IPI50R250CPXKSA1 Infineon Technologies
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Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
270+ | 77.91 грн |
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Технічний опис IPI50R250CPXKSA1 Infineon Technologies
Description: MOSFET N-CH 500V 13A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 520µA, Supplier Device Package: PG-TO262-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V.
Інші пропозиції IPI50R250CPXKSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPI50R250CPXKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPI50R250CPXKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3 Mounting: THT Case: PG-TO262-3 Power dissipation: 114W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 500V Drain current: 13A On-state resistance: 0.25Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
|
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IPI50R250CPXKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V |
товар відсутній |
|
![]() |
IPI50R250CPXKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3 Mounting: THT Case: PG-TO262-3 Power dissipation: 114W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 500V Drain current: 13A On-state resistance: 0.25Ω Type of transistor: N-MOSFET |
товар відсутній |