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IPB60R280C6ATMA1 INFINEON TECHNOLOGIES

Name: IPB60R280C6ATMA1
Brand: INFINEON TECHNOLOGIES
SKU: 455271230-1
Price: 92.25 UAH
Availability: BackOrder

Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Technology: CoolMOS™ C6
Mounting: SMD
Power dissipation: 104W
Case: PG-TO263-3
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
кількість в упаковці: 1 шт

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Технічний опис IPB60R280C6ATMA1 INFINEON TECHNOLOGIES

Description: MOSFET N-CH 600V 13.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 430µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.

Інші пропозиції IPB60R280C6ATMA1

Назва	Виробник	Інформація	Доступність
IPB60R280C6ATMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 600V 13.8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 430µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V	товар відсутній
IPB60R280C6ATMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 600V 13.8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 430µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V	товар відсутній
IPB60R280C6ATMA1	Виробник : Infineon Technologies	MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6	товар відсутній
IPB60R280C6ATMA1	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3 Technology: CoolMOS™ C6 Mounting: SMD Power dissipation: 104W Case: PG-TO263-3 Polarisation: unipolar Drain current: 13.8A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.28Ω	товар відсутній