Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYH80N90C3 | IXYS |
Description: IGBT 900V 165A 830W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 34ns/90ns Switching Energy: 4.3mJ (on), 1.9mJ (off) Test Condition: 450V, 80A, 2Ohm, 15V Gate Charge: 145 nC Part Status: Active Current - Collector (Ic) (Max): 165 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 360 A Power - Max: 830 W |
товар відсутній |
||||||||||||
IXTA44P15TTRL | IXYS | Description: MOSFET P-CH 150V 44A TO-263 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
||||||||||||
IXTY12N06TTRL | IXYS |
Description: MOSFET N-CH 60V 12A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V |
товар відсутній |
||||||||||||
IXTY12N06TTRL | IXYS |
Description: MOSFET N-CH 60V 12A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V |
товар відсутній |
||||||||||||
CLA100PD1200NA | IXYS |
Description: MOD THYRISTOR DUAL 1200V SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 100 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 150 A Voltage - Off State: 1.2 kV |
товар відсутній |
||||||||||||
CLA110MB1200NA | IXYS |
Description: MOD THYRISTOR DUAL 1200V SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 110 A Voltage - Off State: 1.2 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
CLA30E1200HB | IXYS |
Description: SCR 1.2KV 47A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 28 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A Current - On State (It (AV)) (Max): 30 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.56 V Current - Off State (Max): 10 µA Supplier Device Package: TO-247AD Current - On State (It (RMS)) (Max): 47 A Voltage - Off State: 1.2 kV |
товар відсутній |
||||||||||||
C0E1200PBLA3 | IXYS | Description: SCR 1.2KV 47A TO220AB |
товар відсутній |
||||||||||||
CLA30E1200PC | IXYS | Description: THYRISTOR PHASE 1200V TO-263 |
товар відсутній |
||||||||||||
CLA40P1200FC | IXYS | Description: MOD THYRISTOR DUAL 1200V I4-PAC |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
CLA5E1200UC | IXYS | Description: THYRISTOR PHASE 1200V TO-252 |
товар відсутній |
||||||||||||
CLA60MT1200NHB | IXYS | Description: TRIAC 1.2KV 66A TO-247 |
товар відсутній |
||||||||||||
CLA60MT1200NTZ-TUB | IXYS | Description: TRIAC 1.2KV 66A TO-268AA |
товар відсутній |
||||||||||||
CLA60PD1200NA | IXYS |
Description: MOD THYRISTOR DUAL 1200V SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 60 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 94 A Voltage - Off State: 1.2 kV |
на замовлення 139 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
CLA80E1200HF | IXYS |
Description: SCR 1.2KV 126A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 38 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A Current - On State (It (AV)) (Max): 80 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.77 V Current - Off State (Max): 50 µA Supplier Device Package: PLUS247™-3 Part Status: Active Current - On State (It (RMS)) (Max): 126 A Voltage - Off State: 1.2 kV |
на замовлення 3150 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
CMA30P1600FC | IXYS | Description: MOD THYRISTOR DUAL 1600V I4-PAC |
товар відсутній |
||||||||||||
CMA50P1600FC | IXYS |
Description: MOD THYRISTOR DUAL 1600V I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 80 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.6 kV |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
CMA80PD1600NA | IXYS |
Description: MOD THYRISTOR DUAL 1600V SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 80 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 126 A Voltage - Off State: 1.6 kV |
товар відсутній |
||||||||||||
CS20-25MOT1 | IXYS | Description: THYRISTOR PHASE 2500V TO-263AA |
товар відсутній |
||||||||||||
DH2x60-18A | IXYS |
Description: DIODE MOD GP 1800V 60A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 230 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A Current - Reverse Leakage @ Vr: 200 µA @ 1800 V |
товар відсутній |
||||||||||||
DH2x61-16A | IXYS | Description: DIODE MODULE 1.6KV 60A SOT227B |
товар відсутній |
||||||||||||
DH60-14A | IXYS | Description: DIODE GEN PURP 1.4KV 60A TO247AD |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
DH60-16A | IXYS | Description: DIODE GEN PURP 1.6KV 60A TO247AD |
товар відсутній |
||||||||||||
DHG10I1800PA | IXYS |
Description: DIODE GEN PURP 1.8KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 900V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1800 V |
товар відсутній |
||||||||||||
DLA100B1200LB | IXYS | Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B |
товар відсутній |
||||||||||||
DLA100B1200LB-TRR | IXYS | Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B |
товар відсутній |
||||||||||||
DLA20IM800PC-TUB | IXYS | Description: DIODE GEN PURP 800V 20A TO263 |
товар відсутній |
||||||||||||
DLA40IM800PC | IXYS | Description: DIODE GEN PURP 800V 40A TO263 |
товар відсутній |
||||||||||||
DLA5P800UC | IXYS | Description: DIODE ARRAY GP 800V 5A TO252 |
товар відсутній |
||||||||||||
DLA60I1200HA | IXYS |
Description: DIODE GEN PURP 1.2KV 60A TO247AD Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 33pF @ 400V, 1MHz Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
товар відсутній |
||||||||||||
DMA10I1600PA | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
на замовлення 299 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
DMA150E1600NA | IXYS |
Description: DIODE GP 1.6KV 150A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 400V, 1MHz Current - Average Rectified (Io): 150A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A Current - Reverse Leakage @ Vr: 200 µA @ 1600 V |
товар відсутній |
||||||||||||
DMA150YA1600NA | IXYS |
Description: DIODE MOD GP 1600V 150A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 3 Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
DMA150YC1600NA | IXYS |
Description: DIODE MOD GP 1600V 150A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 3 Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V |
на замовлення 397 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
DMA30E1800HA | IXYS | Description: DIODE GEN PURP 1800V 30A TO247 |
товар відсутній |
||||||||||||
DMA90U1800LB | IXYS | Description: DIODE RECTIFER TRIPLE 1800V SMPD |
товар відсутній |
||||||||||||
DNA30E2200FE | IXYS |
Description: DIODE GEN PURP 2.2KV 30A I4-PAC Packaging: Tube Package / Case: TO-251-2, IPAK Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: i4-PAC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
на замовлення 227 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
DNA30E2200PA | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
на замовлення 612 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
DNA30E2200PC | IXYS | Description: DIODE GEN PURP 2.2KV 30A TO263 |
товар відсутній |
||||||||||||
DNA30E2200PC-TUB | IXYS | Description: DIODE GEN PURP 2.2KV 30A TO263 |
товар відсутній |
||||||||||||
DNA30EM2200PC | IXYS | Description: DIODE GEN PURP 2.2KV 30A TO263 |
товар відсутній |
||||||||||||
DPF30I300PA | IXYS | Description: DIODE GEN PURP 300V 30A TO220AC |
товар відсутній |
||||||||||||
DPF60C300HB | IXYS | Description: DIODE ARRAY GP 300V 30A TO247AD |
товар відсутній |
||||||||||||
DPF80C200HB | IXYS | Description: DIODE ARRAY GP 200V 40A TO247AD |
товар відсутній |
||||||||||||
DPG10P400PJ | IXYS | Description: DIODE ARRAY 400V 10A ISOPLUS220 |
товар відсутній |
||||||||||||
DPG20C400PC | IXYS | Description: DIODE ARRAY GP 400V 10A TO263 |
товар відсутній |
||||||||||||
DPG30I400HA | IXYS |
Description: DIODE GEN PURP 400V 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 200V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товар відсутній |
||||||||||||
DPG30IM300PC | IXYS | Description: DIODE GEN PURP 300V 30A TO263 |
товар відсутній |
||||||||||||
DPG30P300PJ | IXYS | Description: DIODE ARRAY 300V 30A ISOPLUS220 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
DPG80C300HB | IXYS |
Description: DIODE ARRAY GP 300V 40A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
DPG80C400HB | IXYS | Description: DIODE ARRAY GP 400V 40A TO247AD |
товар відсутній |
||||||||||||
DSA10C150PB | IXYS | Description: DIODE ARRAY SCHOTTKY 150V TO220 |
товар відсутній |
||||||||||||
DSA120X150LB | IXYS | Description: DIODE ARRAY SCHOTTKY 150V SMPD |
товар відсутній |
||||||||||||
DSA120X150LB-TRR | IXYS |
Description: DIODE ARRAY SCHOTTKY 150V SMPD Packaging: Tape & Reel (TR) Package / Case: 9-SMD Module Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 75A Supplier Device Package: ISOPLUS-SMPD™.B Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товар відсутній |
||||||||||||
DSA15IM200UC | IXYS | Description: DIODE SCHOTTKY 200V 15A TO252 |
товар відсутній |
||||||||||||
DSA240X150NA | IXYS |
Description: DIODE MOD SCHOTT 150V SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 150 V |
товар відсутній |
||||||||||||
DSA240X200NA | IXYS |
Description: DIODE MOD SCHOTT 200V SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A Current - Reverse Leakage @ Vr: 4 mA @ 200 V |
товар відсутній |
||||||||||||
DSA300I100NA | IXYS | Description: DIODE SCHOTTKY 100V 300A SOT227B |
товар відсутній |
||||||||||||
DSA300I200NA | IXYS | Description: DIODE SCHOTTKY 200V 300A SOT227B |
товар відсутній |
||||||||||||
DSA300I45NA | IXYS | Description: DIODE SCHOTTKY 45V 300A SOT227B |
товар відсутній |
IXYH80N90C3 |
Виробник: IXYS
Description: IGBT 900V 165A 830W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
Description: IGBT 900V 165A 830W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
товар відсутній
IXTA44P15TTRL |
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO-263
Description: MOSFET P-CH 150V 44A TO-263
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)IXTY12N06TTRL |
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
IXTY12N06TTRL |
Виробник: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
товар відсутній
CLA100PD1200NA |
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
товар відсутній
CLA110MB1200NA |
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 110 A
Voltage - Off State: 1.2 kV
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 110 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1909.9 грн |
CLA30E1200HB |
Виробник: IXYS
Description: SCR 1.2KV 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.56 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247AD
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.56 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247AD
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
товар відсутній
CLA40P1200FC |
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1200V I4-PAC
Description: MOD THYRISTOR DUAL 1200V I4-PAC
на замовлення 16 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 985.09 грн |
10+ | 871.45 грн |
CLA60PD1200NA |
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 94 A
Voltage - Off State: 1.2 kV
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 94 A
Voltage - Off State: 1.2 kV
на замовлення 139 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2218.17 грн |
10+ | 1898.31 грн |
100+ | 1660.31 грн |
CLA80E1200HF |
Виробник: IXYS
Description: SCR 1.2KV 126A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 38 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.77 V
Current - Off State (Max): 50 µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 126A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 38 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.77 V
Current - Off State (Max): 50 µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.2 kV
на замовлення 3150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 665.37 грн |
30+ | 511.11 грн |
120+ | 457.3 грн |
510+ | 378.67 грн |
1020+ | 340.8 грн |
CMA50P1600FC |
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1600V I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
Description: MOD THYRISTOR DUAL 1600V I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 828.67 грн |
25+ | 669.36 грн |
CMA80PD1600NA |
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1600V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
Description: MOD THYRISTOR DUAL 1600V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
товар відсутній
DH2x60-18A |
Виробник: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
товар відсутній
DH60-14A |
Виробник: IXYS
Description: DIODE GEN PURP 1.4KV 60A TO247AD
Description: DIODE GEN PURP 1.4KV 60A TO247AD
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 858.42 грн |
10+ | 747.35 грн |
DHG10I1800PA |
Виробник: IXYS
Description: DIODE GEN PURP 1.8KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
Description: DIODE GEN PURP 1.8KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
товар відсутній
DLA60I1200HA |
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
товар відсутній
DMA10I1600PA |
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 135.06 грн |
50+ | 104.49 грн |
100+ | 85.96 грн |
DMA150E1600NA |
Виробник: IXYS
Description: DIODE GP 1.6KV 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 400V, 1MHz
Current - Average Rectified (Io): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Description: DIODE GP 1.6KV 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 400V, 1MHz
Current - Average Rectified (Io): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
DMA150YA1600NA |
Виробник: IXYS
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2379.17 грн |
10+ | 2035.49 грн |
100+ | 1780.34 грн |
DMA150YC1600NA |
Виробник: IXYS
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
на замовлення 397 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2372.3 грн |
10+ | 2030.13 грн |
100+ | 1775.63 грн |
DNA30E2200FE |
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A I4-PAC
Packaging: Tube
Package / Case: TO-251-2, IPAK
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: i4-PAC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: DIODE GEN PURP 2.2KV 30A I4-PAC
Packaging: Tube
Package / Case: TO-251-2, IPAK
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: i4-PAC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 633.33 грн |
25+ | 486.48 грн |
100+ | 435.27 грн |
DNA30E2200PA |
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: DIODE GEN PURP 2.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 612 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 320.48 грн |
50+ | 244.84 грн |
100+ | 209.86 грн |
500+ | 175.06 грн |
DPG30I400HA |
Виробник: IXYS
Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
DPG30P300PJ |
Виробник: IXYS
Description: DIODE ARRAY 300V 30A ISOPLUS220
Description: DIODE ARRAY 300V 30A ISOPLUS220
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 399.07 грн |
10+ | 345.27 грн |
DPG80C300HB |
Виробник: IXYS
Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 566.18 грн |
10+ | 492.6 грн |
100+ | 407.83 грн |
500+ | 333.28 грн |
1000+ | 313.14 грн |
DSA120X150LB-TRR |
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
DSA240X150NA |
Виробник: IXYS
Description: DIODE MOD SCHOTT 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
Description: DIODE MOD SCHOTT 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
товар відсутній
DSA240X200NA |
Виробник: IXYS
Description: DIODE MOD SCHOTT 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
Description: DIODE MOD SCHOTT 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
товар відсутній