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IPP50R299CPXKSA1 Infineon Technologies

Name: IPP50R299CPXKSA1
Brand: Infineon Technologies
SKU: 12788719-3
Price: 67.76 UAH
Availability: InStock

Infineon-IPP50R299CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123852caf2b65fc

Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V

на замовлення 16000 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
313+	67.76 грн

Мінімальне замовлення: 313

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Технічний опис IPP50R299CPXKSA1 Infineon Technologies

Description: MOSFET N-CH 550V 12A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 440µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V.

Інші пропозиції IPP50R299CPXKSA1

Назва	Виробник	Інформація	Доступність
IPP50R299CPXKSA1	Виробник : Infineon Technologies	Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube	товар відсутній
IPP50R299CPXKSA1	Виробник : INFINEON TECHNOLOGIES	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт	товар відсутній
IPP50R299CPXKSA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 550V 12A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V	товар відсутній
IPP50R299CPXKSA1	Виробник : Infineon Technologies	MOSFET N-Ch 500V 12A TO220-3	товар відсутній
IPP50R299CPXKSA1	Виробник : INFINEON TECHNOLOGIES	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: THT Kind of package: tube Kind of channel: enhanced	товар відсутній