Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXYH40N120B3D1 | IXYS |
Description: IGBT 1200V 86A 480W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 22ns/177ns Switching Energy: 2.7mJ (on), 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 480 W |
на замовлення 299 шт: термін постачання 21-31 дні (днів) |
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IXYK120N120C3 | IXYS |
Description: IGBT 1200V 240A 1500W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A Supplier Device Package: TO-264 (IXYK) Td (on/off) @ 25°C: 35ns/176ns Switching Energy: 6.75mJ (on), 5.1mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 412 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 700 A Power - Max: 1500 W |
на замовлення 266 шт: термін постачання 21-31 дні (днів) |
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IXYR50N120C3D1 | IXYS |
Description: IGBT 1200V 56A 290W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A Supplier Device Package: ISOPLUS247™ Td (on/off) @ 25°C: 28ns/133ns Switching Energy: 3mJ (on), 1mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 142 nC Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 210 A Power - Max: 290 W |
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IXYX120N120C3 | IXYS |
Description: IGBT 1200V 240A 1500W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 35ns/176ns Switching Energy: 6.75mJ (on), 5.1mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 412 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 700 A Power - Max: 1500 W |
на замовлення 301 шт: термін постачання 21-31 дні (днів) |
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IXYH20N120C3D1 | IXYS |
Description: IGBT 1200V 36A 230W TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 88 A Power - Max: 230 W |
на замовлення 298 шт: термін постачання 21-31 дні (днів) |
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IXYJ20N120C3D1 | IXYS |
Description: IGBT 1200V 21A 105W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: ISO247 Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 84 A Power - Max: 105 W |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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IXYP20N120C3 | IXYS |
Description: IGBT 1200V 40A 278W TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 278 W |
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IXYH20N120C3 | IXYS |
Description: IGBT 1200V 40A 278W TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 278 W |
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IXTX5N250 | IXYS |
Description: MOSFET N-CH 2500V 5A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 2500 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8560 pF @ 25 V |
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IXTN5N250 | IXYS | Description: MOSFET N-CH 2500V 5A SOT227B |
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IXGV25N250S | IXYS | Description: IGBT 2500V 60A 250W PLUS220SMD |
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IXTF02N450 | IXYS |
Description: MOSFET N-CH 4500V 200MA I4PAC Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V |
на замовлення 1028 шт: термін постачання 21-31 дні (днів) |
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IXGF25N250 | IXYS |
Description: IGBT 2500V 30A 114W I4-PAK Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Gate Charge: 75 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 200 A Power - Max: 114 W |
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IXTA02N450HV | IXYS |
Description: MOSFET N-CH 4500V 200MA TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V |
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IXGF25N300 | IXYS | Description: IGBT 3000V 27A 114W I4-PAK |
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IXTT1N450HV | IXYS |
Description: MOSFET N-CH 4500V 1A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V |
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IXGL75N250 | IXYS | Description: IGBT 2500V 110A 430W I5-PAK |
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IXTF03N400 | IXYS |
Description: MOSFET N-CH 4000V 300MA I4PAC Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4000 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V |
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IXGF20N300 | IXYS |
Description: IGBT 3000V 22A ISOPLUSI4 Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A Supplier Device Package: ISOPLUS i4-PAC™ Gate Charge: 31 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 103 A Power - Max: 100 W |
на замовлення 699 шт: термін постачання 21-31 дні (днів) |
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IXTT02N450HV | IXYS |
Description: MOSFET N-CH 4500V 200MA TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V |
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IXGH10N300 | IXYS |
Description: IGBT 3000V 18A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A Supplier Device Package: TO-247AD Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 40 A Power - Max: 100 W |
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IXGK75N250 | IXYS |
Description: IGBT NPT 2500V 170A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A Supplier Device Package: TO-264 (IXGK) IGBT Type: NPT Gate Charge: 410 nC Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 530 A Power - Max: 780 W |
на замовлення 294 шт: термін постачання 21-31 дні (днів) |
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IXGT2N250 | IXYS |
Description: IGBT 2500V 5.5A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A Supplier Device Package: TO-268AA Gate Charge: 10.5 nC Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 13.5 A Power - Max: 32 W |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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IXTF1N450 | IXYS | Description: MOSFET N-CH 4500V 900MA I4PAC |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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IXGH2N250 | IXYS |
Description: IGBT 2500V 5.5A 32W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A Supplier Device Package: TO-247AD Gate Charge: 10.5 nC Part Status: Active Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 13.5 A Power - Max: 32 W |
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IXTA02N250 | IXYS | Description: MOSFET N-CH 2500V 0.2A TO263 |
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IXGF36N300 | IXYS | Description: IGBT 3000V 36A 160W I4-PAK |
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IXGF20N250 | IXYS |
Description: IGBT 2500V 23A ISOPLUSI4 Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A Supplier Device Package: ISOPLUS i4-PAC™ Gate Charge: 53 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 105 A Power - Max: 100 W |
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MMIX1F360N15T2 | IXYS |
Description: MOSFET N-CH 150V 235A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 235A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V Power Dissipation (Max): 680W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V |
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MIXA60WH1200TEH | IXYS | Description: IGBT 3PHASE 1200V 85A MODULE |
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VUM33-06PH | IXYS |
Description: MODULE MOSFET BRIDGE RECT V1-B Packaging: Box Package / Case: 6-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Diode Type: Single Phase (PFC Module) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 106 A Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 50 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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IXTT2N170D2 | IXYS |
Description: MOSFET N-CH 1700V 2A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 568W (Tc) Supplier Device Package: TO-268AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V |
на замовлення 268 шт: термін постачання 21-31 дні (днів) |
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IXXH30N65B4 | IXYS |
Description: IGBT PT 650V 65A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 32ns/170ns Switching Energy: 1.55mJ (on), 480µJ (off) Test Condition: 400V, 30A, 15Ohm, 15V Gate Charge: 52 nC Part Status: Active Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 146 A Power - Max: 230 W |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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IXXH60N65B4H1 | IXYS |
Description: IGBT 650V 116A 380W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/145ns Switching Energy: 3.13mJ (on), 1.15mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 116 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 230 A Power - Max: 380 W |
на замовлення 77 шт: термін постачання 21-31 дні (днів) |
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IXXH60N65B4 | IXYS |
Description: IGBT 650V 116A 455W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/145ns Switching Energy: 3.13mJ (on), 1.15mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 116 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 455 W |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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IXXH60N65C4 | IXYS |
Description: IGBT 650V 118A 455W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/133ns Switching Energy: 3.2mJ (on), 830µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 118 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 455 W |
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IXXH40N65B4 | IXYS |
Description: IGBT 650V 120A 455W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 28ns/144ns Switching Energy: 1.4mJ (on), 560µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 455 W |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IXXR110N65B4H1 | IXYS |
Description: IGBT 650V 150A 455W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 460 A Power - Max: 455 W |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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IXXH80N65B4 | IXYS |
Description: IGBT 650V 160A 625W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 38ns/120ns Switching Energy: 3.77mJ (on), 1.2mJ (off) Test Condition: 400V, 80A, 3Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 430 A Power - Max: 625 W |
на замовлення 2337 шт: термін постачання 21-31 дні (днів) |
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IXXH80N65B4H1 | IXYS |
Description: IGBT PT 650V 160A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 38ns/120ns Switching Energy: 3.77mJ (on), 1.2mJ (off) Test Condition: 400V, 80A, 3Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 430 A Power - Max: 625 W |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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IXXN110N65C4H1 | IXYS |
Description: IGBT MOD 650V 210A 750W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 210 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 750 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V |
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IXXH110N65C4 | IXYS |
Description: IGBT 650V 234A 880W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 35ns/143ns Switching Energy: 2.3mJ (on), 600µJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 180 nC Part Status: Active Current - Collector (Ic) (Max): 234 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 880 W |
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IXXN110N65B4H1 | IXYS |
Description: IGBT MOD 650V 215A 750W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 215 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 750 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V |
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IXXK110N65B4H1 | IXYS |
Description: IGBT 650V 240A 880W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 630 A Power - Max: 880 W |
на замовлення 288 шт: термін постачання 21-31 дні (днів) |
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IXXX110N65B4H1 | IXYS |
Description: IGBT 650V 240A 880W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 630 A Power - Max: 880 W |
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IXXK160N65C4 | IXYS |
Description: IGBT 650V 290A 940W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 52ns/197ns Switching Energy: 3.5mJ (on), 1.3mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 422 nC Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 800 A Power - Max: 940 W |
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IXXX160N65C4 | IXYS |
Description: IGBT 650V 290A 940W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 52ns/197ns Switching Energy: 3.5mJ (on), 1.3mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 422 nC Part Status: Active Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 800 A Power - Max: 940 W |
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IXXK160N65B4 | IXYS |
Description: IGBT 650V 310A 940W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 52ns/220ns Switching Energy: 3.3mJ (on), 1.88mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 425 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 860 A Power - Max: 940 W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IXXX160N65B4 | IXYS |
Description: IGBT 650V 310A 940W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 52ns/220ns Switching Energy: 3.3mJ (on), 1.88mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 425 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 860 A Power - Max: 940 W |
на замовлення 519 шт: термін постачання 21-31 дні (днів) |
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IXXK200N65B4 | IXYS |
Description: IGBT 650V 370A 1150W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 62ns/245ns Switching Energy: 4.4mJ (on), 2.2mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 553 nC Part Status: Active Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 1150 W |
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IXXX200N65B4 | IXYS |
Description: IGBT 650V 370A 1150W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 62ns/245ns Switching Energy: 4.4mJ (on), 2.2mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 553 nC Part Status: Active Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 1150 W |
на замовлення 531 шт: термін постачання 21-31 дні (днів) |
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SLFL-M-WHT | IXYS | Description: FLASHLIGHT LED AAA(1) |
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IXBF10N300C | IXYS |
Description: IGBT 3000V 29A 240W ISOPLUSI4 Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 700 ns Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A Supplier Device Package: ISOPLUS i4-PAC™ Td (on/off) @ 25°C: 32ns/390ns Switching Energy: 7.2mJ (on), 1.04mJ (off) Test Condition: 1500V, 10A, 10Ohm, 15V Gate Charge: 208 nC Part Status: Active Current - Collector (Ic) (Max): 29 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 240 A Power - Max: 240 W |
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IXBF15N300C | IXYS | Description: IGBT 3000V 37A 300W ISOPLUSI4 |
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MMIX1F210N30P3 | IXYS |
Description: MOSFET N-CH 300V 108A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
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IXYH20N65C3 | IXYS |
Description: IGBT 650V 50A 230W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 350µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 230 W |
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IXYP15N65C3 | IXYS |
Description: IGBT 650V 38A 200W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 15ns/68ns Switching Energy: 270µJ (on), 230µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 200 W |
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IXYP10N65C3 | IXYS |
Description: IGBT 650V 30A 160W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 20ns/77ns Switching Energy: 240µJ (on), 110µJ (off) Test Condition: 400V, 10A, 50Ohm, 15V Gate Charge: 18 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 54 A Power - Max: 160 W |
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IXYH40N90C3D1 | IXYS |
Description: IGBT 900V 90A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 27ns/78ns Switching Energy: 1.9mJ (on), 1mJ (off) Test Condition: 450V, 40A, 5Ohm, 15V Gate Charge: 74 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W |
на замовлення 923 шт: термін постачання 21-31 дні (днів) |
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IXYK140N90C3 | IXYS |
Description: IGBT 900V 310A 1630W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A Supplier Device Package: TO-264 (IXYK) Td (on/off) @ 25°C: 40ns/145ns Switching Energy: 4.3mJ (on), 4mJ (off) Test Condition: 450V, 100A, 1Ohm, 15V Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1630 W |
на замовлення 582 шт: термін постачання 21-31 дні (днів) |
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IXYH40N120B3D1 |
Виробник: IXYS
Description: IGBT 1200V 86A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
Description: IGBT 1200V 86A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
на замовлення 299 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 828.67 грн |
30+ | 646.44 грн |
120+ | 608.42 грн |
IXYK120N120C3 |
Виробник: IXYS
Description: IGBT 1200V 240A 1500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
Description: IGBT 1200V 240A 1500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 266 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2534.07 грн |
25+ | 2022.59 грн |
100+ | 1896.17 грн |
IXYR50N120C3D1 |
Виробник: IXYS
Description: IGBT 1200V 56A 290W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
Description: IGBT 1200V 56A 290W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
товар відсутній
IXYX120N120C3 |
Виробник: IXYS
Description: IGBT 1200V 240A 1500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
Description: IGBT 1200V 240A 1500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 301 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2682.86 грн |
30+ | 2165.28 грн |
120+ | 2020.92 грн |
IXYH20N120C3D1 |
Виробник: IXYS
Description: IGBT 1200V 36A 230W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
Description: IGBT 1200V 36A 230W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
на замовлення 298 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 698.18 грн |
30+ | 536.78 грн |
120+ | 480.28 грн |
IXYJ20N120C3D1 |
Виробник: IXYS
Description: IGBT 1200V 21A 105W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISO247
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 105 W
Description: IGBT 1200V 21A 105W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISO247
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 105 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)IXYP20N120C3 |
Виробник: IXYS
Description: IGBT 1200V 40A 278W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
Description: IGBT 1200V 40A 278W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYH20N120C3 |
Виробник: IXYS
Description: IGBT 1200V 40A 278W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
Description: IGBT 1200V 40A 278W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXTX5N250 |
Виробник: IXYS
Description: MOSFET N-CH 2500V 5A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8560 pF @ 25 V
Description: MOSFET N-CH 2500V 5A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8560 pF @ 25 V
товар відсутній
IXTF02N450 |
Виробник: IXYS
Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
на замовлення 1028 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3072.78 грн |
25+ | 2479.39 грн |
100+ | 2314.09 грн |
IXGF25N250 |
Виробник: IXYS
Description: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
Description: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
товар відсутній
IXTA02N450HV |
Виробник: IXYS
Description: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Description: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXTT1N450HV |
Виробник: IXYS
Description: MOSFET N-CH 4500V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Description: MOSFET N-CH 4500V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
товар відсутній
IXTF03N400 |
Виробник: IXYS
Description: MOSFET N-CH 4000V 300MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4000 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
Description: MOSFET N-CH 4000V 300MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4000 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
товар відсутній
IXGF20N300 |
Виробник: IXYS
Description: IGBT 3000V 22A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
Description: IGBT 3000V 22A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
на замовлення 699 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3645.82 грн |
25+ | 2941.95 грн |
100+ | 2745.82 грн |
IXTT02N450HV |
Виробник: IXYS
Description: MOSFET N-CH 4500V 200MA TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Description: MOSFET N-CH 4500V 200MA TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXGH10N300 |
Виробник: IXYS
Description: IGBT 3000V 18A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
Description: IGBT 3000V 18A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товар відсутній
IXGK75N250 |
Виробник: IXYS
Description: IGBT NPT 2500V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
Description: IGBT NPT 2500V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8043.24 грн |
25+ | 6745.83 грн |
100+ | 6396.05 грн |
IXGT2N250 |
Виробник: IXYS
Description: IGBT 2500V 5.5A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-268AA
Gate Charge: 10.5 nC
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
Description: IGBT 2500V 5.5A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-268AA
Gate Charge: 10.5 nC
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4653.04 грн |
IXTF1N450 |
Виробник: IXYS
Description: MOSFET N-CH 4500V 900MA I4PAC
Description: MOSFET N-CH 4500V 900MA I4PAC
на замовлення 200 шт:
термін постачання 21-31 дні (днів)IXGH2N250 |
Виробник: IXYS
Description: IGBT 2500V 5.5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
Description: IGBT 2500V 5.5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
товар відсутній
IXGF20N250 |
Виробник: IXYS
Description: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
Description: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
товар відсутній
MMIX1F360N15T2 |
Виробник: IXYS
Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
товар відсутній
VUM33-06PH |
Виробник: IXYS
Description: MODULE MOSFET BRIDGE RECT V1-B
Packaging: Box
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Diode Type: Single Phase (PFC Module)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 106 A
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 50 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: MODULE MOSFET BRIDGE RECT V1-B
Packaging: Box
Package / Case: 6-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Diode Type: Single Phase (PFC Module)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 106 A
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 50 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4522.56 грн |
10+ | 3959.01 грн |
IXTT2N170D2 |
Виробник: IXYS
Description: MOSFET N-CH 1700V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Description: MOSFET N-CH 1700V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 568W (Tc)
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
на замовлення 268 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2128.13 грн |
30+ | 1698.47 грн |
120+ | 1592.33 грн |
IXXH30N65B4 |
Виробник: IXYS
Description: IGBT PT 650V 65A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
Description: IGBT PT 650V 65A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 315.9 грн |
30+ | 240.62 грн |
IXXH60N65B4H1 |
Виробник: IXYS
Description: IGBT 650V 116A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
Description: IGBT 650V 116A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
на замовлення 77 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 806.54 грн |
30+ | 620.06 грн |
IXXH60N65B4 |
Виробник: IXYS
Description: IGBT 650V 116A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 455 W
Description: IGBT 650V 116A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 455 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 421.2 грн |
30+ | 321.3 грн |
120+ | 275.4 грн |
510+ | 229.74 грн |
IXXH60N65C4 |
Виробник: IXYS
Description: IGBT 650V 118A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
Description: IGBT 650V 118A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
товар відсутній
IXXH40N65B4 |
Виробник: IXYS
Description: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
Description: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
на замовлення 750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
300+ | 300 грн |
IXXR110N65B4H1 |
Виробник: IXYS
Description: IGBT 650V 150A 455W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 455 W
Description: IGBT 650V 150A 455W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 455 W
на замовлення 28 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1771.79 грн |
IXXH80N65B4 |
Виробник: IXYS
Description: IGBT 650V 160A 625W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
Description: IGBT 650V 160A 625W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 2337 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 537.18 грн |
30+ | 413.24 грн |
120+ | 369.74 грн |
510+ | 306.16 грн |
1020+ | 275.55 грн |
2010+ | 258.2 грн |
IXXH80N65B4H1 |
Виробник: IXYS
Description: IGBT PT 650V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
Description: IGBT PT 650V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 24 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 852.32 грн |
IXXN110N65C4H1 |
Виробник: IXYS
Description: IGBT MOD 650V 210A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
Description: IGBT MOD 650V 210A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
товар відсутній
IXXH110N65C4 |
Виробник: IXYS
Description: IGBT 650V 234A 880W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
Description: IGBT 650V 234A 880W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
товар відсутній
IXXN110N65B4H1 |
Виробник: IXYS
Description: IGBT MOD 650V 215A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
Description: IGBT MOD 650V 215A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
товар відсутній
IXXK110N65B4H1 |
Виробник: IXYS
Description: IGBT 650V 240A 880W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
Description: IGBT 650V 240A 880W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
на замовлення 288 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1089.63 грн |
25+ | 956.98 грн |
IXXX110N65B4H1 |
Виробник: IXYS
Description: IGBT 650V 240A 880W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
Description: IGBT 650V 240A 880W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
товар відсутній
IXXK160N65C4 |
Виробник: IXYS
Description: IGBT 650V 290A 940W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Description: IGBT 650V 290A 940W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
товар відсутній
IXXX160N65C4 |
Виробник: IXYS
Description: IGBT 650V 290A 940W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Description: IGBT 650V 290A 940W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
товар відсутній
IXXK160N65B4 |
Виробник: IXYS
Description: IGBT 650V 310A 940W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
Description: IGBT 650V 310A 940W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1744.32 грн |
IXXX160N65B4 |
Виробник: IXYS
Description: IGBT 650V 310A 940W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
Description: IGBT 650V 310A 940W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
на замовлення 519 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1773.31 грн |
30+ | 1415.46 грн |
120+ | 1327 грн |
510+ | 1062.69 грн |
IXXK200N65B4 |
Виробник: IXYS
Description: IGBT 650V 370A 1150W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
Description: IGBT 650V 370A 1150W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
товар відсутній
IXXX200N65B4 |
Виробник: IXYS
Description: IGBT 650V 370A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
Description: IGBT 650V 370A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
на замовлення 531 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1841.99 грн |
30+ | 1470.57 грн |
120+ | 1378.66 грн |
510+ | 1104.06 грн |
IXBF10N300C |
Виробник: IXYS
Description: IGBT 3000V 29A 240W ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 32ns/390ns
Switching Energy: 7.2mJ (on), 1.04mJ (off)
Test Condition: 1500V, 10A, 10Ohm, 15V
Gate Charge: 208 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 240 W
Description: IGBT 3000V 29A 240W ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 32ns/390ns
Switching Energy: 7.2mJ (on), 1.04mJ (off)
Test Condition: 1500V, 10A, 10Ohm, 15V
Gate Charge: 208 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 240 W
товар відсутній
MMIX1F210N30P3 |
Виробник: IXYS
Description: MOSFET N-CH 300V 108A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Description: MOSFET N-CH 300V 108A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
товар відсутній
IXYH20N65C3 |
Виробник: IXYS
Description: IGBT 650V 50A 230W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
Description: IGBT 650V 50A 230W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
товар відсутній
IXYP15N65C3 |
Виробник: IXYS
Description: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Description: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXYP10N65C3 |
Виробник: IXYS
Description: IGBT 650V 30A 160W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
Description: IGBT 650V 30A 160W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
товар відсутній
IXYH40N90C3D1 |
Виробник: IXYS
Description: IGBT 900V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
Description: IGBT 900V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
на замовлення 923 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 767.62 грн |
30+ | 589.69 грн |
120+ | 527.6 грн |
510+ | 436.89 грн |
IXYK140N90C3 |
Виробник: IXYS
Description: IGBT 900V 310A 1630W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
Description: IGBT 900V 310A 1630W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
на замовлення 582 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2005.28 грн |
25+ | 1600.97 грн |
100+ | 1500.9 грн |
500+ | 1201.95 грн |