDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 340nC Technology: NPT Case: T-Max кількість в упаковці: 1 шт |
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APT50GT120B2RG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 340nC Technology: NPT Case: T-Max |
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APT50GT120B2RG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 340nC Technology: NPT Case: T-Max кількість в упаковці: 1 шт |
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| APT50GT120JU2 | MICROCHIP (MICROSEMI) |
APT50GT120JU2 IGBT modules |
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| APT50GT120JU3 | MICROCHIP (MICROSEMI) |
APT50GT120JU3 IGBT modules |
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| APT50GT120LRDQ2G | MICROCHIP (MICROSEMI) |
APT50GT120LRDQ2G THT IGBT transistors |
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| APT50GT120LRG | MICROCHIP (MICROSEMI) |
APT50GT120LRG THT IGBT transistors |
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| APT50M38JFLL | MICROCHIP (MICROSEMI) | APT50M38JFLL Transistor modules MOSFET |
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| APT50M38JLL | MICROCHIP (MICROSEMI) |
APT50M38JLL Transistor modules MOSFET |
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| APT50M50JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 284A |
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| APT50M50JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 284A кількість в упаковці: 1 шт |
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| APT50M50JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 284A |
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| APT50M50JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 284A кількість в упаковці: 1 шт |
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| APT50M50JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 77A On-state resistance: 50mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 308A |
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| APT50M50JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 77A On-state resistance: 50mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 308A кількість в упаковці: 1 шт |
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| APT50M50JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 77A On-state resistance: 50mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 308A |
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| APT50M50JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 77A On-state resistance: 50mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 308A кількість в упаковці: 1 шт |
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| APT50M50L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX Case: TO264MAX Mounting: THT Drain-source voltage: 500V Drain current: 89A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 200nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 356A |
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| APT50M50L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX Case: TO264MAX Mounting: THT Drain-source voltage: 500V Drain current: 89A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 200nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 356A кількість в упаковці: 1 шт |
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| APT50M60L2VRG | MICROCHIP (MICROSEMI) | APT50M60L2VRG THT N channel transistors |
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| APT50M65B2FLLG | MICROCHIP (MICROSEMI) |
APT50M65B2FLLG THT N channel transistors |
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| APT50M65JFLL | MICROCHIP (MICROSEMI) |
APT50M65JFLL Transistor modules MOSFET |
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| APT50M65JLL | MICROCHIP (MICROSEMI) |
APT50M65JLL Transistor modules MOSFET |
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| APT50M65LFLLG | MICROCHIP (MICROSEMI) |
APT50M65LFLLG THT N channel transistors |
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| APT50M65LLLG | MICROCHIP (MICROSEMI) |
APT50M65LLLG THT N channel transistors |
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| APT50M75B2FLLG | MICROCHIP (MICROSEMI) | APT50M75B2FLLG THT N channel transistors |
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| APT50M75B2LLG | MICROCHIP (MICROSEMI) |
APT50M75B2LLG THT N channel transistors |
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| APT50M75JFLL | MICROCHIP (MICROSEMI) |
APT50M75JFLL Transistor modules MOSFET |
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| APT50M75JLL | MICROCHIP (MICROSEMI) | APT50M75JLL Transistor modules MOSFET |
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| APT50M75JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W Power dissipation: 290W Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 39A On-state resistance: 75mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 204A |
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| APT50M75JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W Power dissipation: 290W Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 39A On-state resistance: 75mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 204A кількість в упаковці: 1 шт |
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| APT50M75JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W Power dissipation: 290W Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 39A On-state resistance: 75mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 204A |
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| APT50M75JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W Power dissipation: 290W Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 39A On-state resistance: 75mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 204A кількість в упаковці: 1 шт |
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| APT50M75LFLLG | MICROCHIP (MICROSEMI) | APT50M75LFLLG THT N channel transistors |
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| APT50M75LLLG | MICROCHIP (MICROSEMI) |
APT50M75LLLG THT N channel transistors |
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| APT50M80LVFRG | MICROCHIP (MICROSEMI) | APT50M80LVFRG THT N channel transistors |
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| APT50M85JVFR | MICROCHIP (MICROSEMI) | APT50M85JVFR Transistor modules MOSFET |
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| APT50M85JVR | MICROCHIP (MICROSEMI) | APT50M85JVR Transistor modules MOSFET |
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| APT50MC120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 54A; ISOTOP; screw; Idm: 140A; 300W Power dissipation: 300W Case: ISOTOP Semiconductor structure: diode/transistor Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -10...25V Topology: boost chopper Pulsed drain current: 140A Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 34mΩ |
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| APT50GN120B2G |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
товар відсутній
| APT50GN120B2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
кількість в упаковці: 1 шт
товар відсутній
| APT50GN120L2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
APT50GN120L2DQ2G THT IGBT transistors
APT50GN120L2DQ2G THT IGBT transistors
товар відсутній
| APT50GN60BDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
товар відсутній
| APT50GN60BDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
кількість в упаковці: 1 шт
товар відсутній
| APT50GN60BDQ3G |
|
Виробник: MICROCHIP (MICROSEMI)
APT50GN60BDQ3G THT IGBT transistors
APT50GN60BDQ3G THT IGBT transistors
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1203.57 грн |
| 3+ | 1138.33 грн |
| APT50GN60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 560.24 грн |
| 2+ | 519.49 грн |
| 3+ | 504.8 грн |
| 5+ | 490.83 грн |
| APT50GN60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 672.29 грн |
| 2+ | 647.37 грн |
| 3+ | 605.75 грн |
| 5+ | 589 грн |
| 10+ | 569.6 грн |
| 30+ | 566.96 грн |
| APT50GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
товар відсутній
| APT50GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT50GP60JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
товар відсутній
| APT50GP60JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT50GR120B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
товар відсутній
| APT50GR120B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT50GR120JD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT50GR120JD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT50GR120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
товар відсутній
| APT50GR120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT50GT120B2RDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
товар відсутній
| APT50GT120B2RDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
кількість в упаковці: 1 шт
товар відсутній
| APT50GT120B2RG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
товар відсутній
| APT50GT120B2RG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
кількість в упаковці: 1 шт
товар відсутній
| APT50GT120LRDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
APT50GT120LRDQ2G THT IGBT transistors
APT50GT120LRDQ2G THT IGBT transistors
товар відсутній
| APT50M50JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
товар відсутній
| APT50M50JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
кількість в упаковці: 1 шт
товар відсутній
| APT50M50JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
товар відсутній
| APT50M50JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
кількість в упаковці: 1 шт
товар відсутній
| APT50M50JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
товар відсутній
| APT50M50JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
кількість в упаковці: 1 шт
товар відсутній
| APT50M50JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
товар відсутній
| APT50M50JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
кількість в упаковці: 1 шт
товар відсутній
| APT50M50L2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Drain-source voltage: 500V
Drain current: 89A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 200nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 356A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Drain-source voltage: 500V
Drain current: 89A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 200nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 356A
товар відсутній
| APT50M50L2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Drain-source voltage: 500V
Drain current: 89A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 200nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 356A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Drain-source voltage: 500V
Drain current: 89A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 200nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 356A
кількість в упаковці: 1 шт
товар відсутній
| APT50M60L2VRG |
Виробник: MICROCHIP (MICROSEMI)
APT50M60L2VRG THT N channel transistors
APT50M60L2VRG THT N channel transistors
товар відсутній
| APT50M65B2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
APT50M65B2FLLG THT N channel transistors
APT50M65B2FLLG THT N channel transistors
товар відсутній
| APT50M65LFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
APT50M65LFLLG THT N channel transistors
APT50M65LFLLG THT N channel transistors
товар відсутній
| APT50M75B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
APT50M75B2FLLG THT N channel transistors
APT50M75B2FLLG THT N channel transistors
товар відсутній
| APT50M75B2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
APT50M75B2LLG THT N channel transistors
APT50M75B2LLG THT N channel transistors
товар відсутній
| APT50M75JLLU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 204A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 204A
товар відсутній
| APT50M75JLLU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 204A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 204A
кількість в упаковці: 1 шт
товар відсутній
| APT50M75JLLU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 204A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 204A
товар відсутній
| APT50M75JLLU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 204A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 204A
кількість в упаковці: 1 шт
товар відсутній
| APT50M75LFLLG |
Виробник: MICROCHIP (MICROSEMI)
APT50M75LFLLG THT N channel transistors
APT50M75LFLLG THT N channel transistors
товар відсутній
| APT50M80LVFRG |
Виробник: MICROCHIP (MICROSEMI)
APT50M80LVFRG THT N channel transistors
APT50M80LVFRG THT N channel transistors
товар відсутній
| APT50MC120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 54A; ISOTOP; screw; Idm: 140A; 300W
Power dissipation: 300W
Case: ISOTOP
Semiconductor structure: diode/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...25V
Topology: boost chopper
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 34mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 54A; ISOTOP; screw; Idm: 140A; 300W
Power dissipation: 300W
Case: ISOTOP
Semiconductor structure: diode/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...25V
Topology: boost chopper
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 34mΩ
товар відсутній