IXFA22N65X2 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 650V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Description: MOSFET N-CH 650V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
на замовлення 1844 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 383.09 грн |
50+ | 210.19 грн |
100+ | 194.11 грн |
500+ | 163.48 грн |
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Технічний опис IXFA22N65X2 Littelfuse Inc.
Description: MOSFET N-CH 650V 22A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1.5mA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V.
Інші пропозиції IXFA22N65X2 за ціною від 194.46 грн до 435.53 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXFA22N65X2 | Виробник : IXYS | MOSFETs MOSFET 650V/22A Ultra Junction X2 |
на замовлення 488 шт: термін постачання 21-30 дні (днів) |
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IXFA22N65X2 | Виробник : Littelfuse | Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK |
товару немає в наявності |
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IXFA22N65X2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFA22N65X2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns |
товару немає в наявності |