IRS2308PBF Infineon Technologies
на замовлення 377 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 468.22 грн |
| 10+ | 415.46 грн |
| 25+ | 303.63 грн |
| 100+ | 272.01 грн |
| 250+ | 255.14 грн |
| 500+ | 251.62 грн |
| 1000+ | 231.24 грн |
Відгуки про товар
Написати відгук
Технічний опис IRS2308PBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-PDIP, Rise / Fall Time (Typ): 100ns, 35ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, Part Status: Last Time Buy, DigiKey Programmable: Not Verified.
Інші пропозиції IRS2308PBF за ціною від 242.06 грн до 242.06 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| IRS2308PBF | Виробник : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IRS2308PBF - IRS2308 - GATE DRIVERtariffCode: 85423190 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
на замовлення 193 шт: термін постачання 21-31 дні (днів) |
|
|||||
 |
IRS2308PBF Код товару: 75644 |
Мікросхеми > Інші мікросхеми 8542 39 90 00 |
товар відсутній
|
||||||
 |
IRS2308PBF | Виробник : Infineon Technologies |
Driver 600V 0.6A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin PDIP Tube |
товар відсутній |
|||||
 |
IRS2308PBF | Виробник : Infineon Technologies |
Driver 600V 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin PDIP Tube |
товар відсутній |
|||||
 |
IRS2308PBF | Виробник : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -600...200mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 330ns Turn-off time: 235ns кількість в упаковці: 1 шт |
товар відсутній |
|||||
 |
IRS2308PBF | Виробник : Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
товар відсутній |
|||||
|
|
IRS2308PBF | Виробник : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -600...200mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 330ns Turn-off time: 235ns |
товар відсутній |