Фото | Назва | Виробник | Інформація |
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MIXA80WB1200TEH | IXYS |
![]() Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A NTC Thermistor: Yes Supplier Device Package: E3 IGBT Type: PT Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 390 W Current - Collector Cutoff (Max): 200 µA |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MIXA81H1200EH | IXYS |
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MIXA81WB1200TEH | IXYS |
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MKE11R600DCGFC | IXYS |
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MKE38P600LB | IXYS |
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MKE38P600LB-TRR | IXYS |
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MKE38RK600DFELB | IXYS |
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MKE38RK600DFELB-TRR | IXYS |
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MMIX1F132N50P3 | IXYS |
![]() Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V |
на замовлення 860 шт: термін постачання 21-31 дні (днів) |
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MMIX1F160N30T | IXYS |
![]() Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V Power Dissipation (Max): 570W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
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MMIX1F180N25T | IXYS |
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на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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MMIX1F230N20T | IXYS |
![]() Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
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MMIX1F40N110P | IXYS |
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MMIX1F420N10T | IXYS |
![]() Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 334A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V Power Dissipation (Max): 680W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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MMIX1G120N120A3V1 | IXYS |
![]() Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 700 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Supplier Device Package: 24-SMPD IGBT Type: PT Td (on/off) @ 25°C: 40ns/490ns Switching Energy: 10mJ (on), 33mJ (off) Test Condition: 960V, 100A, 1Ohm, 15V Gate Charge: 420 nC Part Status: Active Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 700 A Power - Max: 400 W |
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MMIX1T600N04T2 | IXYS |
![]() Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 24-SMPD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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MMIX1X200N60B3 | IXYS |
![]() Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Supplier Device Package: 24-SMPD IGBT Type: PT Td (on/off) @ 25°C: 48ns/160ns Switching Energy: 2.85mJ (on), 2.9mJ (off) Test Condition: 360V, 100A, 1Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 223 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 625 W |
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MMIX1Y100N120C3H1 | IXYS |
![]() Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 420 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Supplier Device Package: 24-SMPD Td (on/off) @ 25°C: 48ns/123ns Switching Energy: 6.5mJ (on), 2.9mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 92 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 440 A Power - Max: 400 W |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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VUB116-16NOXT | IXYS |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Diode Type: Three Phase (Braking) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: Module Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 120 A Voltage - Forward (Vf) (Max) @ If: 2.76 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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VUB120-16NOX | IXYS |
![]() Packaging: Box Package / Case: Module Mounting Type: Through Hole Diode Type: Three Phase (Braking) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: Module Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 180 A Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V |
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VUB120-16NOXT | IXYS |
![]() Packaging: Box Package / Case: Module Mounting Type: Through Hole Diode Type: Three Phase (Braking) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: Module Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 180 A Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V |
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VUB145-16NOXT | IXYS |
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VUB160-16NOX | IXYS |
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VUB160-16NOXT | IXYS |
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VUB72-12NOXT | IXYS |
![]() Packaging: Box Package / Case: V1A-PAK Mounting Type: Chassis Mount Diode Type: Three Phase (Braking) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: V1A-PAK Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 75 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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VUB72-16NOXT | IXYS |
![]() Packaging: Box Package / Case: V1A-PAK Mounting Type: Chassis Mount Diode Type: Three Phase (Braking) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: V1A-PAK Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 75 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1600 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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VUI72-16NOXT | IXYS |
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на замовлення 63 шт: термін постачання 21-31 дні (днів) |
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VUO120-12NO2T | IXYS |
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VUO120-16NO2T | IXYS |
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VUO162-16NO7 | IXYS |
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VUO192-16NO7 | IXYS |
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VUO52-22NO1 | IXYS |
![]() Packaging: Box Package / Case: V1A-PAK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: V1A-PAK Voltage - Peak Reverse (Max): 2.2 kV Current - Average Rectified (Io): 60 A Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
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VUO64-16NO7 | IXYS |
![]() Packaging: Box Package / Case: PWS-D Flat Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: PWS-D-Flat Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 60 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 40 µA @ 1600 V |
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VUO84-16NO7 | IXYS |
![]() Packaging: Box Package / Case: PWS-D Flat Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: PWS-D-Flat Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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VVZB120-16ioX | IXYS |
![]() Packaging: Box Package / Case: V2-PAK Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - Off State: 1.6 kV |
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VVZB135-16IOXT | IXYS |
![]() Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 80 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 1.4 V Voltage - Off State: 1.6 kV |
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VVZB170-16ioXT | IXYS |
![]() Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Voltage - Off State: 1.6 kV |
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VWM270-0075X2 | IXYS |
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IXBT20N300HV | IXYS |
![]() Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.35 µs Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A Supplier Device Package: TO-268AA Gate Charge: 105 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 140 A Power - Max: 250 W |
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IXYP15N65C3D1M | IXYS |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 15ns/68ns Switching Energy: 270µJ (on), 230µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 48 W |
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IXYP20N65C3D1M | IXYS |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 350µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 50 W |
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IXYT30N65C3H1HV | IXYS |
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IXYH50N65C3 | IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 22ns/80ns Switching Energy: 1.3mJ (on), 370µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W |
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IXyH100N65C3 | IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 28ns/106ns Switching Energy: 2.15mJ (on), 840µJ (off) Test Condition: 400V, 50A, 3Ohm, 15V Gate Charge: 164 nC Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 420 A Power - Max: 830 W |
на замовлення 1427 шт: термін постачання 21-31 дні (днів) |
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IXYN100N65C3H1 | IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 166 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 600 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V |
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DSI30-12AS-TRL | IXYS |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 400V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V |
на замовлення 5598 шт: термін постачання 21-31 дні (днів) |
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DSI30-16AS-TRL | IXYS |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 400V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1600 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IXYA50N65C3 | IXYS |
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на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IXYH50N65C3H1 | IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 22ns/80ns Switching Energy: 1.3mJ (on), 370µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W |
на замовлення 970 шт: термін постачання 21-31 дні (днів) |
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IXYP50N65C3 | IXYS |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 22ns/80ns Switching Energy: 1.3mJ (on), 370µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W |
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CS1710 | IXYS | Description: THYRISTOR 2200V |
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DNA30E2200PZ-TRL | IXYS |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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DNA30EM2200PZ | IXYS |
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на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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DNA30E2200PZ-TRL | IXYS |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
на замовлення 6026 шт: термін постачання 21-31 дні (днів) |
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DNA30EM2200PZ | IXYS |
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на замовлення 1749 шт: термін постачання 21-31 дні (днів) |
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DNA30EM2200PZ | IXYS |
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на замовлення 1749 шт: термін постачання 21-31 дні (днів) |
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DLA5P800UC | IXYS |
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товар відсутній |
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DLA5P800UC | IXYS |
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товар відсутній |
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IXYA8N90C3D1 | IXYS |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W |
товар відсутній |
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IXYH24N90C3D1 | IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 340 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/73ns Switching Energy: 1.35mJ (on), 400µJ (off) Test Condition: 450V, 24A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 44 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 105 A Power - Max: 200 W |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MIXA80WB1200TEH |
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Виробник: IXYS
Description: IGBT MODULE 1200V 120A 390W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 200 µA
Description: IGBT MODULE 1200V 120A 390W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 200 µA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8156.52 грн |
MMIX1F132N50P3 |
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Виробник: IXYS
Description: MOSFET N-CH 500V 63A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
Description: MOSFET N-CH 500V 63A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
300+ | 2417.48 грн |
MMIX1F160N30T |
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Виробник: IXYS
Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товар відсутній
MMIX1F180N25T |
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Виробник: IXYS
Description: MOSFET N-CH 250V 132A 24SMPD
Description: MOSFET N-CH 250V 132A 24SMPD
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3768.82 грн |
10+ | 3385.79 грн |
MMIX1F230N20T |
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Виробник: IXYS
Description: MOSFET N-CH 200V 168A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 200V 168A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
MMIX1F420N10T |
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Виробник: IXYS
Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3435.81 грн |
MMIX1G120N120A3V1 |
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Виробник: IXYS
Description: IGBT 1200V 220A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
Description: IGBT 1200V 220A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
товар відсутній
MMIX1T600N04T2 |
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Виробник: IXYS
Description: MOSFET N-CH 40V 600A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Description: MOSFET N-CH 40V 600A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2662.58 грн |
20+ | 2278.87 грн |
MMIX1X200N60B3 |
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Виробник: IXYS
Description: IGBT 600V 223A 625W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 223 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 625 W
Description: IGBT 600V 223A 625W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 223 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 625 W
товар відсутній
MMIX1Y100N120C3H1 |
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Виробник: IXYS
Description: IGBT 1200V 92A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
Description: IGBT 1200V 92A 400W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3434.29 грн |
20+ | 2947.02 грн |
VUB116-16NOXT |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 120A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 2.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 120A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 2.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6478.54 грн |
VUB120-16NOX |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB120-16NOXT |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VUB72-12NOXT |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: BRIDGE RECT 3P 1.2KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3293.63 грн |
10+ | 2826.36 грн |
VUB72-16NOXT |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3885.14 грн |
10+ | 3490.49 грн |
VUI72-16NOXT |
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Виробник: IXYS
Description: DIODE BRIDGE 1600V 75A
Description: DIODE BRIDGE 1600V 75A
на замовлення 63 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3750.57 грн |
10+ | 3369.18 грн |
VUO52-22NO1 |
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Виробник: IXYS
Description: BRIDGE RECT 3P 2.2KV 60A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: BRIDGE RECT 3P 2.2KV 60A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
товар відсутній
VUO64-16NO7 |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
VUO84-16NO7 |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2977.34 грн |
10+ | 2554.89 грн |
VVZB120-16ioX |
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Виробник: IXYS
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB135-16IOXT |
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Виробник: IXYS
Description: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
Description: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
товар відсутній
VVZB170-16ioXT |
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Виробник: IXYS
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
товар відсутній
IXBT20N300HV |
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Виробник: IXYS
Description: IGBT 3000V 50A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-268AA
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
Description: IGBT 3000V 50A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-268AA
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
товар відсутній
IXYP15N65C3D1M |
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Виробник: IXYS
Description: IGBT 650V 16A 48W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
Description: IGBT 650V 16A 48W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
товар відсутній
IXYP20N65C3D1M |
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Виробник: IXYS
Description: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
Description: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
товар відсутній
IXYH50N65C3 |
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Виробник: IXYS
Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXyH100N65C3 |
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Виробник: IXYS
Description: IGBT PT 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
Description: IGBT PT 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
на замовлення 1427 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 653.1 грн |
30+ | 527.27 грн |
IXYN100N65C3H1 |
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Виробник: IXYS
Description: IGBT MOD 650V 166A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 166 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V
Description: IGBT MOD 650V 166A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 166 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V
товар відсутній
DSI30-12AS-TRL |
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Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
на замовлення 5598 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 246.34 грн |
10+ | 199 грн |
100+ | 160.98 грн |
DSI30-16AS-TRL |
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Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 148.62 грн |
1600+ | 122.55 грн |
IXYA50N65C3 |
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Виробник: IXYS
Description: IGBT 650V 130A 600W TO263
Description: IGBT 650V 130A 600W TO263
на замовлення 750 шт:
термін постачання 21-31 дні (днів)IXYH50N65C3H1 |
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Виробник: IXYS
Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
на замовлення 970 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 958.74 грн |
10+ | 646.63 грн |
100+ | 490.07 грн |
500+ | 435.37 грн |
IXYP50N65C3 |
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Виробник: IXYS
Description: IGBT 650V 130A 600W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
Description: IGBT 650V 130A 600W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
DNA30E2200PZ-TRL |
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Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 169.75 грн |
DNA30EM2200PZ |
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Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Description: DIODE GEN PURP 2.2KV 30A TO263
на замовлення 800 шт:
термін постачання 21-31 дні (днів)DNA30E2200PZ-TRL |
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Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 6026 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 363.42 грн |
10+ | 293.88 грн |
100+ | 237.73 грн |
DNA30EM2200PZ |
![]() |
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Description: DIODE GEN PURP 2.2KV 30A TO263
на замовлення 1749 шт:
термін постачання 21-31 дні (днів)DNA30EM2200PZ |
![]() |
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Description: DIODE GEN PURP 2.2KV 30A TO263
на замовлення 1749 шт:
термін постачання 21-31 дні (днів)IXYA8N90C3D1 |
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Виробник: IXYS
Description: IGBT 900V 20A 125W C3 TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Description: IGBT 900V 20A 125W C3 TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній
IXYH24N90C3D1 |
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Виробник: IXYS
Description: IGBT 900V 44A 200W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
Description: IGBT 900V 44A 200W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 678.19 грн |