Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4152) > Сторінка 43 з 70
| Фото | Назва | Виробник | Інформація |
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| APT65GP60J | MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Technology: POWER MOS 7®; PT Collector current: 60A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 250A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT65GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Technology: POWER MOS 7®; PT Collector current: 60A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 250A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| APT65GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Technology: POWER MOS 7®; PT Collector current: 60A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 250A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT65GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Technology: POWER MOS 7®; PT Collector current: 60A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 250A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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APT65GP60L2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX Type of transistor: IGBT Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Collector current: 96A Power dissipation: 833W Case: TO264MAX Gate-emitter voltage: ±30V Pulsed collector current: 250A Mounting: THT Gate charge: 0.21µC Kind of package: tube Turn-on time: 85ns Turn-off time: 0.22µs Features of semiconductor devices: integrated anti-parallel diode |
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APT65GP60L2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX Type of transistor: IGBT Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Collector current: 96A Power dissipation: 833W Case: TO264MAX Gate-emitter voltage: ±30V Pulsed collector current: 250A Mounting: THT Gate charge: 0.21µC Kind of package: tube Turn-on time: 85ns Turn-off time: 0.22µs Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| APT66F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Case: TO247MAX Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET |
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| APT66F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Case: TO247MAX Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT66F60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264 Case: TO264 Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET |
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APT66F60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264 Case: TO264 Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| APT66M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Mounting: THT Case: TO247MAX Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A |
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| APT66M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Mounting: THT Case: TO247MAX Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A кількість в упаковці: 1 шт |
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APT66M60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264 Mounting: THT Case: TO264 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A |
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APT66M60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264 Mounting: THT Case: TO264 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A кількість в упаковці: 1 шт |
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| APT68GA60B | MICROCHIP (MICROSEMI) |
APT68GA60B THT IGBT transistors |
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APT68GA60B2D40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max Mounting: THT Gate charge: 198nC Collector-emitter voltage: 600V Collector current: 68A Gate-emitter voltage: ±30V Pulsed collector current: 202A Case: T-Max Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Turn-on time: 46ns Turn-off time: 304ns Power dissipation: 520W Type of transistor: IGBT |
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APT68GA60B2D40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max Mounting: THT Gate charge: 198nC Collector-emitter voltage: 600V Collector current: 68A Gate-emitter voltage: ±30V Pulsed collector current: 202A Case: T-Max Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Turn-on time: 46ns Turn-off time: 304ns Power dissipation: 520W Type of transistor: IGBT |
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APT68GA60LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264 Technology: POWER MOS 8®; PT Case: TO264 Mounting: THT Kind of package: tube Turn-on time: 46ns Turn-off time: 304ns Power dissipation: 520W Collector-emitter voltage: 600V Collector current: 68A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 198nC Gate-emitter voltage: ±30V Pulsed collector current: 202A Type of transistor: IGBT |
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APT68GA60LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264 Technology: POWER MOS 8®; PT Case: TO264 Mounting: THT Kind of package: tube Turn-on time: 46ns Turn-off time: 304ns Power dissipation: 520W Collector-emitter voltage: 600V Collector current: 68A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 198nC Gate-emitter voltage: ±30V Pulsed collector current: 202A Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT70GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3 Mounting: THT Power dissipation: 961W Kind of package: tube Gate charge: 412nC Technology: NPT Ultra Fast IGBT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Turn-on time: 81ns Turn-off time: 394ns Type of transistor: IGBT |
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APT70GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3 Mounting: THT Power dissipation: 961W Kind of package: tube Gate charge: 412nC Technology: NPT Ultra Fast IGBT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Turn-on time: 81ns Turn-off time: 394ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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| APT70GR120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Mechanical mounting: screw Electrical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A |
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| APT70GR120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Mechanical mounting: screw Electrical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A кількість в упаковці: 1 шт |
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| APT70GR120JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Mechanical mounting: screw Electrical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A |
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| APT70GR120JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Mechanical mounting: screw Electrical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A кількість в упаковці: 1 шт |
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APT70GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264 Mounting: THT Power dissipation: 961W Kind of package: tube Gate charge: 412nC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Turn-on time: 81ns Turn-off time: 394ns Type of transistor: IGBT |
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APT70GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264 Mounting: THT Power dissipation: 961W Kind of package: tube Gate charge: 412nC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Turn-on time: 81ns Turn-off time: 394ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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| APT70GR65B | MICROCHIP (MICROSEMI) |
APT70GR65B THT IGBT transistors |
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| APT75DF170HJ | MICROCHIP (MICROSEMI) |
APT75DF170HJ Sing. ph. diode bridge rectif. - others |
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| APT75DL120HJ | MICROCHIP (MICROSEMI) |
APT75DL120HJ Sing. ph. diode bridge rectif. - others |
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APT75DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 75A; TO247AC; automotive industry Type of diode: rectifying Max. off-state voltage: 1kV Load current: 75A Case: TO247AC Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Technology: FRED Application: automotive industry |
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APT75DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 75A; TO247AC; automotive industry Type of diode: rectifying Max. off-state voltage: 1kV Load current: 75A Case: TO247AC Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Technology: FRED Application: automotive industry кількість в упаковці: 1 шт |
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| APT75DQ120BG | MICROCHIP (MICROSEMI) |
APT75DQ120BG THT universal diodes |
на замовлення 44 шт: термін постачання 14-21 дні (днів) |
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APT75DQ120SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 75A; D3PAK; FRED Mounting: SMD Application: automotive industry Type of diode: rectifying Technology: FRED Case: D3PAK Max. off-state voltage: 1.2kV Load current: 75A Semiconductor structure: single diode |
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APT75DQ120SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 75A; D3PAK; FRED Mounting: SMD Application: automotive industry Type of diode: rectifying Technology: FRED Case: D3PAK Max. off-state voltage: 1.2kV Load current: 75A Semiconductor structure: single diode кількість в упаковці: 1 шт |
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APT75DQ60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; TO247AC; automotive industry Type of diode: rectifying Max. off-state voltage: 0.6kV Load current: 75A Case: TO247AC Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Technology: FRED Application: automotive industry |
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APT75DQ60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; TO247AC; automotive industry Type of diode: rectifying Max. off-state voltage: 0.6kV Load current: 75A Case: TO247AC Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Technology: FRED Application: automotive industry кількість в упаковці: 1 шт |
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APT75DQ60SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 75A; D3PAK; FRED; automotive industry Mounting: SMD Application: automotive industry Type of diode: rectifying Technology: FRED Case: D3PAK Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode |
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APT75DQ60SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 75A; D3PAK; FRED; automotive industry Mounting: SMD Application: automotive industry Type of diode: rectifying Technology: FRED Case: D3PAK Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode кількість в упаковці: 1 шт |
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| APT75F50B2 | MICROCHIP (MICROSEMI) |
APT75F50B2 THT N channel transistors |
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APT75F50L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 47A; Idm: 230A; 1.04kW; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 230A Power dissipation: 1.04kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 290nC Kind of channel: enhanced |
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APT75F50L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 47A; Idm: 230A; 1.04kW; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 230A Power dissipation: 1.04kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 290nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT75GN120B2G | MICROCHIP (MICROSEMI) |
APT75GN120B2G THT IGBT transistors |
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| APT75GN120JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 57A Pulsed collector current: 225A |
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| APT75GN120JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Application: for inductive load; for UPS; motors; SMPS Case: SOT227B Technology: Field Stop; Trench Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 57A Pulsed collector current: 225A кількість в упаковці: 1 шт |
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| APT75GN120LG | MICROCHIP (MICROSEMI) |
APT75GN120LG THT IGBT transistors |
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APT75GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
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APT75GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns кількість в упаковці: 1 шт |
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APT75GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
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APT75GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns кількість в упаковці: 1 шт |
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APT75GN60LDQ3G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 93A; 536W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
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APT75GN60LDQ3G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 93A; 536W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns кількість в упаковці: 1 шт |
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APT75GN60SDQ2G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode |
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APT75GN60SDQ2G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| APT75GP120B2G | MICROCHIP (MICROSEMI) |
APT75GP120B2G THT IGBT transistors |
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| APT75GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
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| APT75GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: POWER MOS 7®; PT Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT75GP120JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 543W Technology: POWER MOS 7® Mechanical mounting: screw |
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APT75GP120JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 543W Technology: POWER MOS 7® Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT75GT120JRDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: NPT; POWER MOS 7® Mechanical mounting: screw |
товар відсутній |
| APT65GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT65GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT65GP60JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT65GP60JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT65GP60L2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 96A
Power dissipation: 833W
Case: TO264MAX
Gate-emitter voltage: ±30V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.22µs
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 96A
Power dissipation: 833W
Case: TO264MAX
Gate-emitter voltage: ±30V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.22µs
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| APT65GP60L2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 96A
Power dissipation: 833W
Case: TO264MAX
Gate-emitter voltage: ±30V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.22µs
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 96A
Power dissipation: 833W
Case: TO264MAX
Gate-emitter voltage: ±30V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.22µs
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| APT66F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Case: TO247MAX
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Case: TO247MAX
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
товар відсутній
| APT66F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Case: TO247MAX
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Case: TO247MAX
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| APT66F60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
товар відсутній
| APT66F60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| APT66M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Mounting: THT
Case: TO247MAX
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Mounting: THT
Case: TO247MAX
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
товар відсутній
| APT66M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Mounting: THT
Case: TO247MAX
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Mounting: THT
Case: TO247MAX
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
кількість в упаковці: 1 шт
товар відсутній
| APT66M60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
товар відсутній
| APT66M60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
кількість в упаковці: 1 шт
товар відсутній
| APT68GA60B2D40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max
Mounting: THT
Gate charge: 198nC
Collector-emitter voltage: 600V
Collector current: 68A
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Case: T-Max
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max
Mounting: THT
Gate charge: 198nC
Collector-emitter voltage: 600V
Collector current: 68A
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Case: T-Max
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Type of transistor: IGBT
товар відсутній
| APT68GA60B2D40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max
Mounting: THT
Gate charge: 198nC
Collector-emitter voltage: 600V
Collector current: 68A
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Case: T-Max
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max
Mounting: THT
Gate charge: 198nC
Collector-emitter voltage: 600V
Collector current: 68A
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Case: T-Max
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Type of transistor: IGBT
товар відсутній
| APT68GA60LD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
товар відсутній
| APT68GA60LD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT70GR120B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
товар відсутній
| APT70GR120B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT70GR120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
товар відсутній
| APT70GR120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
кількість в упаковці: 1 шт
товар відсутній
| APT70GR120JD60 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
товар відсутній
| APT70GR120JD60 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
кількість в упаковці: 1 шт
товар відсутній
| APT70GR120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
товар відсутній
| APT70GR120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT75DF170HJ |
|
Виробник: MICROCHIP (MICROSEMI)
APT75DF170HJ Sing. ph. diode bridge rectif. - others
APT75DF170HJ Sing. ph. diode bridge rectif. - others
товар відсутній
| APT75DL120HJ |
|
Виробник: MICROCHIP (MICROSEMI)
APT75DL120HJ Sing. ph. diode bridge rectif. - others
APT75DL120HJ Sing. ph. diode bridge rectif. - others
товар відсутній
| APT75DQ100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 75A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 75A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 75A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 75A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
товар відсутній
| APT75DQ100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 75A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 75A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 75A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 75A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| APT75DQ120BG |
|
Виробник: MICROCHIP (MICROSEMI)
APT75DQ120BG THT universal diodes
APT75DQ120BG THT universal diodes
на замовлення 44 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 448.48 грн |
| 3+ | 376.03 грн |
| 8+ | 355.82 грн |
| APT75DQ120SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 75A; D3PAK; FRED
Mounting: SMD
Application: automotive industry
Type of diode: rectifying
Technology: FRED
Case: D3PAK
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 75A; D3PAK; FRED
Mounting: SMD
Application: automotive industry
Type of diode: rectifying
Technology: FRED
Case: D3PAK
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
товар відсутній
| APT75DQ120SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 75A; D3PAK; FRED
Mounting: SMD
Application: automotive industry
Type of diode: rectifying
Technology: FRED
Case: D3PAK
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 75A; D3PAK; FRED
Mounting: SMD
Application: automotive industry
Type of diode: rectifying
Technology: FRED
Case: D3PAK
Max. off-state voltage: 1.2kV
Load current: 75A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
товар відсутній
| APT75DQ60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 75A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 75A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
товар відсутній
| APT75DQ60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 75A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 75A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| APT75DQ60SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 75A; D3PAK; FRED; automotive industry
Mounting: SMD
Application: automotive industry
Type of diode: rectifying
Technology: FRED
Case: D3PAK
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 75A; D3PAK; FRED; automotive industry
Mounting: SMD
Application: automotive industry
Type of diode: rectifying
Technology: FRED
Case: D3PAK
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
товар відсутній
| APT75DQ60SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 75A; D3PAK; FRED; automotive industry
Mounting: SMD
Application: automotive industry
Type of diode: rectifying
Technology: FRED
Case: D3PAK
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 75A; D3PAK; FRED; automotive industry
Mounting: SMD
Application: automotive industry
Type of diode: rectifying
Technology: FRED
Case: D3PAK
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
товар відсутній
| APT75F50L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; Idm: 230A; 1.04kW; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 230A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 290nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; Idm: 230A; 1.04kW; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 230A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 290nC
Kind of channel: enhanced
товар відсутній
| APT75F50L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; Idm: 230A; 1.04kW; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 230A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 290nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; Idm: 230A; 1.04kW; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 230A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 290nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT75GN120JDQ3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 57A
Pulsed collector current: 225A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 57A
Pulsed collector current: 225A
товар відсутній
| APT75GN120JDQ3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 57A
Pulsed collector current: 225A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Application: for inductive load; for UPS; motors; SMPS
Case: SOT227B
Technology: Field Stop; Trench
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 57A
Pulsed collector current: 225A
кількість в упаковці: 1 шт
товар відсутній
| APT75GN60BDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
товар відсутній
| APT75GN60BDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
товар відсутній
| APT75GN60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
товар відсутній
| APT75GN60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
товар відсутній
| APT75GN60LDQ3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
товар відсутній
| APT75GN60LDQ3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
товар відсутній
| APT75GN60SDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| APT75GN60SDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| APT75GP120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
товар відсутній
| APT75GP120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT75GP120JDQ3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
товар відсутній
| APT75GP120JDQ3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT75GT120JRDQ3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
товар відсутній