![IXDN55N120D1 IXDN55N120D1](https://www.mouser.com/images/mouserelectronics/lrg/SOT_227_4_DSL.jpg)
на замовлення 75 шт:
термін постачання 1011-1020 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2839.22 грн |
10+ | 2582.27 грн |
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Технічний опис IXDN55N120D1 IXYS
Description: IGBT MOD 1200V 100A 450W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 55A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: NPT, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 450 W, Current - Collector Cutoff (Max): 3.8 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Інші пропозиції IXDN55N120D1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXDN55N120D1 | Виробник : Littelfuse |
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товар відсутній |
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IXDN55N120D1 | Виробник : IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B Technology: NPT Collector current: 62A Power dissipation: 450W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 124A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Features of semiconductor devices: high voltage Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
товар відсутній |
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![]() |
IXDN55N120D1 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 55A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 450 W Current - Collector Cutoff (Max): 3.8 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
товар відсутній |
|
![]() |
IXDN55N120D1 | Виробник : IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B Technology: NPT Collector current: 62A Power dissipation: 450W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 124A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Features of semiconductor devices: high voltage Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |