IPB160N04S4LH1ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 110µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 110µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1000+ | 115.78 грн |
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Технічний опис IPB160N04S4LH1ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 110µA, Supplier Device Package: PG-TO263-7-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14950 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IPB160N04S4LH1ATMA1 за ціною від 100.87 грн до 229.6 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IPB160N04S4LH1ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 160A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 110µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1895 шт: термін постачання 21-31 дні (днів) |
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IPB160N04S4LH1ATMA1 | Виробник : Infineon Technologies | MOSFETs N-CHANNEL 30/40V |
на замовлення 619 шт: термін постачання 21-30 дні (днів) |
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IPB160N04S4LH1ATMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) D2PAK T/R |
товар відсутній |
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IPB160N04S4LH1ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Pulsed drain current: 640A Power dissipation: 167W Case: PG-TO263-7-3 Gate-source voltage: -16...20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
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IPB160N04S4LH1ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Pulsed drain current: 640A Power dissipation: 167W Case: PG-TO263-7-3 Gate-source voltage: -16...20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |