![MIEB101H1200EH MIEB101H1200EH](https://www.mouser.com/images/ixys/lrg/E3_SPL.jpg)
на замовлення 31 шт:
термін постачання 553-562 дні (днів)
Кількість | Ціна без ПДВ |
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1+ | 10468.12 грн |
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Технічний опис MIEB101H1200EH IXYS
Description: IGBT MODULE 1200V 183A 630W E3, Packaging: Box, Package / Case: E3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: E3, Part Status: Active, Current - Collector (Ic) (Max): 183 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 630 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V.
Інші пропозиції MIEB101H1200EH
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MIEB101H1200EH | Виробник : Littelfuse |
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товар відсутній |
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MIEB101H1200EH | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W Topology: H-bridge Technology: Sonic FRD™; SPT+ Case: E3-Pack Application: motors; photovoltaics Power dissipation: 630W Collector current: 128A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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MIEB101H1200EH | Виробник : IXYS |
Description: IGBT MODULE 1200V 183A 630W E3 Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: E3 Part Status: Active Current - Collector (Ic) (Max): 183 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 630 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V |
товар відсутній |
|
MIEB101H1200EH | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W Topology: H-bridge Technology: Sonic FRD™; SPT+ Case: E3-Pack Application: motors; photovoltaics Power dissipation: 630W Collector current: 128A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw |
товар відсутній |