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MIXA80WB1200TEH IXYS MIXA80WB1200TEH.pdf Description: IGBT MODULE 1200V 120A 390W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 200 µA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+8156.52 грн
MIXA81H1200EH IXYS MIXA81H1200EH.pdf Description: IGBT MODULE 1200V 84A
товар відсутній
MIXA81WB1200TEH IXYS MIXA81WB1200TEH.pdf Description: IGBT MODULE 1200V 84A
товар відсутній
MKE11R600DCGFC IXYS MKE11R600DCGFC.pdf Description: MOSFET N-CH 600V 15A I4PAC
товар відсутній
MKE38P600LB IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MKE38P600LB-TRR IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Description: MOSFET N-CH 600V 50A SMPD
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MKE38RK600DFELB IXYS MKE38RK600DFELB.pdf Description: MOSFET N-CH 600V 50A SMPD
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MKE38RK600DFELB-TRR IXYS MKE38RK600DFELB.pdf Description: MOSFET N-CH 600V 50A SMPD
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MMIX1F132N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 63A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
300+2417.48 грн
Мінімальне замовлення: 300
MMIX1F160N30T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f160n30t_datasheet.pdf.pdf Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
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MMIX1F180N25T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f180n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 132A 24SMPD
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+3768.82 грн
10+ 3385.79 грн
MMIX1F230N20T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 168A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
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MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Description: MOSFET N-CH 1100V 24A SMPD
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MMIX1F420N10T MMIX1F420N10T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f420n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+3435.81 грн
MMIX1G120N120A3V1 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1g120n120a3v1_datasheet.pdf.pdf Description: IGBT 1200V 220A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
товар відсутній
MMIX1T600N04T2 MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 600A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+2662.58 грн
20+ 2278.87 грн
MMIX1X200N60B3 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf Description: IGBT 600V 223A 625W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 223 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 625 W
товар відсутній
MMIX1Y100N120C3H1 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf Description: IGBT 1200V 92A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+3434.29 грн
20+ 2947.02 грн
VUB116-16NOXT VUB116-16NOXT IXYS VUB116-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 120A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 2.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+6478.54 грн
VUB120-16NOX VUB120-16NOX IXYS VUB116-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB120-16NOXT VUB120-16NOXT IXYS VUB120-16NOX.pdf Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB145-16NOXT VUB145-16NOXT IXYS VUB145-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 150A E2
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VUB160-16NOX VUB160-16NOX IXYS VUB160-16NOX.pdf Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
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VUB160-16NOXT VUB160-16NOXT IXYS VUB160-16NOX.pdf Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
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VUB72-12NOXT VUB72-12NOXT IXYS VUB72-12NOXT.pdf Description: BRIDGE RECT 3P 1.2KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+3293.63 грн
10+ 2826.36 грн
VUB72-16NOXT VUB72-16NOXT IXYS VUB72-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+3885.14 грн
10+ 3490.49 грн
VUI72-16NOXT IXYS VUI72-16NOXT.pdf Description: DIODE BRIDGE 1600V 75A
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
1+3750.57 грн
10+ 3369.18 грн
VUO120-12NO2T IXYS VUO120-12NO2T.pdf Description: BRIDGE RECT 3P 1.2KV 180A V2-PAK
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VUO120-16NO2T IXYS VUO120-16NO2T.pdf Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
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VUO162-16NO7 IXYS VUO120-16NO2T.pdf Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
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VUO192-16NO7 IXYS VUO192-16NO7.pdf Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
товар відсутній
VUO52-22NO1 IXYS VUO52-22NO1.pdf Description: BRIDGE RECT 3P 2.2KV 60A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
товар відсутній
VUO64-16NO7 IXYS VUO64-16NO7.pdf Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
VUO84-16NO7 VUO84-16NO7 IXYS VUO84-16NO7.pdf Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+2977.34 грн
10+ 2554.89 грн
VVZB120-16ioX IXYS VVZB120-16ioX.pdf Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB135-16IOXT IXYS VVZB135-16IOXT.pdf Description: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB170-16ioXT IXYS VVZB170-16IOXT.pdf Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
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VWM270-0075X2 IXYS VWM270-0075X2.pdf Description: MOSFET 6N-CH 75V 270A V2-PAK
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IXBT20N300HV IXBT20N300HV IXYS littelfuse_discrete_igbts_bimosfet_ixbt20n300hv_datasheet.pdf.pdf Description: IGBT 3000V 50A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-268AA
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
товар відсутній
IXYP15N65C3D1M IXYP15N65C3D1M IXYS littelfuse_discrete_igbts_xpt_ixyp15n65c3d1m_datasheet.pdf.pdf Description: IGBT 650V 16A 48W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
товар відсутній
IXYP20N65C3D1M IXYP20N65C3D1M IXYS littelfuse_discrete_igbts_xpt_ixyp20n65c3d1m_datasheet.pdf.pdf Description: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
товар відсутній
IXYT30N65C3H1HV IXYT30N65C3H1HV IXYS DS100545A(IXYT-H30N65C3H1_HV).pdf Description: IGBT 650V 60A 270W TO268HV
товар відсутній
IXYH50N65C3 IXYH50N65C3 IXYS littelfuse_discrete_igbts_xpt_ixy_50n65c3_datasheet.pdf.pdf Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXyH100N65C3 IXyH100N65C3 IXYS littelfuse_discrete_igbts_xpt_ixyh100n65c3_datasheet.pdf.pdf Description: IGBT PT 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)
1+653.1 грн
30+ 527.27 грн
IXYN100N65C3H1 IXYN100N65C3H1 IXYS littelfuse_discrete_igbts_xpt_ixyn100n65c3h1_datasheet.pdf.pdf Description: IGBT MOD 650V 166A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 166 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V
товар відсутній
DSI30-12AS-TRL DSI30-12AS-TRL IXYS media?resourcetype=datasheets&itemid=af403ce7-7a1d-4324-8513-6c5e115ae6e5&filename=Littelfuse-Power-Semiconductors-DSI30-12AS-Datasheet Description: DIODE GEN PURP 1.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
на замовлення 5598 шт:
термін постачання 21-31 дні (днів)
2+246.34 грн
10+ 199 грн
100+ 160.98 грн
Мінімальне замовлення: 2
DSI30-16AS-TRL DSI30-16AS-TRL IXYS DSI30-16AS.pdf Description: DIODE GEN PURP 1.6KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+148.62 грн
1600+ 122.55 грн
Мінімальне замовлення: 800
IXYA50N65C3 IXYA50N65C3 IXYS DS100552C(IXYA-P-H50N65C3).pdf Description: IGBT 650V 130A 600W TO263
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
IXYH50N65C3H1 IXYH50N65C3H1 IXYS littelfuse_discrete_igbts_xpt_ixyh50n65c3h1_datasheet.pdf.pdf Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
1+958.74 грн
10+ 646.63 грн
100+ 490.07 грн
500+ 435.37 грн
IXYP50N65C3 IXYP50N65C3 IXYS littelfuse_discrete_igbts_xpt_ixy_50n65c3_datasheet.pdf.pdf Description: IGBT 650V 130A 600W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
CS1710 IXYS Description: THYRISTOR 2200V
товар відсутній
DNA30E2200PZ-TRL DNA30E2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+169.75 грн
Мінімальне замовлення: 800
DNA30EM2200PZ DNA30EM2200PZ IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
DNA30E2200PZ-TRL DNA30E2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 6026 шт:
термін постачання 21-31 дні (днів)
1+363.42 грн
10+ 293.88 грн
100+ 237.73 грн
DNA30EM2200PZ DNA30EM2200PZ IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
на замовлення 1749 шт:
термін постачання 21-31 дні (днів)
DNA30EM2200PZ DNA30EM2200PZ IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
на замовлення 1749 шт:
термін постачання 21-31 дні (днів)
DLA5P800UC DLA5P800UC IXYS DLA5P800UC.pdf Description: DIODE ARRAY GP 800V 5A TO252
товар відсутній
DLA5P800UC DLA5P800UC IXYS DLA5P800UC.pdf Description: DIODE ARRAY GP 800V 5A TO252
товар відсутній
IXYA8N90C3D1 IXYA8N90C3D1 IXYS media?resourcetype=datasheets&itemid=9F345C5A-5DB2-4D23-A956-51BA9B085188&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-8N90C3D1-Datasheet.PDF Description: IGBT 900V 20A 125W C3 TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній
IXYH24N90C3D1 IXYH24N90C3D1 IXYS littelfuse_discrete_igbts_xpt_ixyh24n90c3d1_datasheet.pdf.pdf Description: IGBT 900V 44A 200W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+678.19 грн
MIXA80WB1200TEH MIXA80WB1200TEH.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 120A 390W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 200 µA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8156.52 грн
MIXA81H1200EH MIXA81H1200EH.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 84A
товар відсутній
MIXA81WB1200TEH MIXA81WB1200TEH.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 84A
товар відсутній
MKE11R600DCGFC MKE11R600DCGFC.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 15A I4PAC
товар відсутній
MKE38P600LB SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MKE38P600LB-TRR SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MKE38RK600DFELB MKE38RK600DFELB.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MKE38RK600DFELB-TRR MKE38RK600DFELB.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
товар відсутній
MMIX1F132N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 63A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+2417.48 грн
Мінімальне замовлення: 300
MMIX1F160N30T littelfuse_discrete_mosfets_smpd_packages_mmix1f160n30t_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товар відсутній
MMIX1F180N25T littelfuse_discrete_mosfets_smpd_packages_mmix1f180n25t_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 132A 24SMPD
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3768.82 грн
10+ 3385.79 грн
MMIX1F230N20T littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 200V 168A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
Виробник: IXYS
Description: MOSFET N-CH 1100V 24A SMPD
товар відсутній
MMIX1F420N10T littelfuse_discrete_mosfets_smpd_packages_mmix1f420n10t_datasheet.pdf.pdf
MMIX1F420N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3435.81 грн
MMIX1G120N120A3V1 littelfuse_discrete_igbts_smpd_packages_mmix1g120n120a3v1_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 1200V 220A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
товар відсутній
MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 600A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2662.58 грн
20+ 2278.87 грн
MMIX1X200N60B3 littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 600V 223A 625W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 223 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 625 W
товар відсутній
MMIX1Y100N120C3H1 littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 1200V 92A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3434.29 грн
20+ 2947.02 грн
VUB116-16NOXT VUB116-16NOXT.pdf
VUB116-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 120A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 2.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6478.54 грн
VUB120-16NOX VUB116-16NOXT.pdf
VUB120-16NOX
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB120-16NOXT VUB120-16NOX.pdf
VUB120-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB145-16NOXT VUB145-16NOXT.pdf
VUB145-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 150A E2
товар відсутній
VUB160-16NOX VUB160-16NOX.pdf
VUB160-16NOX
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
товар відсутній
VUB160-16NOXT VUB160-16NOX.pdf
VUB160-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
товар відсутній
VUB72-12NOXT VUB72-12NOXT.pdf
VUB72-12NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3293.63 грн
10+ 2826.36 грн
VUB72-16NOXT VUB72-16NOXT.pdf
VUB72-16NOXT
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3885.14 грн
10+ 3490.49 грн
VUI72-16NOXT VUI72-16NOXT.pdf
Виробник: IXYS
Description: DIODE BRIDGE 1600V 75A
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3750.57 грн
10+ 3369.18 грн
VUO120-12NO2T VUO120-12NO2T.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 180A V2-PAK
товар відсутній
VUO120-16NO2T VUO120-16NO2T.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
товар відсутній
VUO162-16NO7 VUO120-16NO2T.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
товар відсутній
VUO192-16NO7 VUO192-16NO7.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
товар відсутній
VUO52-22NO1 VUO52-22NO1.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 2.2KV 60A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
товар відсутній
VUO64-16NO7 VUO64-16NO7.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
VUO84-16NO7 VUO84-16NO7.pdf
VUO84-16NO7
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2977.34 грн
10+ 2554.89 грн
VVZB120-16ioX VVZB120-16ioX.pdf
Виробник: IXYS
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB135-16IOXT VVZB135-16IOXT.pdf
Виробник: IXYS
Description: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB170-16ioXT VVZB170-16IOXT.pdf
Виробник: IXYS
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
товар відсутній
VWM270-0075X2 VWM270-0075X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 75V 270A V2-PAK
товар відсутній
IXBT20N300HV littelfuse_discrete_igbts_bimosfet_ixbt20n300hv_datasheet.pdf.pdf
IXBT20N300HV
Виробник: IXYS
Description: IGBT 3000V 50A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-268AA
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
товар відсутній
IXYP15N65C3D1M littelfuse_discrete_igbts_xpt_ixyp15n65c3d1m_datasheet.pdf.pdf
IXYP15N65C3D1M
Виробник: IXYS
Description: IGBT 650V 16A 48W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
товар відсутній
IXYP20N65C3D1M littelfuse_discrete_igbts_xpt_ixyp20n65c3d1m_datasheet.pdf.pdf
IXYP20N65C3D1M
Виробник: IXYS
Description: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
товар відсутній
IXYT30N65C3H1HV DS100545A(IXYT-H30N65C3H1_HV).pdf
IXYT30N65C3H1HV
Виробник: IXYS
Description: IGBT 650V 60A 270W TO268HV
товар відсутній
IXYH50N65C3 littelfuse_discrete_igbts_xpt_ixy_50n65c3_datasheet.pdf.pdf
IXYH50N65C3
Виробник: IXYS
Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXyH100N65C3 littelfuse_discrete_igbts_xpt_ixyh100n65c3_datasheet.pdf.pdf
IXyH100N65C3
Виробник: IXYS
Description: IGBT PT 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+653.1 грн
30+ 527.27 грн
IXYN100N65C3H1 littelfuse_discrete_igbts_xpt_ixyn100n65c3h1_datasheet.pdf.pdf
IXYN100N65C3H1
Виробник: IXYS
Description: IGBT MOD 650V 166A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 166 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V
товар відсутній
DSI30-12AS-TRL media?resourcetype=datasheets&itemid=af403ce7-7a1d-4324-8513-6c5e115ae6e5&filename=Littelfuse-Power-Semiconductors-DSI30-12AS-Datasheet
DSI30-12AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
на замовлення 5598 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+246.34 грн
10+ 199 грн
100+ 160.98 грн
Мінімальне замовлення: 2
DSI30-16AS-TRL DSI30-16AS.pdf
DSI30-16AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+148.62 грн
1600+ 122.55 грн
Мінімальне замовлення: 800
IXYA50N65C3 DS100552C(IXYA-P-H50N65C3).pdf
IXYA50N65C3
Виробник: IXYS
Description: IGBT 650V 130A 600W TO263
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
IXYH50N65C3H1 littelfuse_discrete_igbts_xpt_ixyh50n65c3h1_datasheet.pdf.pdf
IXYH50N65C3H1
Виробник: IXYS
Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+958.74 грн
10+ 646.63 грн
100+ 490.07 грн
500+ 435.37 грн
IXYP50N65C3 littelfuse_discrete_igbts_xpt_ixy_50n65c3_datasheet.pdf.pdf
IXYP50N65C3
Виробник: IXYS
Description: IGBT 650V 130A 600W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
CS1710
Виробник: IXYS
Description: THYRISTOR 2200V
товар відсутній
DNA30E2200PZ-TRL media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet
DNA30E2200PZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+169.75 грн
Мінімальне замовлення: 800
DNA30EM2200PZ DNA30EM2200PZ.pdf
DNA30EM2200PZ
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
DNA30E2200PZ-TRL media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet
DNA30E2200PZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 6026 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+363.42 грн
10+ 293.88 грн
100+ 237.73 грн
DNA30EM2200PZ DNA30EM2200PZ.pdf
DNA30EM2200PZ
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
на замовлення 1749 шт:
термін постачання 21-31 дні (днів)
DNA30EM2200PZ DNA30EM2200PZ.pdf
DNA30EM2200PZ
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
на замовлення 1749 шт:
термін постачання 21-31 дні (днів)
DLA5P800UC DLA5P800UC.pdf
DLA5P800UC
Виробник: IXYS
Description: DIODE ARRAY GP 800V 5A TO252
товар відсутній
DLA5P800UC DLA5P800UC.pdf
DLA5P800UC
Виробник: IXYS
Description: DIODE ARRAY GP 800V 5A TO252
товар відсутній
IXYA8N90C3D1 media?resourcetype=datasheets&itemid=9F345C5A-5DB2-4D23-A956-51BA9B085188&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-8N90C3D1-Datasheet.PDF
IXYA8N90C3D1
Виробник: IXYS
Description: IGBT 900V 20A 125W C3 TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній
IXYH24N90C3D1 littelfuse_discrete_igbts_xpt_ixyh24n90c3d1_datasheet.pdf.pdf
IXYH24N90C3D1
Виробник: IXYS
Description: IGBT 900V 44A 200W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+678.19 грн
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