Продукція > IXYS > Всі товари виробника IXYS (19931) > Сторінка 73 з 333

Обрати Сторінку:    << Попередня Сторінка ]  1 33 66 68 69 70 71 72 73 74 75 76 77 78 99 132 165 198 231 264 297 330 333  Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
IXYH80N90C3 IXYH80N90C3 IXYS littelfuse_discrete_igbts_xpt_ixy_80n90c3_datasheet.pdf.pdf Description: IGBT 900V 165A 830W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
товар відсутній
IXTA44P15TTRL IXTA44P15TTRL IXYS DS100023B(IXTA-TH-TQ-TP44P15T).pdf Description: MOSFET P-CH 150V 44A TO-263
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
IXTY12N06TTRL IXTY12N06TTRL IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtu12n06t_datasheet.pdf.pdf Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXTY12N06TTRL IXTY12N06TTRL IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtu12n06t_datasheet.pdf.pdf Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
CLA100PD1200NA CLA100PD1200NA IXYS media?resourcetype=datasheets&itemid=3c99ebf3-0787-4f96-8215-5f6801302969&filename=Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
товар відсутній
CLA110MB1200NA CLA110MB1200NA IXYS CLA110MB1200NA.pdf Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 110 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+1909.9 грн
CLA30E1200HB CLA30E1200HB IXYS CLA30E1200HB.pdf Description: SCR 1.2KV 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.56 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247AD
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
товар відсутній
C0E1200PBLA3 C0E1200PBLA3 IXYS CLA30E1200PB.pdf Description: SCR 1.2KV 47A TO220AB
товар відсутній
CLA30E1200PC CLA30E1200PC IXYS CLA30E1200PC.pdf Description: THYRISTOR PHASE 1200V TO-263
товар відсутній
CLA40P1200FC CLA40P1200FC IXYS CLA40P1200FC.pdf Description: MOD THYRISTOR DUAL 1200V I4-PAC
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+985.09 грн
10+ 871.45 грн
CLA5E1200UC CLA5E1200UC IXYS CLA5E1200UC.pdf Description: THYRISTOR PHASE 1200V TO-252
товар відсутній
CLA60MT1200NHB CLA60MT1200NHB IXYS CLA60MT1200NHB.pdf Description: TRIAC 1.2KV 66A TO-247
товар відсутній
CLA60MT1200NTZ-TUB CLA60MT1200NTZ-TUB IXYS CLA60MT1200NTZ.pdf Description: TRIAC 1.2KV 66A TO-268AA
товар відсутній
CLA60PD1200NA CLA60PD1200NA IXYS media?resourcetype=datasheets&itemid=2f0b1188-ebcf-43a4-97aa-f3cb8f1ddcdc&filename=Littelfuse-Power-Semiconductors-CLA60PD1200NA-Datasheet Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 94 A
Voltage - Off State: 1.2 kV
на замовлення 139 шт:
термін постачання 21-31 дні (днів)
1+2218.17 грн
10+ 1898.31 грн
100+ 1660.31 грн
CLA80E1200HF CLA80E1200HF IXYS CLA80E1200HF.pdf Description: SCR 1.2KV 126A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 38 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.77 V
Current - Off State (Max): 50 µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.2 kV
на замовлення 3150 шт:
термін постачання 21-31 дні (днів)
1+665.37 грн
30+ 511.11 грн
120+ 457.3 грн
510+ 378.67 грн
1020+ 340.8 грн
CMA30P1600FC IXYS CMA30P1600FC.pdf Description: MOD THYRISTOR DUAL 1600V I4-PAC
товар відсутній
CMA50P1600FC CMA50P1600FC IXYS media?resourcetype=datasheets&itemid=217761c4-28ee-4a8f-acc4-895ff6c1f343&filename=Littelfuse-Power-Semiconductors-CMA50P1600FC-Datasheet Description: MOD THYRISTOR DUAL 1600V I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+828.67 грн
25+ 669.36 грн
CMA80PD1600NA CMA80PD1600NA IXYS CMA80PD1600NA.pdf Description: MOD THYRISTOR DUAL 1600V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
товар відсутній
CS20-25MOT1 CS20-25MOT1 IXYS CS20-25moT1.pdf Description: THYRISTOR PHASE 2500V TO-263AA
товар відсутній
DH2x60-18A DH2x60-18A IXYS DH2x60-18A.pdf Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
товар відсутній
DH2x61-16A IXYS DH2x61-16A.pdf Description: DIODE MODULE 1.6KV 60A SOT227B
товар відсутній
DH60-14A DH60-14A IXYS DH60-14A.pdf Description: DIODE GEN PURP 1.4KV 60A TO247AD
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+858.42 грн
10+ 747.35 грн
DH60-16A DH60-16A IXYS DH60-14A.pdf Description: DIODE GEN PURP 1.6KV 60A TO247AD
товар відсутній
DHG10I1800PA DHG10I1800PA IXYS DHG10I1800PA.pdf Description: DIODE GEN PURP 1.8KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
товар відсутній
DLA100B1200LB IXYS DLA100B1200LB.pdf Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
товар відсутній
DLA100B1200LB-TRR IXYS DLA100B1200LB.pdf Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
товар відсутній
DLA20IM800PC-TUB DLA20IM800PC-TUB IXYS DLA20IM800PC.pdf Description: DIODE GEN PURP 800V 20A TO263
товар відсутній
DLA40IM800PC DLA40IM800PC IXYS DLA40IM800PC.pdf Description: DIODE GEN PURP 800V 40A TO263
товар відсутній
DLA5P800UC DLA5P800UC IXYS DLA5P800UC.pdf Description: DIODE ARRAY GP 800V 5A TO252
товар відсутній
DLA60I1200HA DLA60I1200HA IXYS DLA60I1200HA.pdf Description: DIODE GEN PURP 1.2KV 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
товар відсутній
DMA10I1600PA DMA10I1600PA IXYS media?resourcetype=datasheets&itemid=2b155cff-031c-4638-8388-a50ff2b97f25&filename=Littelfuse-Power-Semiconductors-DMA10I1600PA-Datasheet Description: DIODE GEN PURP 1.6KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
3+135.06 грн
50+ 104.49 грн
100+ 85.96 грн
Мінімальне замовлення: 3
DMA150E1600NA DMA150E1600NA IXYS DMA150E1600NA.pdf Description: DIODE GP 1.6KV 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 400V, 1MHz
Current - Average Rectified (Io): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
DMA150YA1600NA DMA150YA1600NA IXYS DMA150YA1600NA.pdf Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+2379.17 грн
10+ 2035.49 грн
100+ 1780.34 грн
DMA150YC1600NA DMA150YC1600NA IXYS DMA150YC1600NA.pdf Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 397 шт:
термін постачання 21-31 дні (днів)
1+2372.3 грн
10+ 2030.13 грн
100+ 1775.63 грн
DMA30E1800HA IXYS DMA30E1800HA.pdf Description: DIODE GEN PURP 1800V 30A TO247
товар відсутній
DMA90U1800LB IXYS DMA90U1800LB.pdf Description: DIODE RECTIFER TRIPLE 1800V SMPD
товар відсутній
DNA30E2200FE IXYS media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet Description: DIODE GEN PURP 2.2KV 30A I4-PAC
Packaging: Tube
Package / Case: TO-251-2, IPAK
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: i4-PAC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
1+633.33 грн
25+ 486.48 грн
100+ 435.27 грн
DNA30E2200PA DNA30E2200PA IXYS media?resourcetype=datasheets&itemid=42adbfd3-2825-42ce-8fe6-b73bb77fbe1c&filename=Littelfuse-Power-Semiconductors-DNA30E2200PA-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 612 шт:
термін постачання 21-31 дні (днів)
1+320.48 грн
50+ 244.84 грн
100+ 209.86 грн
500+ 175.06 грн
DNA30E2200PC DNA30E2200PC IXYS DNA30E2200PC.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
товар відсутній
DNA30E2200PC-TUB DNA30E2200PC-TUB IXYS DNA30E2200PC.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
товар відсутній
DNA30EM2200PC DNA30EM2200PC IXYS Rectifier%20diodes%20ad.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
товар відсутній
DPF30I300PA DPF30I300PA IXYS DPF30I300PA.pdf Description: DIODE GEN PURP 300V 30A TO220AC
товар відсутній
DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Description: DIODE ARRAY GP 300V 30A TO247AD
товар відсутній
DPF80C200HB DPF80C200HB IXYS DPF80C200HB.pdf Description: DIODE ARRAY GP 200V 40A TO247AD
товар відсутній
DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Description: DIODE ARRAY 400V 10A ISOPLUS220
товар відсутній
DPG20C400PC DPG20C400PC IXYS DPG20C400PC.pdf Description: DIODE ARRAY GP 400V 10A TO263
товар відсутній
DPG30I400HA DPG30I400HA IXYS DPG30I400HA.pdf Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
DPG30IM300PC DPG30IM300PC IXYS DPG30IM300PC.pdf Description: DIODE GEN PURP 300V 30A TO263
товар відсутній
DPG30P300PJ DPG30P300PJ IXYS DPG30P300PJ.pdf Description: DIODE ARRAY 300V 30A ISOPLUS220
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+399.07 грн
10+ 345.27 грн
DPG80C300HB DPG80C300HB IXYS DPG80C300HB.pdf Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
1+566.18 грн
10+ 492.6 грн
100+ 407.83 грн
500+ 333.28 грн
1000+ 313.14 грн
DPG80C400HB DPG80C400HB IXYS DPG80C400HB.pdf Description: DIODE ARRAY GP 400V 40A TO247AD
товар відсутній
DSA10C150PB DSA10C150PB IXYS DSA10C150PB.pdf Description: DIODE ARRAY SCHOTTKY 150V TO220
товар відсутній
DSA120X150LB IXYS DSA120X150LB.pdf Description: DIODE ARRAY SCHOTTKY 150V SMPD
товар відсутній
DSA120X150LB-TRR DSA120X150LB-TRR IXYS DSA120X150LB.pdf Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
DSA15IM200UC DSA15IM200UC IXYS DSA15IM200UC.pdf Description: DIODE SCHOTTKY 200V 15A TO252
товар відсутній
DSA240X150NA DSA240X150NA IXYS media?resourcetype=datasheets&itemid=34D8D74B-7E13-48DA-859A-692F9F387798&filename=Littelfuse-Power-Semiconductors-DSA240X150NA-Datasheet Description: DIODE MOD SCHOTT 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
товар відсутній
DSA240X200NA DSA240X200NA IXYS DSA240X200NA.pdf Description: DIODE MOD SCHOTT 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
товар відсутній
DSA300I100NA DSA300I100NA IXYS DSA300I100NA.pdf Description: DIODE SCHOTTKY 100V 300A SOT227B
товар відсутній
DSA300I200NA DSA300I200NA IXYS DSA300I200NA.pdf Description: DIODE SCHOTTKY 200V 300A SOT227B
товар відсутній
DSA300I45NA DSA300I45NA IXYS DSA300I45NA.pdf Description: DIODE SCHOTTKY 45V 300A SOT227B
товар відсутній
IXYH80N90C3 littelfuse_discrete_igbts_xpt_ixy_80n90c3_datasheet.pdf.pdf
IXYH80N90C3
Виробник: IXYS
Description: IGBT 900V 165A 830W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
товар відсутній
IXTA44P15TTRL DS100023B(IXTA-TH-TQ-TP44P15T).pdf
IXTA44P15TTRL
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO-263
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
IXTY12N06TTRL littelfuse_discrete_mosfets_n-channel_trench_gate_ixtu12n06t_datasheet.pdf.pdf
IXTY12N06TTRL
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXTY12N06TTRL littelfuse_discrete_mosfets_n-channel_trench_gate_ixtu12n06t_datasheet.pdf.pdf
IXTY12N06TTRL
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
CLA100PD1200NA media?resourcetype=datasheets&itemid=3c99ebf3-0787-4f96-8215-5f6801302969&filename=Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet
CLA100PD1200NA
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
товар відсутній
CLA110MB1200NA CLA110MB1200NA.pdf
CLA110MB1200NA
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 110 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1909.9 грн
CLA30E1200HB CLA30E1200HB.pdf
CLA30E1200HB
Виробник: IXYS
Description: SCR 1.2KV 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.56 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247AD
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
товар відсутній
C0E1200PBLA3 CLA30E1200PB.pdf
C0E1200PBLA3
Виробник: IXYS
Description: SCR 1.2KV 47A TO220AB
товар відсутній
CLA30E1200PC CLA30E1200PC.pdf
CLA30E1200PC
Виробник: IXYS
Description: THYRISTOR PHASE 1200V TO-263
товар відсутній
CLA40P1200FC CLA40P1200FC.pdf
CLA40P1200FC
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1200V I4-PAC
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+985.09 грн
10+ 871.45 грн
CLA5E1200UC CLA5E1200UC.pdf
CLA5E1200UC
Виробник: IXYS
Description: THYRISTOR PHASE 1200V TO-252
товар відсутній
CLA60MT1200NHB CLA60MT1200NHB.pdf
CLA60MT1200NHB
Виробник: IXYS
Description: TRIAC 1.2KV 66A TO-247
товар відсутній
CLA60MT1200NTZ-TUB CLA60MT1200NTZ.pdf
CLA60MT1200NTZ-TUB
Виробник: IXYS
Description: TRIAC 1.2KV 66A TO-268AA
товар відсутній
CLA60PD1200NA media?resourcetype=datasheets&itemid=2f0b1188-ebcf-43a4-97aa-f3cb8f1ddcdc&filename=Littelfuse-Power-Semiconductors-CLA60PD1200NA-Datasheet
CLA60PD1200NA
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 94 A
Voltage - Off State: 1.2 kV
на замовлення 139 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2218.17 грн
10+ 1898.31 грн
100+ 1660.31 грн
CLA80E1200HF CLA80E1200HF.pdf
CLA80E1200HF
Виробник: IXYS
Description: SCR 1.2KV 126A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 38 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.77 V
Current - Off State (Max): 50 µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.2 kV
на замовлення 3150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+665.37 грн
30+ 511.11 грн
120+ 457.3 грн
510+ 378.67 грн
1020+ 340.8 грн
CMA30P1600FC CMA30P1600FC.pdf
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1600V I4-PAC
товар відсутній
CMA50P1600FC media?resourcetype=datasheets&itemid=217761c4-28ee-4a8f-acc4-895ff6c1f343&filename=Littelfuse-Power-Semiconductors-CMA50P1600FC-Datasheet
CMA50P1600FC
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1600V I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+828.67 грн
25+ 669.36 грн
CMA80PD1600NA CMA80PD1600NA.pdf
CMA80PD1600NA
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1600V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
товар відсутній
CS20-25MOT1 CS20-25moT1.pdf
CS20-25MOT1
Виробник: IXYS
Description: THYRISTOR PHASE 2500V TO-263AA
товар відсутній
DH2x60-18A DH2x60-18A.pdf
DH2x60-18A
Виробник: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
товар відсутній
DH2x61-16A DH2x61-16A.pdf
Виробник: IXYS
Description: DIODE MODULE 1.6KV 60A SOT227B
товар відсутній
DH60-14A DH60-14A.pdf
DH60-14A
Виробник: IXYS
Description: DIODE GEN PURP 1.4KV 60A TO247AD
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+858.42 грн
10+ 747.35 грн
DH60-16A DH60-14A.pdf
DH60-16A
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 60A TO247AD
товар відсутній
DHG10I1800PA DHG10I1800PA.pdf
DHG10I1800PA
Виробник: IXYS
Description: DIODE GEN PURP 1.8KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
товар відсутній
DLA100B1200LB DLA100B1200LB.pdf
Виробник: IXYS
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
товар відсутній
DLA100B1200LB-TRR DLA100B1200LB.pdf
Виробник: IXYS
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
товар відсутній
DLA20IM800PC-TUB DLA20IM800PC.pdf
DLA20IM800PC-TUB
Виробник: IXYS
Description: DIODE GEN PURP 800V 20A TO263
товар відсутній
DLA40IM800PC DLA40IM800PC.pdf
DLA40IM800PC
Виробник: IXYS
Description: DIODE GEN PURP 800V 40A TO263
товар відсутній
DLA5P800UC DLA5P800UC.pdf
DLA5P800UC
Виробник: IXYS
Description: DIODE ARRAY GP 800V 5A TO252
товар відсутній
DLA60I1200HA DLA60I1200HA.pdf
DLA60I1200HA
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
товар відсутній
DMA10I1600PA media?resourcetype=datasheets&itemid=2b155cff-031c-4638-8388-a50ff2b97f25&filename=Littelfuse-Power-Semiconductors-DMA10I1600PA-Datasheet
DMA10I1600PA
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+135.06 грн
50+ 104.49 грн
100+ 85.96 грн
Мінімальне замовлення: 3
DMA150E1600NA DMA150E1600NA.pdf
DMA150E1600NA
Виробник: IXYS
Description: DIODE GP 1.6KV 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 400V, 1MHz
Current - Average Rectified (Io): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
DMA150YA1600NA DMA150YA1600NA.pdf
DMA150YA1600NA
Виробник: IXYS
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2379.17 грн
10+ 2035.49 грн
100+ 1780.34 грн
DMA150YC1600NA DMA150YC1600NA.pdf
DMA150YC1600NA
Виробник: IXYS
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 397 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2372.3 грн
10+ 2030.13 грн
100+ 1775.63 грн
DMA30E1800HA DMA30E1800HA.pdf
Виробник: IXYS
Description: DIODE GEN PURP 1800V 30A TO247
товар відсутній
DMA90U1800LB DMA90U1800LB.pdf
Виробник: IXYS
Description: DIODE RECTIFER TRIPLE 1800V SMPD
товар відсутній
DNA30E2200FE media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A I4-PAC
Packaging: Tube
Package / Case: TO-251-2, IPAK
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: i4-PAC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+633.33 грн
25+ 486.48 грн
100+ 435.27 грн
DNA30E2200PA media?resourcetype=datasheets&itemid=42adbfd3-2825-42ce-8fe6-b73bb77fbe1c&filename=Littelfuse-Power-Semiconductors-DNA30E2200PA-Datasheet
DNA30E2200PA
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 612 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+320.48 грн
50+ 244.84 грн
100+ 209.86 грн
500+ 175.06 грн
DNA30E2200PC DNA30E2200PC.pdf
DNA30E2200PC
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
товар відсутній
DNA30E2200PC-TUB DNA30E2200PC.pdf
DNA30E2200PC-TUB
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
товар відсутній
DNA30EM2200PC Rectifier%20diodes%20ad.pdf
DNA30EM2200PC
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
товар відсутній
DPF30I300PA DPF30I300PA.pdf
DPF30I300PA
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO220AC
товар відсутній
DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Виробник: IXYS
Description: DIODE ARRAY GP 300V 30A TO247AD
товар відсутній
DPF80C200HB DPF80C200HB.pdf
DPF80C200HB
Виробник: IXYS
Description: DIODE ARRAY GP 200V 40A TO247AD
товар відсутній
DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Виробник: IXYS
Description: DIODE ARRAY 400V 10A ISOPLUS220
товар відсутній
DPG20C400PC DPG20C400PC.pdf
DPG20C400PC
Виробник: IXYS
Description: DIODE ARRAY GP 400V 10A TO263
товар відсутній
DPG30I400HA DPG30I400HA.pdf
DPG30I400HA
Виробник: IXYS
Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
DPG30IM300PC DPG30IM300PC.pdf
DPG30IM300PC
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO263
товар відсутній
DPG30P300PJ DPG30P300PJ.pdf
DPG30P300PJ
Виробник: IXYS
Description: DIODE ARRAY 300V 30A ISOPLUS220
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+399.07 грн
10+ 345.27 грн
DPG80C300HB DPG80C300HB.pdf
DPG80C300HB
Виробник: IXYS
Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+566.18 грн
10+ 492.6 грн
100+ 407.83 грн
500+ 333.28 грн
1000+ 313.14 грн
DPG80C400HB DPG80C400HB.pdf
DPG80C400HB
Виробник: IXYS
Description: DIODE ARRAY GP 400V 40A TO247AD
товар відсутній
DSA10C150PB DSA10C150PB.pdf
DSA10C150PB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V TO220
товар відсутній
DSA120X150LB DSA120X150LB.pdf
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
товар відсутній
DSA120X150LB-TRR DSA120X150LB.pdf
DSA120X150LB-TRR
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
DSA15IM200UC DSA15IM200UC.pdf
DSA15IM200UC
Виробник: IXYS
Description: DIODE SCHOTTKY 200V 15A TO252
товар відсутній
DSA240X150NA media?resourcetype=datasheets&itemid=34D8D74B-7E13-48DA-859A-692F9F387798&filename=Littelfuse-Power-Semiconductors-DSA240X150NA-Datasheet
DSA240X150NA
Виробник: IXYS
Description: DIODE MOD SCHOTT 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
товар відсутній
DSA240X200NA DSA240X200NA.pdf
DSA240X200NA
Виробник: IXYS
Description: DIODE MOD SCHOTT 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
товар відсутній
DSA300I100NA DSA300I100NA.pdf
DSA300I100NA
Виробник: IXYS
Description: DIODE SCHOTTKY 100V 300A SOT227B
товар відсутній
DSA300I200NA DSA300I200NA.pdf
DSA300I200NA
Виробник: IXYS
Description: DIODE SCHOTTKY 200V 300A SOT227B
товар відсутній
DSA300I45NA DSA300I45NA.pdf
DSA300I45NA
Виробник: IXYS
Description: DIODE SCHOTTKY 45V 300A SOT227B
товар відсутній
Обрати Сторінку:    << Попередня Сторінка ]  1 33 66 68 69 70 71 72 73 74 75 76 77 78 99 132 165 198 231 264 297 330 333  Наступна Сторінка >> ]