Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4152) > Сторінка 40 з 70
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT50M65JLL | MICROCHIP (MICROSEMI) |
 APT50M65JLL Transistor modules MOSFET |
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| APT50M65LFLLG | MICROCHIP (MICROSEMI) |
APT50M65LFLLG THT N channel transistors |
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| APT50M65LLLG | MICROCHIP (MICROSEMI) |
APT50M65LLLG THT N channel transistors |
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| APT50M75B2FLLG | MICROCHIP (MICROSEMI) | APT50M75B2FLLG THT N channel transistors |
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| APT50M75B2LLG | MICROCHIP (MICROSEMI) |
APT50M75B2LLG THT N channel transistors |
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| APT50M75JFLL | MICROCHIP (MICROSEMI) |
APT50M75JFLL Transistor modules MOSFET |
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| APT50M75JLL | MICROCHIP (MICROSEMI) | APT50M75JLL Transistor modules MOSFET |
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| APT50M75JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W Power dissipation: 290W Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 39A On-state resistance: 75mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 204A |
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| APT50M75JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W Power dissipation: 290W Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 39A On-state resistance: 75mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 204A кількість в упаковці: 1 шт |
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| APT50M75JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W Power dissipation: 290W Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 39A On-state resistance: 75mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 204A |
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| APT50M75JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W Power dissipation: 290W Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 39A On-state resistance: 75mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 204A кількість в упаковці: 1 шт |
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| APT50M75LFLLG | MICROCHIP (MICROSEMI) | APT50M75LFLLG THT N channel transistors |
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| APT50M75LLLG | MICROCHIP (MICROSEMI) |
APT50M75LLLG THT N channel transistors |
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APT50M80LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 58A Pulsed drain current: 232A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 423nC Kind of channel: enhanced |
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APT50M80LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 58A Pulsed drain current: 232A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 423nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT50M85JVFR | MICROCHIP (MICROSEMI) | APT50M85JVFR Transistor modules MOSFET |
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| APT50M85JVR | MICROCHIP (MICROSEMI) | APT50M85JVR Transistor modules MOSFET |
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| APT50MC120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 54A; ISOTOP; screw; Idm: 140A; 300W Power dissipation: 300W Case: ISOTOP Semiconductor structure: diode/transistor Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -10...25V Topology: boost chopper Pulsed drain current: 140A Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 34mΩ |
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| APT50MC120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 54A; ISOTOP; screw; Idm: 140A; 300W Power dissipation: 300W Case: ISOTOP Semiconductor structure: diode/transistor Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -10...25V Topology: boost chopper Pulsed drain current: 140A Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 34mΩ кількість в упаковці: 1 шт |
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| APT50N60JCCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; ISOTOP; screw; Idm: 130A; 290W Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 130A Power dissipation: 290W Case: ISOTOP Gate-source voltage: ±20V On-state resistance: 45mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT50N60JCCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; ISOTOP; screw; Idm: 130A; 290W Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 130A Power dissipation: 290W Case: ISOTOP Gate-source voltage: ±20V On-state resistance: 45mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT51F50J | MICROCHIP (MICROSEMI) |
APT51F50J Transistor modules MOSFET |
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| APT51M50J | MICROCHIP (MICROSEMI) |
APT51M50J Transistor modules MOSFET |
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| APT53F80J | MICROCHIP (MICROSEMI) |
APT53F80J Transistor modules MOSFET |
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APT53N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 417W; TO247 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 417W Case: TO247 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced |
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APT53N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 417W; TO247 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 417W Case: TO247 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT54GA60B | MICROCHIP (MICROSEMI) |
APT54GA60B THT IGBT transistors |
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APT54GA60BD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 54A; 416W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 158nC Collector-emitter voltage: 600V Collector current: 54A Gate-emitter voltage: ±30V Pulsed collector current: 161A Turn-on time: 37ns Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 416W Turn-off time: 291ns Type of transistor: IGBT |
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APT54GA60BD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 54A; 416W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 158nC Collector-emitter voltage: 600V Collector current: 54A Gate-emitter voltage: ±30V Pulsed collector current: 161A Turn-on time: 37ns Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 416W Turn-off time: 291ns Type of transistor: IGBT |
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| APT56F50B2 | MICROCHIP (MICROSEMI) |
APT56F50B2 THT N channel transistors |
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APT56F50L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 175A; 780W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 175A Power dissipation: 780W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 0.22µC Kind of channel: enhanced |
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APT56F50L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 175A; 780W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 175A Power dissipation: 780W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 0.22µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT56F60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264 Case: TO264 Mounting: THT Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 280nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 210A Drain-source voltage: 600V Drain current: 38A On-state resistance: 0.11Ω Type of transistor: N-MOSFET |
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APT56F60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264 Case: TO264 Mounting: THT Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 280nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 210A Drain-source voltage: 600V Drain current: 38A On-state resistance: 0.11Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| APT56M50B2 | MICROCHIP (MICROSEMI) |
APT56M50B2 THT N channel transistors |
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| APT56M50L | MICROCHIP (MICROSEMI) |
APT56M50L THT N channel transistors |
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APT56M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 1040W; TO247 Mounting: THT Case: TO247 Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1.04kW On-state resistance: 0.11Ω Drain current: 60A Drain-source voltage: 600V Gate charge: 280nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V |
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APT56M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 1040W; TO247 Mounting: THT Case: TO247 Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1.04kW On-state resistance: 0.11Ω Drain current: 60A Drain-source voltage: 600V Gate charge: 280nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT56M60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264 Mounting: THT Case: TO264 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1.04kW On-state resistance: 0.11Ω Drain current: 38A Drain-source voltage: 600V Gate charge: 280nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 210A |
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APT56M60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264 Mounting: THT Case: TO264 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1.04kW On-state resistance: 0.11Ω Drain current: 38A Drain-source voltage: 600V Gate charge: 280nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 210A кількість в упаковці: 1 шт |
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| APT58F50J | MICROCHIP (MICROSEMI) |
APT58F50J Transistor modules MOSFET |
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| APT58M50J | MICROCHIP (MICROSEMI) |
APT58M50J Transistor modules MOSFET |
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| APT58M50JCU2 | MICROCHIP (MICROSEMI) |
APT58M50JCU2 Transistor modules MOSFET |
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| APT58M50JU2 | MICROCHIP (MICROSEMI) |
APT58M50JU2 Transistor modules MOSFET |
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| APT58M50JU3 | MICROCHIP (MICROSEMI) |
APT58M50JU3 Transistor modules MOSFET |
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| APT58M80J | MICROCHIP (MICROSEMI) |
APT58M80J Transistor modules MOSFET |
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| APT6010B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
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| APT6010B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT6010B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
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| APT6010B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT6010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT6010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT6010JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT6010JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT6010LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
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APT6010LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT6010LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
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APT6010LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT6011B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 49A; Idm: 196A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 450nC Kind of channel: enhanced |
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| APT6011B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 49A; Idm: 196A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 450nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT50M65LFLLG |
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Виробник: MICROCHIP (MICROSEMI)
APT50M65LFLLG THT N channel transistors
APT50M65LFLLG THT N channel transistors
товар відсутній
| APT50M75B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
APT50M75B2FLLG THT N channel transistors
APT50M75B2FLLG THT N channel transistors
товар відсутній
| APT50M75B2LLG |
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Виробник: MICROCHIP (MICROSEMI)
APT50M75B2LLG THT N channel transistors
APT50M75B2LLG THT N channel transistors
товар відсутній
| APT50M75JLLU2 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 204A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 204A
товар відсутній
| APT50M75JLLU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 204A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 204A
кількість в упаковці: 1 шт
товар відсутній
| APT50M75JLLU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 204A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 204A
товар відсутній
| APT50M75JLLU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 204A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 39A; ISOTOP; screw; Idm: 204A; 290W
Power dissipation: 290W
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 39A
On-state resistance: 75mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 204A
кількість в упаковці: 1 шт
товар відсутній
| APT50M75LFLLG |
Виробник: MICROCHIP (MICROSEMI)
APT50M75LFLLG THT N channel transistors
APT50M75LFLLG THT N channel transistors
товар відсутній
| APT50M80LVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 423nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 423nC
Kind of channel: enhanced
товар відсутній
| APT50M80LVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 423nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 423nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT50MC120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 54A; ISOTOP; screw; Idm: 140A; 300W
Power dissipation: 300W
Case: ISOTOP
Semiconductor structure: diode/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...25V
Topology: boost chopper
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 34mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 54A; ISOTOP; screw; Idm: 140A; 300W
Power dissipation: 300W
Case: ISOTOP
Semiconductor structure: diode/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...25V
Topology: boost chopper
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 34mΩ
товар відсутній
| APT50MC120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 54A; ISOTOP; screw; Idm: 140A; 300W
Power dissipation: 300W
Case: ISOTOP
Semiconductor structure: diode/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...25V
Topology: boost chopper
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 34mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 54A; ISOTOP; screw; Idm: 140A; 300W
Power dissipation: 300W
Case: ISOTOP
Semiconductor structure: diode/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...25V
Topology: boost chopper
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 34mΩ
кількість в упаковці: 1 шт
товар відсутній
| APT50N60JCCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; ISOTOP; screw; Idm: 130A; 290W
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 290W
Case: ISOTOP
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; ISOTOP; screw; Idm: 130A; 290W
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 290W
Case: ISOTOP
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT50N60JCCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; ISOTOP; screw; Idm: 130A; 290W
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 290W
Case: ISOTOP
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; ISOTOP; screw; Idm: 130A; 290W
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 290W
Case: ISOTOP
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT53N60BC6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 417W; TO247
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 417W; TO247
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT53N60BC6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 417W; TO247
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 417W; TO247
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT54GA60BD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 54A; 416W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 158nC
Collector-emitter voltage: 600V
Collector current: 54A
Gate-emitter voltage: ±30V
Pulsed collector current: 161A
Turn-on time: 37ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 416W
Turn-off time: 291ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 54A; 416W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 158nC
Collector-emitter voltage: 600V
Collector current: 54A
Gate-emitter voltage: ±30V
Pulsed collector current: 161A
Turn-on time: 37ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 416W
Turn-off time: 291ns
Type of transistor: IGBT
товар відсутній
| APT54GA60BD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 54A; 416W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 158nC
Collector-emitter voltage: 600V
Collector current: 54A
Gate-emitter voltage: ±30V
Pulsed collector current: 161A
Turn-on time: 37ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 416W
Turn-off time: 291ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 54A; 416W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 158nC
Collector-emitter voltage: 600V
Collector current: 54A
Gate-emitter voltage: ±30V
Pulsed collector current: 161A
Turn-on time: 37ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 416W
Turn-off time: 291ns
Type of transistor: IGBT
товар відсутній
| APT56F50L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 175A; 780W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 175A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.22µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 175A; 780W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 175A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.22µC
Kind of channel: enhanced
товар відсутній
| APT56F50L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 175A; 780W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 175A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.22µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 175A; 780W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 175A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.22µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT56F60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
товар відсутній
| APT56F60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| APT56M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 1040W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
On-state resistance: 0.11Ω
Drain current: 60A
Drain-source voltage: 600V
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 1040W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
On-state resistance: 0.11Ω
Drain current: 60A
Drain-source voltage: 600V
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
товар відсутній
| APT56M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 1040W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
On-state resistance: 0.11Ω
Drain current: 60A
Drain-source voltage: 600V
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 1040W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
On-state resistance: 0.11Ω
Drain current: 60A
Drain-source voltage: 600V
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT56M60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
On-state resistance: 0.11Ω
Drain current: 38A
Drain-source voltage: 600V
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
On-state resistance: 0.11Ω
Drain current: 38A
Drain-source voltage: 600V
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
товар відсутній
| APT56M60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
On-state resistance: 0.11Ω
Drain current: 38A
Drain-source voltage: 600V
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 210A; 1.04kW; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
On-state resistance: 0.11Ω
Drain current: 38A
Drain-source voltage: 600V
Gate charge: 280nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 210A
кількість в упаковці: 1 шт
товар відсутній
| APT6010B2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
товар відсутній
| APT6010B2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT6010B2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
товар відсутній
| APT6010B2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT6010JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT6010JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT6010JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT6010JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT6010LFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
товар відсутній
| APT6010LFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT6010LLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
товар відсутній
| APT6010LLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 54A
Pulsed drain current: 216A
Power dissipation: 690W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT6011B2VRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 49A; Idm: 196A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 49A; Idm: 196A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
товар відсутній
| APT6011B2VRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 49A; Idm: 196A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 49A; Idm: 196A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 450nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній