Технічний опис IXFJ26N50P3 Littelfuse
Description: MOSFET N-CH 500V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 265mOhm @ 13A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V.
Інші пропозиції IXFJ26N50P3
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IXFJ26N50P3 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 78A Power dissipation: 180W Case: ISO247™ Gate-source voltage: ±30V On-state resistance: 0.295Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
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IXFJ26N50P3 | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 500V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 13A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V |
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IXFJ26N50P3 | Виробник : IXYS |
MOSFETs MSFT N-CH HIPERFET-POLAR3 |
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IXFJ26N50P3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 78A Power dissipation: 180W Case: ISO247™ Gate-source voltage: ±30V On-state resistance: 0.295Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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