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IXFX74N50P2 IXFX74N50P2 IXYS DS100252A(IXFK-FX74N50P2).pdf Description: MOSFET N-CH 500V 74A PLUS247-3
товар відсутній
IXFK94N50P2 IXFK94N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 94A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+1604.85 грн
IXFX94N50P2 IXFX94N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 94A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+1574.77 грн
10+ 1347.06 грн
IXFB120N50P2 IXFB120N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb120n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 120A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
FMM110-015X2F IXYS DS100145-(FMM110-015X2F).pdf Description: MOSFET 2N-CH 150V 53A I4-PAC
товар відсутній
FMM22-05PF IXYS Description: MOSFET 2N-CH 500V 13A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 132W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товар відсутній
FMM22-06PF IXYS Description: MOSFET 2N-CH 600V 12A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 130W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товар відсутній
FMM50-025TF IXYS DS100040A-(FMM50-025TF).pdf Description: MOSFET 2N-CH 250V 30A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMM60-02TF IXYS DS100048-(FMM60-02TF).pdf Description: MOSFET 2N-CH 200V 33A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 33A
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMP26-02P FMP26-02P IXYS DS100033A(FMP26-02P).pdf Description: MOSFET N/P-CH 200V 26A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 26A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMP36-015P IXYS DS100034-(FMP36-015P).pdf Description: MOSFET N/P-CH 150V 36A/22A I4PAC
товар відсутній
FMP76-010T IXYS DS100037-(FMP76-010T).pdf Description: MOSFET N/P-CH 100V 62A/54A I4PAC
товар відсутній
IXBH24N170 IXBH24N170 IXYS littelfuse_discrete_igbts_bimosfet_ixb_24n170_datasheet.pdf.pdf Description: IGBT 1700V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
1+999.46 грн
30+ 877.71 грн
IXBK75N170 IXBK75N170 IXYS littelfuse_discrete_igbts_bimosfet_ixb_75n170_datasheet.pdf.pdf Description: IGBT 1700V 200A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: TO-264AA
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
1+3521.04 грн
25+ 2841.47 грн
IXBK75N170A IXBK75N170A IXYS DS100166A(IXBK-BX75N170A).pdf Description: IGBT 1700V 110A 1040W TO264
товар відсутній
IXBN75N170 IXBN75N170 IXYS littelfuse_discrete_igbts_bimosfet_ixbn75n170_datasheet.pdf.pdf Description: IGBT MOD 1700V 145A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6.93 nF @ 25 V
товар відсутній
IXBX75N170 IXBX75N170 IXYS littelfuse_discrete_igbts_bimosfet_ixb_75n170_datasheet.pdf.pdf Description: IGBT 1700V 200A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: PLUS247™-3
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+4383.63 грн
30+ 3710 грн
IXBX75N170A IXBX75N170A IXYS littelfuse_discrete_igbts_bimosfet_ixbx75n170a_datasheet.pdf.pdf Description: IGBT 1700V 110A 1040W PLUS247
товар відсутній
IXFA110N15T2-TRL IXFA110N15T2-TRL IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf Description: MOSFET N-CH 150V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
IXFH230N10T IXFH230N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh230n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 230A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 500mA, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
1+651.26 грн
30+ 500.58 грн
120+ 447.89 грн
510+ 370.88 грн
IXFH340N075T2 IXFH340N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 340A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
1+761.06 грн
10+ 673.85 грн
IXFH400N075T2 IXFH400N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_400n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 400A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
товар відсутній
IXFP6N120P IXFP6N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+690.37 грн
IXFT340N075T2 IXFT340N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 340A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
1+970.88 грн
10+ 859.68 грн
100+ 726.05 грн
IXFT86N30T IXFT86N30T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_86n30t_datasheet.pdf.pdf Description: MOSFET N-CH 300V 86A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
товар відсутній
IXFT88N30P IXFT88N30P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_88n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 88A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
30+827.97 грн
Мінімальне замовлення: 30
IXFX420N10T IXFX420N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_420n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 420A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V
товар відсутній
IXGH30N60C3D1 IXGH30N60C3D1 IXYS littelfuse_discrete_igbts_pt_ixg_30n60c3d1_datasheet.pdf.pdf Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
на замовлення 2321 шт:
термін постачання 21-31 дні (днів)
1+463.26 грн
30+ 356.61 грн
120+ 319.08 грн
510+ 264.22 грн
1020+ 237.8 грн
2010+ 222.82 грн
IXGK120N120B3 IXGK120N120B3 IXYS littelfuse_discrete_igbts_pt_ixg_120n120b3_datasheet.pdf.pdf Description: IGBT 1200V 200A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
300+1826.38 грн
Мінімальне замовлення: 300
IXGK50N120C3H1 IXGK50N120C3H1 IXYS littelfuse_discrete_igbts_pt_ixg_50n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 95A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
товар відсутній
IXGK64N60B3D1 IXGK64N60B3D1 IXYS littelfuse_discrete_igbts_pt_ixg_64n60b3d1_datasheet.pdf.pdf Description: IGBT 600V 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGK72N60A3H1 IXGK72N60A3H1 IXYS littelfuse_discrete_igbts_pt_ixg_72n60a3h1_datasheet.pdf.pdf Description: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
IXGK72N60B3H1 IXGK72N60B3H1 IXYS littelfuse_discrete_igbts_pt_ixg_72n60b3h1_datasheet.pdf.pdf Description: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 540 W
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
300+881.85 грн
Мінімальне замовлення: 300
IXGK72N60C3H1 IXGK72N60C3H1 IXYS Description: IGBT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXGK)
Part Status: Active
товар відсутній
IXGN100N170 IXGN100N170 IXYS littelfuse_discrete_igbts_npt_ixgn100n170_datasheet.pdf.pdf Description: IGBT MOD 1700V 160A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.22 nF @ 25 V
на замовлення 231 шт:
термін постачання 21-31 дні (днів)
1+3857.2 грн
10+ 3376.95 грн
100+ 3039.25 грн
IXGN82N120C3H1 IXGN82N120C3H1 IXYS littelfuse_discrete_igbts_pt_ixgn82n120c3h1_datasheet.pdf.pdf Description: IGBT MOD 1200V 130A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
товар відсутній
IXGP48N60C3 IXGP48N60C3 IXYS littelfuse_discrete_igbts_pt_ixg_48n60c3_datasheet.pdf.pdf Description: IGBT 600V 75A 300W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGR50N160H1 IXGR50N160H1 IXYS Description: IGBT 1600V 75A 240W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: NPT
Gate Charge: 137 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 330 A
Power - Max: 240 W
товар відсутній
IXGR72N60A3H1 IXGR72N60A3H1 IXYS littelfuse_discrete_igbts_pt_ixgr72n60a3h1_datasheet.pdf.pdf Description: IGBT 600V 75A 200W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 60A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 200 W
товар відсутній
IXGT72N60A3 IXGT72N60A3 IXYS littelfuse_discrete_igbts_pt_ixg_72n60a3_datasheet.pdf.pdf Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
на замовлення 881 шт:
термін постачання 21-31 дні (днів)
1+982.16 грн
30+ 766.04 грн
120+ 720.97 грн
510+ 613.17 грн
IXGX100N160A IXGX100N160A IXYS Description: IGBT TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
товар відсутній
IXGX100N170 IXGX100N170 IXYS littelfuse_discrete_igbts_npt_ixgn100n170_datasheet.pdf.pdf Description: IGBT 1700V 170A 830W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: NPT
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
товар відсутній
IXGX50N120C3H1 IXGX50N120C3H1 IXYS littelfuse_discrete_igbts_pt_ixg_50n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 95A 460W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
товар відсутній
IXGX55N120A3D1 IXGX55N120A3D1 IXYS Description: IGBT PLUS247
товар відсутній
IXGX72N60A3H1 IXGX72N60A3H1 IXYS littelfuse_discrete_igbts_pt_ixg_72n60a3h1_datasheet.pdf.pdf Description: IGBT 600V 75A 540W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
IXSK50N60AU1 IXSK50N60AU1 IXYS IXSK50N60AU1.pdf Description: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 70ns/200ns
Switching Energy: 6mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXTA160N04T2 IXTA160N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_160n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
300+152.29 грн
Мінімальне замовлення: 300
IXTH360N055T2 IXTH360N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_360n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 360A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
300+548.04 грн
Мінімальне замовлення: 300
IXTH440N055T2 IXTH440N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_440n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 440A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
товар відсутній
IXTH500N04T2 IXTH500N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 500A TO247
товар відсутній
IXTH60N20L2 IXTH60N20L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_60n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+1348.4 грн
IXTK550N055T2 IXTK550N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_550n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 550A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товар відсутній
IXTK600N04T2 IXTK600N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_600n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 600A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
300+1157.69 грн
Мінімальне замовлення: 300
IXTN200N10T IXTN200N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn200n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 200A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+3017.93 грн
IXTN550N055T2 IXTN550N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn550n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 550A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товар відсутній
IXTQ50N25T IXTQ50N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_50n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 234 шт:
термін постачання 21-31 дні (днів)
1+434.68 грн
30+ 334.38 грн
120+ 299.18 грн
IXTQ60N20L2 IXTQ60N20L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_60n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+1293.51 грн
30+ 1008.62 грн
120+ 949.3 грн
510+ 807.36 грн
IXTT360N055T2 IXTT360N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_360n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 360A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXTT60N20L2 IXTT60N20L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_60n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
товар відсутній
IXTT75N10L2 IXTT75N10L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_75n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 75A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+1285.23 грн
IXFX74N50P2 DS100252A(IXFK-FX74N50P2).pdf
IXFX74N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 74A PLUS247-3
товар відсутній
IXFK94N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf
IXFK94N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 94A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1604.85 грн
IXFX94N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf
IXFX94N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 94A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1574.77 грн
10+ 1347.06 грн
IXFB120N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb120n50p2_datasheet.pdf.pdf
IXFB120N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 120A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
FMM110-015X2F DS100145-(FMM110-015X2F).pdf
Виробник: IXYS
Description: MOSFET 2N-CH 150V 53A I4-PAC
товар відсутній
FMM22-05PF
Виробник: IXYS
Description: MOSFET 2N-CH 500V 13A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 132W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товар відсутній
FMM22-06PF
Виробник: IXYS
Description: MOSFET 2N-CH 600V 12A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 130W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товар відсутній
FMM50-025TF DS100040A-(FMM50-025TF).pdf
Виробник: IXYS
Description: MOSFET 2N-CH 250V 30A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMM60-02TF DS100048-(FMM60-02TF).pdf
Виробник: IXYS
Description: MOSFET 2N-CH 200V 33A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 33A
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMP26-02P DS100033A(FMP26-02P).pdf
FMP26-02P
Виробник: IXYS
Description: MOSFET N/P-CH 200V 26A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 26A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMP36-015P DS100034-(FMP36-015P).pdf
Виробник: IXYS
Description: MOSFET N/P-CH 150V 36A/22A I4PAC
товар відсутній
FMP76-010T DS100037-(FMP76-010T).pdf
Виробник: IXYS
Description: MOSFET N/P-CH 100V 62A/54A I4PAC
товар відсутній
IXBH24N170 littelfuse_discrete_igbts_bimosfet_ixb_24n170_datasheet.pdf.pdf
IXBH24N170
Виробник: IXYS
Description: IGBT 1700V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+999.46 грн
30+ 877.71 грн
IXBK75N170 littelfuse_discrete_igbts_bimosfet_ixb_75n170_datasheet.pdf.pdf
IXBK75N170
Виробник: IXYS
Description: IGBT 1700V 200A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: TO-264AA
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3521.04 грн
25+ 2841.47 грн
IXBK75N170A DS100166A(IXBK-BX75N170A).pdf
IXBK75N170A
Виробник: IXYS
Description: IGBT 1700V 110A 1040W TO264
товар відсутній
IXBN75N170 littelfuse_discrete_igbts_bimosfet_ixbn75n170_datasheet.pdf.pdf
IXBN75N170
Виробник: IXYS
Description: IGBT MOD 1700V 145A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6.93 nF @ 25 V
товар відсутній
IXBX75N170 littelfuse_discrete_igbts_bimosfet_ixb_75n170_datasheet.pdf.pdf
IXBX75N170
Виробник: IXYS
Description: IGBT 1700V 200A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: PLUS247™-3
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4383.63 грн
30+ 3710 грн
IXBX75N170A littelfuse_discrete_igbts_bimosfet_ixbx75n170a_datasheet.pdf.pdf
IXBX75N170A
Виробник: IXYS
Description: IGBT 1700V 110A 1040W PLUS247
товар відсутній
IXFA110N15T2-TRL littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf
IXFA110N15T2-TRL
Виробник: IXYS
Description: MOSFET N-CH 150V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
IXFH230N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh230n10t_datasheet.pdf.pdf
IXFH230N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 230A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 500mA, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+651.26 грн
30+ 500.58 грн
120+ 447.89 грн
510+ 370.88 грн
IXFH340N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf
IXFH340N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 340A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+761.06 грн
10+ 673.85 грн
IXFH400N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_400n075t2_datasheet.pdf.pdf
IXFH400N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 400A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
товар відсутній
IXFP6N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf
IXFP6N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+690.37 грн
IXFT340N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf
IXFT340N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 340A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+970.88 грн
10+ 859.68 грн
100+ 726.05 грн
IXFT86N30T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_86n30t_datasheet.pdf.pdf
IXFT86N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 86A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
товар відсутній
IXFT88N30P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_88n30p_datasheet.pdf.pdf
IXFT88N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 88A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
30+827.97 грн
Мінімальне замовлення: 30
IXFX420N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_420n10t_datasheet.pdf.pdf
IXFX420N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 420A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V
товар відсутній
IXGH30N60C3D1 littelfuse_discrete_igbts_pt_ixg_30n60c3d1_datasheet.pdf.pdf
IXGH30N60C3D1
Виробник: IXYS
Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
на замовлення 2321 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+463.26 грн
30+ 356.61 грн
120+ 319.08 грн
510+ 264.22 грн
1020+ 237.8 грн
2010+ 222.82 грн
IXGK120N120B3 littelfuse_discrete_igbts_pt_ixg_120n120b3_datasheet.pdf.pdf
IXGK120N120B3
Виробник: IXYS
Description: IGBT 1200V 200A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+1826.38 грн
Мінімальне замовлення: 300
IXGK50N120C3H1 littelfuse_discrete_igbts_pt_ixg_50n120c3h1_datasheet.pdf.pdf
IXGK50N120C3H1
Виробник: IXYS
Description: IGBT 1200V 95A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
товар відсутній
IXGK64N60B3D1 littelfuse_discrete_igbts_pt_ixg_64n60b3d1_datasheet.pdf.pdf
IXGK64N60B3D1
Виробник: IXYS
Description: IGBT 600V 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGK72N60A3H1 littelfuse_discrete_igbts_pt_ixg_72n60a3h1_datasheet.pdf.pdf
IXGK72N60A3H1
Виробник: IXYS
Description: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
IXGK72N60B3H1 littelfuse_discrete_igbts_pt_ixg_72n60b3h1_datasheet.pdf.pdf
IXGK72N60B3H1
Виробник: IXYS
Description: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 540 W
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+881.85 грн
Мінімальне замовлення: 300
IXGK72N60C3H1
IXGK72N60C3H1
Виробник: IXYS
Description: IGBT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXGK)
Part Status: Active
товар відсутній
IXGN100N170 littelfuse_discrete_igbts_npt_ixgn100n170_datasheet.pdf.pdf
IXGN100N170
Виробник: IXYS
Description: IGBT MOD 1700V 160A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.22 nF @ 25 V
на замовлення 231 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3857.2 грн
10+ 3376.95 грн
100+ 3039.25 грн
IXGN82N120C3H1 littelfuse_discrete_igbts_pt_ixgn82n120c3h1_datasheet.pdf.pdf
IXGN82N120C3H1
Виробник: IXYS
Description: IGBT MOD 1200V 130A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
товар відсутній
IXGP48N60C3 littelfuse_discrete_igbts_pt_ixg_48n60c3_datasheet.pdf.pdf
IXGP48N60C3
Виробник: IXYS
Description: IGBT 600V 75A 300W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGR50N160H1
IXGR50N160H1
Виробник: IXYS
Description: IGBT 1600V 75A 240W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: NPT
Gate Charge: 137 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 330 A
Power - Max: 240 W
товар відсутній
IXGR72N60A3H1 littelfuse_discrete_igbts_pt_ixgr72n60a3h1_datasheet.pdf.pdf
IXGR72N60A3H1
Виробник: IXYS
Description: IGBT 600V 75A 200W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 60A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 200 W
товар відсутній
IXGT72N60A3 littelfuse_discrete_igbts_pt_ixg_72n60a3_datasheet.pdf.pdf
IXGT72N60A3
Виробник: IXYS
Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
на замовлення 881 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+982.16 грн
30+ 766.04 грн
120+ 720.97 грн
510+ 613.17 грн
IXGX100N160A
IXGX100N160A
Виробник: IXYS
Description: IGBT TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
товар відсутній
IXGX100N170 littelfuse_discrete_igbts_npt_ixgn100n170_datasheet.pdf.pdf
IXGX100N170
Виробник: IXYS
Description: IGBT 1700V 170A 830W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: NPT
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
товар відсутній
IXGX50N120C3H1 littelfuse_discrete_igbts_pt_ixg_50n120c3h1_datasheet.pdf.pdf
IXGX50N120C3H1
Виробник: IXYS
Description: IGBT 1200V 95A 460W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
товар відсутній
IXGX55N120A3D1
IXGX55N120A3D1
Виробник: IXYS
Description: IGBT PLUS247
товар відсутній
IXGX72N60A3H1 littelfuse_discrete_igbts_pt_ixg_72n60a3h1_datasheet.pdf.pdf
IXGX72N60A3H1
Виробник: IXYS
Description: IGBT 600V 75A 540W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
IXSK50N60AU1 IXSK50N60AU1.pdf
IXSK50N60AU1
Виробник: IXYS
Description: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 70ns/200ns
Switching Energy: 6mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXTA160N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_160n04t2_datasheet.pdf.pdf
IXTA160N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+152.29 грн
Мінімальне замовлення: 300
IXTH360N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_360n055t2_datasheet.pdf.pdf
IXTH360N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 360A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+548.04 грн
Мінімальне замовлення: 300
IXTH440N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_440n055t2_datasheet.pdf.pdf
IXTH440N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 440A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
товар відсутній
IXTH500N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf
IXTH500N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 500A TO247
товар відсутній
IXTH60N20L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_60n20_datasheet.pdf.pdf
IXTH60N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1348.4 грн
IXTK550N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_550n055t2_datasheet.pdf.pdf
IXTK550N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 550A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товар відсутній
IXTK600N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_600n04t2_datasheet.pdf.pdf
IXTK600N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 600A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+1157.69 грн
Мінімальне замовлення: 300
IXTN200N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn200n10t_datasheet.pdf.pdf
IXTN200N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 200A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3017.93 грн
IXTN550N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn550n055t2_datasheet.pdf.pdf
IXTN550N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 550A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товар відсутній
IXTQ50N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_50n25t_datasheet.pdf.pdf
IXTQ50N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 234 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+434.68 грн
30+ 334.38 грн
120+ 299.18 грн
IXTQ60N20L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_60n20_datasheet.pdf.pdf
IXTQ60N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1293.51 грн
30+ 1008.62 грн
120+ 949.3 грн
510+ 807.36 грн
IXTT360N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_360n055t2_datasheet.pdf.pdf
IXTT360N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 360A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXTT60N20L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_60n20_datasheet.pdf.pdf
IXTT60N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
товар відсутній
IXTT75N10L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_75n10_datasheet.pdf.pdf
IXTT75N10L2
Виробник: IXYS
Description: MOSFET N-CH 100V 75A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1285.23 грн
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