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IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 483 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
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5+ | 88.31 грн |
6+ | 71.02 грн |
18+ | 49.79 грн |
48+ | 46.86 грн |
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Технічний опис IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 100V 43A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 33µA, Supplier Device Package: PG-TO262-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V.
Інші пропозиції IPI180N10N3GXKSA1 за ціною від 55.35 грн до 105.97 грн
Фото | Назва | Виробник | Інформація |
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IPI180N10N3GXKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Power dissipation: 71W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 483 шт: термін постачання 14-21 дні (днів) |
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IPI180N10N3GXKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPI180N10N3GXKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TO262-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
товар відсутній |