Продукція > IXYS > IXTF03N400
IXTF03N400

IXTF03N400 IXYS


DS100117A(IXTF03N400).pdf Виробник: IXYS
Description: MOSFET N-CH 4000V 300MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4000 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IXTF03N400 IXYS

Description: MOSFET N-CH 4000V 300MA I4PAC, Packaging: Tube, Package / Case: i4-Pac™-5 (3 Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ISOPLUS i4-PAC™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 4000 V, Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V.