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AUIRFZ44VZS AUIRFZ44VZS INFINEON TECHNOLOGIES auirfz44vzs.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 57A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Power dissipation: 92W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRLR024NTRPBF IRLR024NTRPBF INFINEON TECHNOLOGIES irlr024npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 16959 шт:
термін постачання 21-30 дні (днів)
7+58.56 грн
10+ 42.98 грн
25+ 34.39 грн
47+ 18.52 грн
129+ 17.49 грн
Мінімальне замовлення: 7
IRLML2030TRPBF IRLML2030TRPBF INFINEON TECHNOLOGIES irlml2030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 6133 шт:
термін постачання 21-30 дні (днів)
16+26.11 грн
21+ 18.15 грн
50+ 11.83 грн
100+ 9.77 грн
127+ 6.83 грн
348+ 6.47 грн
1000+ 6.17 грн
Мінімальне замовлення: 16
IRLML2060TRPBF IRLML2060TRPBF INFINEON TECHNOLOGIES irlml2060pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1005 шт:
термін постачання 21-30 дні (днів)
16+26.11 грн
22+ 17.49 грн
100+ 10.51 грн
134+ 6.47 грн
368+ 6.1 грн
Мінімальне замовлення: 16
IRLML2246TRPBF IRLML2246TRPBF INFINEON TECHNOLOGIES irlml2246pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 495 шт:
термін постачання 21-30 дні (днів)
22+18.2 грн
26+ 14.33 грн
33+ 11.46 грн
100+ 6.47 грн
171+ 5.07 грн
470+ 4.78 грн
Мінімальне замовлення: 22
IRLML2402TRPBF IRLML2402TRPBF INFINEON TECHNOLOGIES IRLML2402TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 0.54W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 0.54W
Case: SOT23
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Part status: Not recommended for new designs
на замовлення 7272 шт:
термін постачання 21-30 дні (днів)
27+15.03 грн
31+ 12.05 грн
36+ 10.29 грн
50+ 8.82 грн
100+ 7.42 грн
174+ 4.97 грн
479+ 4.7 грн
Мінімальне замовлення: 27
IRLML2502TRPBF IRLML2502TRPBF INFINEON TECHNOLOGIES IRLML2502TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRLML2803TRPBF IRLML2803TRPBF INFINEON TECHNOLOGIES irlml2803.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 3628 шт:
термін постачання 21-30 дні (днів)
18+22.16 грн
25+ 14.92 грн
50+ 10.87 грн
100+ 9.48 грн
102+ 8.52 грн
279+ 8.08 грн
Мінімальне замовлення: 18
IRF2807PBF IRF2807PBF INFINEON TECHNOLOGIES irf2807.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 106.7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
4+97.73 грн
10+ 83.77 грн
18+ 50.7 грн
47+ 47.76 грн
Мінімальне замовлення: 4
IRF2807STRLPBF IRF2807STRLPBF INFINEON TECHNOLOGIES irf2807spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF2807STRRPBF IRF2807STRRPBF INFINEON TECHNOLOGIES irf2807spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF2807ZPBF IRF2807ZPBF INFINEON TECHNOLOGIES irf2807z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IR21844PBF IR21844PBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
2+363.21 грн
3+ 303.47 грн
4+ 232.93 грн
11+ 220.43 грн
Мінімальне замовлення: 2
IR21844SPBF IR21844SPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 161 шт:
термін постачання 21-30 дні (днів)
2+227.1 грн
8+ 123.44 грн
20+ 116.1 грн
Мінімальне замовлення: 2
IR21844STRPBF IR21844STRPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
товар відсутній
IR2184PBF IR2184PBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
3+175.67 грн
7+ 129.32 грн
19+ 122.71 грн
Мінімальне замовлення: 3
IR2184SPBF IR2184SPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
2+219.19 грн
3+ 183.7 грн
7+ 142.55 грн
17+ 134.47 грн
Мінімальне замовлення: 2
IR2184STRPBF IR2184STRPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 2673 шт:
термін постачання 21-30 дні (днів)
2+232.64 грн
3+ 202.07 грн
8+ 108.01 грн
22+ 102.13 грн
Мінімальне замовлення: 2
BAT60AE6327HTSA1 BAT60AE6327HTSA1 INFINEON TECHNOLOGIES BAT60AE6327-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 3A; SOD323; 1.35W
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
Type of diode: Schottky rectifying
Case: SOD323
на замовлення 2630 шт:
термін постачання 21-30 дні (днів)
20+19.78 грн
28+ 13.3 грн
100+ 9.92 грн
148+ 5.88 грн
407+ 5.51 грн
Мінімальне замовлення: 20
BAT60BE6327HTSA1 BAT60BE6327HTSA1 INFINEON TECHNOLOGIES BAT60BE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 3A; SOD323; 1.35W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 5A
Power dissipation: 1.35W
на замовлення 4752 шт:
термін постачання 21-30 дні (днів)
14+29.28 грн
19+ 19.77 грн
30+ 12.64 грн
100+ 11.02 грн
140+ 6.1 грн
385+ 5.73 грн
Мінімальне замовлення: 14
IRFB260NPBF IRFB260NPBF INFINEON TECHNOLOGIES irfb260n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
3+176.46 грн
9+ 98.46 грн
24+ 93.32 грн
Мінімальне замовлення: 3
IRS21844SPBF IRS21844SPBF INFINEON TECHNOLOGIES irs2184.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -2.3...1.9A
Number of channels: 2
Case: SO14
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
товар відсутній
BTS452R BTS452R INFINEON TECHNOLOGIES BTS452R-DTE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 0.2Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Output voltage: 62V
товар відсутній
IRF6648TRPBF IRF6648TRPBF INFINEON TECHNOLOGIES irf6648pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BAV70SH6327XTSA1 BAV70SH6327XTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)
44+9.18 грн
70+ 5.28 грн
201+ 4.3 грн
553+ 4.06 грн
1000+ 4.05 грн
Мінімальне замовлення: 44
BAV99SH6327XTSA1 BAV99SH6327XTSA1 INFINEON TECHNOLOGIES BAV99SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
22+18.2 грн
29+ 12.71 грн
36+ 10.21 грн
100+ 7.27 грн
199+ 4.34 грн
547+ 4.11 грн
Мінімальне замовлення: 22
IRS2092STRPBF IRS2092STRPBF INFINEON TECHNOLOGIES IRS2092.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
товар відсутній
IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES IPI180N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 483 шт:
термін постачання 21-30 дні (днів)
5+88.63 грн
6+ 71.27 грн
18+ 49.97 грн
48+ 47.03 грн
Мінімальне замовлення: 5
IPP180N10N3GXKSA1 IPP180N10N3GXKSA1 INFINEON TECHNOLOGIES IPP180N10N3G-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRF7413TRPBF IRF7413TRPBF INFINEON TECHNOLOGIES irf7413pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7413ZTRPBF IRF7413ZTRPBF INFINEON TECHNOLOGIES irf7413zpbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 13A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
на замовлення 940 шт:
термін постачання 21-30 дні (днів)
7+60.14 грн
10+ 47.98 грн
40+ 22.12 грн
108+ 20.87 грн
Мінімальне замовлення: 7
IRS20752LTRPBF IRS20752LTRPBF INFINEON TECHNOLOGIES IRS20752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 255ns
Supply voltage: 10...18V DC
Turn-on time: 225ns
Operating temperature: -40...125°C
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 200V
товар відсутній
IRFP064NPBF IRFP064NPBF INFINEON TECHNOLOGIES irfp064n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
3+147.97 грн
5+ 124.91 грн
9+ 106.54 грн
23+ 100.67 грн
Мінімальне замовлення: 3
IRS2453DSPBF IRS2453DSPBF INFINEON TECHNOLOGIES irs2453d.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
товар відсутній
IRFP3206PBF IRFP3206PBF INFINEON TECHNOLOGIES irfp3206pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
2+212.07 грн
5+ 181.49 грн
10+ 171.94 грн
Мінімальне замовлення: 2
IRLML5103TRPBF IRLML5103TRPBF INFINEON TECHNOLOGIES irlml5103pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRF3415PBF IRF3415PBF INFINEON TECHNOLOGIES irf3415.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
4+125.82 грн
10+ 108.01 грн
12+ 72.74 грн
33+ 68.33 грн
Мінімальне замовлення: 4
IRF3415STRLPBF IRF3415STRLPBF INFINEON TECHNOLOGIES irf3415spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFP150MPBF IRFP150MPBF INFINEON TECHNOLOGIES irfp150mpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
3+143.23 грн
5+ 119.77 грн
Мінімальне замовлення: 3
IRFP150NPBF IRFP150NPBF INFINEON TECHNOLOGIES irfp150n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRFP054NPBF IRFP054NPBF INFINEON TECHNOLOGIES irfp054n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 620 шт:
термін постачання 21-30 дні (днів)
3+192.29 грн
5+ 161.65 грн
7+ 128.59 грн
19+ 121.24 грн
Мінімальне замовлення: 3
BCP5216H6327XTSA1 BCP5216H6327XTSA1 INFINEON TECHNOLOGIES BCP5216H6327XTSA1.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Collector current: 1A
Frequency: 125MHz
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
товар відсутній
BSZ097N04LSGATMA1 BSZ097N04LSGATMA1 INFINEON TECHNOLOGIES BSZ097N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
на замовлення 4970 шт:
термін постачання 21-30 дні (днів)
7+60.14 грн
12+ 33.07 грн
25+ 29.17 грн
35+ 25.28 грн
94+ 23.88 грн
1000+ 23.59 грн
Мінімальне замовлення: 7
ICE3A1565FKLA1 ICE3A1565FKLA1 INFINEON TECHNOLOGIES ICE3A_B_ser.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 6.1A; 100kHz; Ch: 1; DIP8; flyback; 0÷72%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 6.1A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...72%
Power: 42/20W
Application: SMPS
Operating voltage: 8.5...21V
товар відсутній
ICE3A2065ELJFKLA1 ICE3A2065ELJFKLA1 INFINEON TECHNOLOGIES ICE3A2065ELJ.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 10.3A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V
товар відсутній
ICE3AR0680JZXKLA1
+1
 		ICE3AR0680JZXKLA1 INFINEON TECHNOLOGIES ICE3AR0680JZ.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 20A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V
товар відсутній
SPA11N60C3XKSA1 INFINEON TECHNOLOGIES SPx11N60C3%20%28E8185%29.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
SPB11N60C3ATMA1 INFINEON TECHNOLOGIES SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
3+155.89 грн
10+ 91.85 грн
26+ 86.7 грн
Мінімальне замовлення: 3
BF5030WH6327XTSA1 INFINEON TECHNOLOGIES BF5030.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 25mA; 200mW; SOT343; SMT
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 8V
Drain current: 25mA
Power dissipation: 0.2W
Case: SOT343
Gate-source voltage: ±6V
Kind of package: reel; tape
Frequency: 800MHz
Kind of channel: depleted
Features of semiconductor devices: dual gate
Electrical mounting: SMT
Open-loop gain: 24dB
товар відсутній
SPW35N60C3 SPW35N60C3 INFINEON TECHNOLOGIES SPW35N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
1+939.28 грн
2+ 760.5 грн
3+ 759.77 грн
4+ 718.62 грн
30+ 689.96 грн
IRFP3306PBF IRFP3306PBF INFINEON TECHNOLOGIES irfp3306pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
2+208.9 грн
8+ 109.48 грн
22+ 103.6 грн
25+ 102.87 грн
Мінімальне замовлення: 2
IRFP4127PBF IRFP4127PBF INFINEON TECHNOLOGIES IRFP4127PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 53A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 53A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
2+297.53 грн
6+ 169 грн
14+ 159.45 грн
Мінімальне замовлення: 2
IRG7PH35UD-EP IRG7PH35UD-EP INFINEON TECHNOLOGIES irg7ph35udpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 240ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRFP4468PBF IRFP4468PBF INFINEON TECHNOLOGIES irfp4468pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+639.37 грн
2+ 454.83 грн
3+ 454.1 грн
6+ 429.85 грн
IRF7809AVTRPBF IRF7809AVTRPBF INFINEON TECHNOLOGIES irf7809avpbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.3A; 2.5W; SO8
Kind of package: reel
Drain-source voltage: 30V
Drain current: 13.3A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: SO8
товар відсутній
IRFB4227PBF IRFB4227PBF INFINEON TECHNOLOGIES irfb4227pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRLML6402TRPBF IRLML6402TRPBF INFINEON TECHNOLOGIES IRLML6402TRPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 12124 шт:
термін постачання 21-30 дні (днів)
15+26.9 грн
19+ 19.4 грн
22+ 16.9 грн
50+ 12.2 грн
100+ 10.73 грн
153+ 5.66 грн
420+ 5.36 грн
Мінімальне замовлення: 15
BSC100N03MSGATMA1 BSC100N03MSGATMA1 INFINEON TECHNOLOGIES BSC100N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 INFINEON TECHNOLOGIES BSC100N06LS3G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 3645 шт:
термін постачання 21-30 дні (днів)
5+96.54 грн
7+ 52.76 грн
22+ 39.75 грн
59+ 37.62 грн
Мінімальне замовлення: 5
AUIRFZ44VZS auirfz44vzs.pdf
AUIRFZ44VZS
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 57A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Power dissipation: 92W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRLR024NTRPBF description irlr024npbf.pdf
IRLR024NTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 16959 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+58.56 грн
10+ 42.98 грн
25+ 34.39 грн
47+ 18.52 грн
129+ 17.49 грн
Мінімальне замовлення: 7
IRLML2030TRPBF irlml2030pbf.pdf
IRLML2030TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 6133 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
16+26.11 грн
21+ 18.15 грн
50+ 11.83 грн
100+ 9.77 грн
127+ 6.83 грн
348+ 6.47 грн
1000+ 6.17 грн
Мінімальне замовлення: 16
IRLML2060TRPBF irlml2060pbf.pdf
IRLML2060TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1005 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
16+26.11 грн
22+ 17.49 грн
100+ 10.51 грн
134+ 6.47 грн
368+ 6.1 грн
Мінімальне замовлення: 16
IRLML2246TRPBF irlml2246pbf.pdf
IRLML2246TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 495 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
22+18.2 грн
26+ 14.33 грн
33+ 11.46 грн
100+ 6.47 грн
171+ 5.07 грн
470+ 4.78 грн
Мінімальне замовлення: 22
IRLML2402TRPBF IRLML2402TRPBF.pdf
IRLML2402TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 0.54W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 0.54W
Case: SOT23
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Part status: Not recommended for new designs
на замовлення 7272 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
27+15.03 грн
31+ 12.05 грн
36+ 10.29 грн
50+ 8.82 грн
100+ 7.42 грн
174+ 4.97 грн
479+ 4.7 грн
Мінімальне замовлення: 27
IRLML2502TRPBF IRLML2502TRPBF.pdf
IRLML2502TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRLML2803TRPBF irlml2803.pdf
IRLML2803TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 3628 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
18+22.16 грн
25+ 14.92 грн
50+ 10.87 грн
100+ 9.48 грн
102+ 8.52 грн
279+ 8.08 грн
Мінімальне замовлення: 18
IRF2807PBF irf2807.pdf
IRF2807PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 106.7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+97.73 грн
10+ 83.77 грн
18+ 50.7 грн
47+ 47.76 грн
Мінімальне замовлення: 4
IRF2807STRLPBF irf2807spbf.pdf
IRF2807STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF2807STRRPBF irf2807spbf.pdf
IRF2807STRRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF2807ZPBF description irf2807z.pdf
IRF2807ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IR21844PBF description IR21844SPBF.pdf
IR21844PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+363.21 грн
3+ 303.47 грн
4+ 232.93 грн
11+ 220.43 грн
Мінімальне замовлення: 2
IR21844SPBF description IR21844SPBF.pdf
IR21844SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 161 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+227.1 грн
8+ 123.44 грн
20+ 116.1 грн
Мінімальне замовлення: 2
IR21844STRPBF IR21844SPBF.pdf
IR21844STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
товар відсутній
IR2184PBF IR21844SPBF.pdf
IR2184PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+175.67 грн
7+ 129.32 грн
19+ 122.71 грн
Мінімальне замовлення: 3
IR2184SPBF description IR21844SPBF.pdf
IR2184SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+219.19 грн
3+ 183.7 грн
7+ 142.55 грн
17+ 134.47 грн
Мінімальне замовлення: 2
IR2184STRPBF IR21844SPBF.pdf
IR2184STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
на замовлення 2673 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+232.64 грн
3+ 202.07 грн
8+ 108.01 грн
22+ 102.13 грн
Мінімальне замовлення: 2
BAT60AE6327HTSA1 BAT60AE6327-DTE.pdf
BAT60AE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 3A; SOD323; 1.35W
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
Type of diode: Schottky rectifying
Case: SOD323
на замовлення 2630 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
20+19.78 грн
28+ 13.3 грн
100+ 9.92 грн
148+ 5.88 грн
407+ 5.51 грн
Мінімальне замовлення: 20
BAT60BE6327HTSA1 BAT60BE6327HTSA1.pdf
BAT60BE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 3A; SOD323; 1.35W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 5A
Power dissipation: 1.35W
на замовлення 4752 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
14+29.28 грн
19+ 19.77 грн
30+ 12.64 грн
100+ 11.02 грн
140+ 6.1 грн
385+ 5.73 грн
Мінімальне замовлення: 14
IRFB260NPBF irfb260n.pdf
IRFB260NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+176.46 грн
9+ 98.46 грн
24+ 93.32 грн
Мінімальне замовлення: 3
IRS21844SPBF irs2184.pdf
IRS21844SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -2.3...1.9A
Number of channels: 2
Case: SO14
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
товар відсутній
BTS452R BTS452R-DTE.pdf
BTS452R
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 0.2Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Output voltage: 62V
товар відсутній
IRF6648TRPBF irf6648pbf.pdf
IRF6648TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BAV70SH6327XTSA1 BAV70E6327HTSA1.pdf
BAV70SH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
44+9.18 грн
70+ 5.28 грн
201+ 4.3 грн
553+ 4.06 грн
1000+ 4.05 грн
Мінімальне замовлення: 44
BAV99SH6327XTSA1 BAV99SH6327XTSA1.pdf
BAV99SH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
22+18.2 грн
29+ 12.71 грн
36+ 10.21 грн
100+ 7.27 грн
199+ 4.34 грн
547+ 4.11 грн
Мінімальне замовлення: 22
IRS2092STRPBF IRS2092.pdf
IRS2092STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
товар відсутній
IPI180N10N3GXKSA1 IPI180N10N3G-DTE.pdf
IPI180N10N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 483 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+88.63 грн
6+ 71.27 грн
18+ 49.97 грн
48+ 47.03 грн
Мінімальне замовлення: 5
IPP180N10N3GXKSA1 IPP180N10N3G-dte.pdf
IPP180N10N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRF7413TRPBF description irf7413pbf.pdf
IRF7413TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7413ZTRPBF description irf7413zpbf.pdf
IRF7413ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 13A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
на замовлення 940 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+60.14 грн
10+ 47.98 грн
40+ 22.12 грн
108+ 20.87 грн
Мінімальне замовлення: 7
IRS20752LTRPBF IRS20752ltrpbf.pdf
IRS20752LTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 255ns
Supply voltage: 10...18V DC
Turn-on time: 225ns
Operating temperature: -40...125°C
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 200V
товар відсутній
IRFP064NPBF irfp064n.pdf
IRFP064NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+147.97 грн
5+ 124.91 грн
9+ 106.54 грн
23+ 100.67 грн
Мінімальне замовлення: 3
IRS2453DSPBF description irs2453d.pdf
IRS2453DSPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
товар відсутній
IRFP3206PBF irfp3206pbf.pdf
IRFP3206PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+212.07 грн
5+ 181.49 грн
10+ 171.94 грн
Мінімальне замовлення: 2
IRLML5103TRPBF irlml5103pbf.pdf
IRLML5103TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRF3415PBF irf3415.pdf
IRF3415PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+125.82 грн
10+ 108.01 грн
12+ 72.74 грн
33+ 68.33 грн
Мінімальне замовлення: 4
IRF3415STRLPBF irf3415spbf.pdf
IRF3415STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFP150MPBF irfp150mpbf.pdf
IRFP150MPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+143.23 грн
5+ 119.77 грн
Мінімальне замовлення: 3
IRFP150NPBF description irfp150n.pdf
IRFP150NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRFP054NPBF irfp054n.pdf
IRFP054NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 620 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+192.29 грн
5+ 161.65 грн
7+ 128.59 грн
19+ 121.24 грн
Мінімальне замовлення: 3
BCP5216H6327XTSA1 BCP5216H6327XTSA1.pdf
BCP5216H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Collector current: 1A
Frequency: 125MHz
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
товар відсутній
BSZ097N04LSGATMA1 BSZ097N04LSG-DTE.pdf
BSZ097N04LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
на замовлення 4970 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+60.14 грн
12+ 33.07 грн
25+ 29.17 грн
35+ 25.28 грн
94+ 23.88 грн
1000+ 23.59 грн
Мінімальне замовлення: 7
ICE3A1565FKLA1 ICE3A_B_ser.pdf
ICE3A1565FKLA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 6.1A; 100kHz; Ch: 1; DIP8; flyback; 0÷72%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 6.1A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...72%
Power: 42/20W
Application: SMPS
Operating voltage: 8.5...21V
товар відсутній
ICE3A2065ELJFKLA1 ICE3A2065ELJ.pdf
ICE3A2065ELJFKLA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 10.3A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V
товар відсутній
ICE3AR0680JZXKLA1 ICE3AR0680JZ.pdf
ICE3AR0680JZXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 20A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V
товар відсутній
SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+155.89 грн
10+ 91.85 грн
26+ 86.7 грн
Мінімальне замовлення: 3
BF5030WH6327XTSA1 BF5030.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 25mA; 200mW; SOT343; SMT
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 8V
Drain current: 25mA
Power dissipation: 0.2W
Case: SOT343
Gate-source voltage: ±6V
Kind of package: reel; tape
Frequency: 800MHz
Kind of channel: depleted
Features of semiconductor devices: dual gate
Electrical mounting: SMT
Open-loop gain: 24dB
товар відсутній
SPW35N60C3 SPW35N60C3.pdf
SPW35N60C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+939.28 грн
2+ 760.5 грн
3+ 759.77 грн
4+ 718.62 грн
30+ 689.96 грн
IRFP3306PBF description irfp3306pbf.pdf
IRFP3306PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+208.9 грн
8+ 109.48 грн
22+ 103.6 грн
25+ 102.87 грн
Мінімальне замовлення: 2
IRFP4127PBF IRFP4127PBF.pdf
IRFP4127PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 53A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 53A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+297.53 грн
6+ 169 грн
14+ 159.45 грн
Мінімальне замовлення: 2
IRG7PH35UD-EP irg7ph35udpbf.pdf
IRG7PH35UD-EP
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 240ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRFP4468PBF irfp4468pbf.pdf
IRFP4468PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+639.37 грн
2+ 454.83 грн
3+ 454.1 грн
6+ 429.85 грн
IRF7809AVTRPBF description irf7809avpbf.pdf
IRF7809AVTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.3A; 2.5W; SO8
Kind of package: reel
Drain-source voltage: 30V
Drain current: 13.3A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: SO8
товар відсутній
IRFB4227PBF irfb4227pbf.pdf
IRFB4227PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRLML6402TRPBF IRLML6402TRPBF.pdf
IRLML6402TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 12124 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+26.9 грн
19+ 19.4 грн
22+ 16.9 грн
50+ 12.2 грн
100+ 10.73 грн
153+ 5.66 грн
420+ 5.36 грн
Мінімальне замовлення: 15
BSC100N03MSGATMA1 BSC100N03MSG-DTE.pdf
BSC100N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
BSC100N06LS3GATMA1 BSC100N06LS3G.pdf
BSC100N06LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 3645 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+96.54 грн
7+ 52.76 грн
22+ 39.75 грн
59+ 37.62 грн
Мінімальне замовлення: 5
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