Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 41 з 69
| Фото | Назва | Виробник | Інформація |
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| APT6021BFLLG | MICROCHIP (MICROSEMI) |
 APT6021BFLLG THT N channel transistors |
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| APT6021BLLG | MICROCHIP (MICROSEMI) |
APT6021BLLG THT N channel transistors |
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APT6021SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 116A; 400W; D3PAK Mounting: SMD Drain current: 29A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: D3PAK On-state resistance: 0.21Ω Pulsed drain current: 116A Power dissipation: 400W Gate charge: 80nC Polarisation: unipolar Technology: POWER MOS 7® |
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APT6021SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 116A; 400W; D3PAK Mounting: SMD Drain current: 29A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: D3PAK On-state resistance: 0.21Ω Pulsed drain current: 116A Power dissipation: 400W Gate charge: 80nC Polarisation: unipolar Technology: POWER MOS 7® кількість в упаковці: 1 шт |
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APT6025BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 96A; 325W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 96A Power dissipation: 325W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 65nC Kind of channel: enhanced |
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APT6025BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 96A; 325W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 96A Power dissipation: 325W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 65nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT6025BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 325W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 325W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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APT6025BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 325W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 325W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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APT6025BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 100A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 275nC Kind of channel: enhanced |
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APT6025BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 100A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 275nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT6025SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A Mounting: SMD Drain-source voltage: 600V Drain current: 25A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 370W Polarisation: unipolar Gate charge: 275nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Case: D3PAK |
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APT6025SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A Mounting: SMD Drain-source voltage: 600V Drain current: 25A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 370W Polarisation: unipolar Gate charge: 275nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Case: D3PAK кількість в упаковці: 1 шт |
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| APT6029BFLLG | MICROCHIP (MICROSEMI) |
APT6029BFLLG THT N channel transistors |
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APT6029BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 300W; TO247-3 Mounting: THT Gate charge: 65nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Case: TO247-3 Drain-source voltage: 600V Drain current: 21A On-state resistance: 0.29Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar |
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APT6029BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 300W; TO247-3 Mounting: THT Gate charge: 65nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Case: TO247-3 Drain-source voltage: 600V Drain current: 21A On-state resistance: 0.29Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar кількість в упаковці: 1 шт |
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| APT6029SLLG | MICROCHIP (MICROSEMI) |
APT6029SLLG SMD N channel transistors |
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APT6030BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 84A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
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APT6030BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 84A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT6038BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3 Mounting: THT Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 68A Case: TO247-3 Drain-source voltage: 600V Drain current: 17A On-state resistance: 0.38Ω Type of transistor: N-MOSFET |
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APT6038BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3 Mounting: THT Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 68A Case: TO247-3 Drain-source voltage: 600V Drain current: 17A On-state resistance: 0.38Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT6038BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3 Mounting: THT Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 68A Case: TO247-3 Drain-source voltage: 600V Drain current: 17A On-state resistance: 0.38Ω Type of transistor: N-MOSFET |
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APT6038BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3 Mounting: THT Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 68A Case: TO247-3 Drain-source voltage: 600V Drain current: 17A On-state resistance: 0.38Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT6038SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; D3PAK Mounting: SMD Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 68A Case: D3PAK Drain-source voltage: 600V Drain current: 17A On-state resistance: 0.38Ω Type of transistor: N-MOSFET |
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APT6038SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; D3PAK Mounting: SMD Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 68A Case: D3PAK Drain-source voltage: 600V Drain current: 17A On-state resistance: 0.38Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT6040BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Case: TO247-3 Mounting: THT Kind of channel: enhanced |
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APT6040BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Case: TO247-3 Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT6040BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Case: TO247-3 Mounting: THT Kind of channel: enhanced |
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APT6040BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Case: TO247-3 Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT60D100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO247AC; Ufmax: 1.9V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 60A Max. load current: 152A Reverse recovery time: 280ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO247AC Max. forward voltage: 1.9V Max. forward impulse current: 540A Technology: FRED |
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APT60D100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO247AC; Ufmax: 1.9V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 60A Max. load current: 152A Reverse recovery time: 280ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO247AC Max. forward voltage: 1.9V Max. forward impulse current: 540A Technology: FRED кількість в упаковці: 1 шт |
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APT60D100LCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 2.5V; 34ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 60A Max. load current: 152A Reverse recovery time: 34ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO264 Max. forward voltage: 2.5V Max. forward impulse current: 540A Technology: FRED |
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APT60D100LCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 2.5V; 34ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 60A Max. load current: 152A Reverse recovery time: 34ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO264 Max. forward voltage: 2.5V Max. forward impulse current: 540A Technology: FRED кількість в упаковці: 1 шт |
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APT60D100SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 60A; D3PAK; FRED Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED |
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APT60D100SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 60A; D3PAK; FRED Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED кількість в упаковці: 1 шт |
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APT60D120BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60A; TO247AC; FRED Type of diode: rectifying Max. off-state voltage: 1.2kV Load current: 60A Case: TO247AC Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Technology: FRED |
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APT60D120BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60A; TO247AC; FRED Type of diode: rectifying Max. off-state voltage: 1.2kV Load current: 60A Case: TO247AC Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Technology: FRED кількість в упаковці: 1 шт |
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APT60D120SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 60A; D3PAK; FRED Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED |
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APT60D120SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 60A; D3PAK; FRED Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED кількість в упаковці: 1 шт |
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APT60D20BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 60A Max. load current: 156A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO247AC Max. forward voltage: 1.1V Max. forward impulse current: 600A Technology: FRED |
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APT60D20BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 60A Max. load current: 156A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO247AC Max. forward voltage: 1.1V Max. forward impulse current: 600A Technology: FRED кількість в упаковці: 1 шт |
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APT60D40BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 60A Max. load current: 146A Reverse recovery time: 37ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO247AC Max. forward voltage: 1.3V Max. forward impulse current: 600A Technology: FRED |
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APT60D40BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 60A Max. load current: 146A Reverse recovery time: 37ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO247AC Max. forward voltage: 1.3V Max. forward impulse current: 600A Technology: FRED кількість в упаковці: 1 шт |
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APT60D40LCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO264; Ufmax: 1.6V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 60A Max. load current: 146A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO264 Max. forward voltage: 1.6V Max. forward impulse current: 600A Technology: FRED |
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APT60D40LCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO264; Ufmax: 1.6V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 60A Max. load current: 146A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO264 Max. forward voltage: 1.6V Max. forward impulse current: 600A Technology: FRED кількість в упаковці: 1 шт |
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APT60D40SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 60A; D3PAK; FRED Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED |
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APT60D40SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 60A; D3PAK; FRED Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED кількість в упаковці: 1 шт |
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APT60D60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.6V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Max. load current: 132A Reverse recovery time: 130ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO247AC Max. forward voltage: 1.6V Max. forward impulse current: 600A Technology: FRED |
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APT60D60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.6V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Max. load current: 132A Reverse recovery time: 130ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO247AC Max. forward voltage: 1.6V Max. forward impulse current: 600A Technology: FRED кількість в упаковці: 1 шт |
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APT60D60LCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO264; Ufmax: 1.9V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Max. load current: 132A Reverse recovery time: 40ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO264 Max. forward voltage: 1.9V Max. forward impulse current: 600A Technology: FRED |
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APT60D60LCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO264; Ufmax: 1.9V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Max. load current: 132A Reverse recovery time: 40ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO264 Max. forward voltage: 1.9V Max. forward impulse current: 600A Technology: FRED кількість в упаковці: 1 шт |
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APT60D60SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED |
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APT60D60SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED кількість в упаковці: 1 шт |
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| APT60DF20HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 200V; If: 60A; Ifsm: 500A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 60A Case: SOT227B Max. forward voltage: 1.4V Max. forward impulse current: 0.5kA Technology: FRED Electrical mounting: screw Kind of package: tube Version: module Mechanical mounting: screw Leads: M4 screws |
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| APT60DF20HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 200V; If: 60A; Ifsm: 500A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 60A Case: SOT227B Max. forward voltage: 1.4V Max. forward impulse current: 0.5kA Technology: FRED Electrical mounting: screw Kind of package: tube Version: module Mechanical mounting: screw Leads: M4 screws кількість в упаковці: 1 шт |
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APT60DF60HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 500A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 60A Case: SOT227B Max. forward voltage: 2.3V Max. forward impulse current: 0.5kA Technology: FRED Electrical mounting: screw Kind of package: tube Version: module Mechanical mounting: screw Leads: M4 screws |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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APT60DF60HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 500A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 60A Case: SOT227B Max. forward voltage: 2.3V Max. forward impulse current: 0.5kA Technology: FRED Electrical mounting: screw Kind of package: tube Version: module Mechanical mounting: screw Leads: M4 screws кількість в упаковці: 1 шт |
на замовлення 16 шт: термін постачання 14-21 дні (днів) |
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APT60DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 60A; TO247AC; automotive industry Type of diode: rectifying Max. off-state voltage: 1kV Load current: 60A Case: TO247AC Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Technology: FRED Application: automotive industry |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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APT60DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 60A; TO247AC; automotive industry Type of diode: rectifying Max. off-state voltage: 1kV Load current: 60A Case: TO247AC Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Technology: FRED Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 66 шт: термін постачання 14-21 дні (днів) |
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APT60DQ100LCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 3V; 29ns Case: TO264 Mounting: THT Application: automotive industry Features of semiconductor devices: ultrafast switching Technology: FRED Max. off-state voltage: 1kV Max. load current: 1A Max. forward voltage: 3V Load current: 60A Semiconductor structure: common cathode; double Reverse recovery time: 29ns Max. forward impulse current: 540A Type of diode: rectifying |
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APT60DQ100LCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 3V; 29ns Case: TO264 Mounting: THT Application: automotive industry Features of semiconductor devices: ultrafast switching Technology: FRED Max. off-state voltage: 1kV Max. load current: 1A Max. forward voltage: 3V Load current: 60A Semiconductor structure: common cathode; double Reverse recovery time: 29ns Max. forward impulse current: 540A Type of diode: rectifying кількість в упаковці: 1 шт |
товар відсутній |
| APT6021SFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 116A; 400W; D3PAK
Mounting: SMD
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: D3PAK
On-state resistance: 0.21Ω
Pulsed drain current: 116A
Power dissipation: 400W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 7®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 116A; 400W; D3PAK
Mounting: SMD
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: D3PAK
On-state resistance: 0.21Ω
Pulsed drain current: 116A
Power dissipation: 400W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 7®
товар відсутній
| APT6021SFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 116A; 400W; D3PAK
Mounting: SMD
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: D3PAK
On-state resistance: 0.21Ω
Pulsed drain current: 116A
Power dissipation: 400W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 116A; 400W; D3PAK
Mounting: SMD
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: D3PAK
On-state resistance: 0.21Ω
Pulsed drain current: 116A
Power dissipation: 400W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APT6025BFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 96A; 325W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 325W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 65nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 96A; 325W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 325W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 65nC
Kind of channel: enhanced
товар відсутній
| APT6025BFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 96A; 325W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 325W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 65nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 96A; 325W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 325W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 65nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT6025BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 325W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 325W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 325W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 325W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1166.38 грн |
| APT6025BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 325W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 325W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 325W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 325W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1399.66 грн |
| 3+ | 1307.55 грн |
| 10+ | 1243.25 грн |
| APT6025BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
товар відсутній
| APT6025BVRG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT6025SVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Mounting: SMD
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 100A
Case: D3PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Mounting: SMD
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 100A
Case: D3PAK
товар відсутній
| APT6025SVRG |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Mounting: SMD
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 100A
Case: D3PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 25A; Idm: 100A
Mounting: SMD
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 100A
Case: D3PAK
кількість в упаковці: 1 шт
товар відсутній
| APT6029BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 300W; TO247-3
Mounting: THT
Gate charge: 65nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 300W; TO247-3
Mounting: THT
Gate charge: 65nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
товар відсутній
| APT6029BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 300W; TO247-3
Mounting: THT
Gate charge: 65nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 300W; TO247-3
Mounting: THT
Gate charge: 65nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| APT6030BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
товар відсутній
| APT6030BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT6038BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3
Mounting: THT
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3
Mounting: THT
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
товар відсутній
| APT6038BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3
Mounting: THT
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3
Mounting: THT
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| APT6038BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3
Mounting: THT
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3
Mounting: THT
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
товар відсутній
| APT6038BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3
Mounting: THT
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; TO247-3
Mounting: THT
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: TO247-3
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| APT6038SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; D3PAK
Mounting: SMD
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: D3PAK
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; D3PAK
Mounting: SMD
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: D3PAK
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
товар відсутній
| APT6038SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; D3PAK
Mounting: SMD
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: D3PAK
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 265W; D3PAK
Mounting: SMD
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Case: D3PAK
Drain-source voltage: 600V
Drain current: 17A
On-state resistance: 0.38Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| APT6040BVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247-3
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247-3
Mounting: THT
Kind of channel: enhanced
товар відсутній
| APT6040BVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247-3
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247-3
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT6040BVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247-3
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247-3
Mounting: THT
Kind of channel: enhanced
товар відсутній
| APT6040BVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247-3
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247-3
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT60D100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO247AC; Ufmax: 1.9V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Max. load current: 152A
Reverse recovery time: 280ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.9V
Max. forward impulse current: 540A
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO247AC; Ufmax: 1.9V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Max. load current: 152A
Reverse recovery time: 280ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.9V
Max. forward impulse current: 540A
Technology: FRED
товар відсутній
| APT60D100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO247AC; Ufmax: 1.9V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Max. load current: 152A
Reverse recovery time: 280ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.9V
Max. forward impulse current: 540A
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO247AC; Ufmax: 1.9V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Max. load current: 152A
Reverse recovery time: 280ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.9V
Max. forward impulse current: 540A
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D100LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 2.5V; 34ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Max. load current: 152A
Reverse recovery time: 34ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 2.5V
Max. forward impulse current: 540A
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 2.5V; 34ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Max. load current: 152A
Reverse recovery time: 34ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 2.5V
Max. forward impulse current: 540A
Technology: FRED
товар відсутній
| APT60D100LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 2.5V; 34ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Max. load current: 152A
Reverse recovery time: 34ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 2.5V
Max. forward impulse current: 540A
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 2.5V; 34ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Max. load current: 152A
Reverse recovery time: 34ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 2.5V
Max. forward impulse current: 540A
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D100SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
товар відсутній
| APT60D100SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; TO247AC; FRED
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; TO247AC; FRED
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
товар відсутній
| APT60D120BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; TO247AC; FRED
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; TO247AC; FRED
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D120SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
товар відсутній
| APT60D120SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D20BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 60A
Max. load current: 156A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.1V
Max. forward impulse current: 600A
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 60A
Max. load current: 156A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.1V
Max. forward impulse current: 600A
Technology: FRED
товар відсутній
| APT60D20BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 60A
Max. load current: 156A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.1V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 60A
Max. load current: 156A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.1V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D40BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Max. load current: 146A
Reverse recovery time: 37ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.3V
Max. forward impulse current: 600A
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Max. load current: 146A
Reverse recovery time: 37ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.3V
Max. forward impulse current: 600A
Technology: FRED
товар відсутній
| APT60D40BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Max. load current: 146A
Reverse recovery time: 37ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.3V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Max. load current: 146A
Reverse recovery time: 37ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.3V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D40LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO264; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Max. load current: 146A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 1.6V
Max. forward impulse current: 600A
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO264; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Max. load current: 146A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 1.6V
Max. forward impulse current: 600A
Technology: FRED
товар відсутній
| APT60D40LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO264; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Max. load current: 146A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 1.6V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 600A; TO264; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Max. load current: 146A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 1.6V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D40SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
товар відсутній
| APT60D40SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 132A
Reverse recovery time: 130ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.6V
Max. forward impulse current: 600A
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 132A
Reverse recovery time: 130ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.6V
Max. forward impulse current: 600A
Technology: FRED
товар відсутній
| APT60D60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 132A
Reverse recovery time: 130ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.6V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247AC; Ufmax: 1.6V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 132A
Reverse recovery time: 130ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 1.6V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D60LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO264; Ufmax: 1.9V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 132A
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 1.9V
Max. forward impulse current: 600A
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO264; Ufmax: 1.9V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 132A
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 1.9V
Max. forward impulse current: 600A
Technology: FRED
товар відсутній
| APT60D60LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO264; Ufmax: 1.9V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 132A
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 1.9V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO264; Ufmax: 1.9V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 132A
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO264
Max. forward voltage: 1.9V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60D60SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
товар відсутній
| APT60D60SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60DF20HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 60A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 0.5kA
Technology: FRED
Electrical mounting: screw
Kind of package: tube
Version: module
Mechanical mounting: screw
Leads: M4 screws
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 60A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 0.5kA
Technology: FRED
Electrical mounting: screw
Kind of package: tube
Version: module
Mechanical mounting: screw
Leads: M4 screws
товар відсутній
| APT60DF20HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 60A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 0.5kA
Technology: FRED
Electrical mounting: screw
Kind of package: tube
Version: module
Mechanical mounting: screw
Leads: M4 screws
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 60A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 0.5kA
Technology: FRED
Electrical mounting: screw
Kind of package: tube
Version: module
Mechanical mounting: screw
Leads: M4 screws
кількість в упаковці: 1 шт
товар відсутній
| APT60DF60HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 0.5kA
Technology: FRED
Electrical mounting: screw
Kind of package: tube
Version: module
Mechanical mounting: screw
Leads: M4 screws
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 0.5kA
Technology: FRED
Electrical mounting: screw
Kind of package: tube
Version: module
Mechanical mounting: screw
Leads: M4 screws
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1655.41 грн |
| 2+ | 1453.4 грн |
| 10+ | 1421.07 грн |
| APT60DF60HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 0.5kA
Technology: FRED
Electrical mounting: screw
Kind of package: tube
Version: module
Mechanical mounting: screw
Leads: M4 screws
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 0.5kA
Technology: FRED
Electrical mounting: screw
Kind of package: tube
Version: module
Mechanical mounting: screw
Leads: M4 screws
кількість в упаковці: 1 шт
на замовлення 16 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1986.49 грн |
| 2+ | 1811.16 грн |
| 10+ | 1705.28 грн |
| APT60DQ100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 60A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 60A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
на замовлення 66 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 373.5 грн |
| 4+ | 249.09 грн |
| 10+ | 235.87 грн |
| APT60DQ100BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 60A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; TO247AC; automotive industry
Type of diode: rectifying
Max. off-state voltage: 1kV
Load current: 60A
Case: TO247AC
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Technology: FRED
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 66 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 448.19 грн |
| 4+ | 310.41 грн |
| 10+ | 283.04 грн |
| APT60DQ100LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 3V; 29ns
Case: TO264
Mounting: THT
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 1A
Max. forward voltage: 3V
Load current: 60A
Semiconductor structure: common cathode; double
Reverse recovery time: 29ns
Max. forward impulse current: 540A
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 3V; 29ns
Case: TO264
Mounting: THT
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 1A
Max. forward voltage: 3V
Load current: 60A
Semiconductor structure: common cathode; double
Reverse recovery time: 29ns
Max. forward impulse current: 540A
Type of diode: rectifying
товар відсутній
| APT60DQ100LCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 3V; 29ns
Case: TO264
Mounting: THT
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 1A
Max. forward voltage: 3V
Load current: 60A
Semiconductor structure: common cathode; double
Reverse recovery time: 29ns
Max. forward impulse current: 540A
Type of diode: rectifying
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 540A; TO264; Ufmax: 3V; 29ns
Case: TO264
Mounting: THT
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 1A
Max. forward voltage: 3V
Load current: 60A
Semiconductor structure: common cathode; double
Reverse recovery time: 29ns
Max. forward impulse current: 540A
Type of diode: rectifying
кількість в упаковці: 1 шт
товар відсутній