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IRF1010EZPBF IRF1010EZPBF INFINEON TECHNOLOGIES irf1010ez.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
5+85.46 грн
10+ 69.66 грн
21+ 43.06 грн
Мінімальне замовлення: 5
IRF1010NPBF IRF1010NPBF INFINEON TECHNOLOGIES irf1010n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
5+93.37 грн
10+ 74.21 грн
18+ 49.97 грн
Мінімальне замовлення: 5
IRF1010NSTRLPBF IRF1010NSTRLPBF INFINEON TECHNOLOGIES irf1010nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF1010ZSTRL AUIRF1010ZSTRL INFINEON TECHNOLOGIES auirf1010z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BSP452  BSP452  INFINEON TECHNOLOGIES BSP452.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
на замовлення 4989 шт:
термін постачання 21-30 дні (днів)
3+140.06 грн
5+ 116.1 грн
9+ 100.67 грн
24+ 94.79 грн
500+ 93.32 грн
4000+ 91.11 грн
Мінімальне замовлення: 3
IGCM15F60GA IGCM15F60GA INFINEON TECHNOLOGIES IGCM15F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+826.91 грн
2+ 525.37 грн
XMC4700 RELAX KIT XMC4700 RELAX KIT INFINEON TECHNOLOGIES xmc4700_4800.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of connector: pin strips; RJ45; USB B micro x2
Application: building automation; CAV; motors; photovoltaics
Number of add-on connectors: 1
Kind of architecture: Cortex M4
товар відсутній
XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES xmc4700_4800.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; extension board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
товар відсутній
IRFB4110GPBF IRFB4110GPBF INFINEON TECHNOLOGIES IRFB4110GPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRFB4110PBF IRFB4110PBF INFINEON TECHNOLOGIES irfb4110pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IR2153DPBF IR2153DPBF INFINEON TECHNOLOGIES IR2153DPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
3+132.26 грн
9+ 101.4 грн
24+ 95.52 грн
Мінімальне замовлення: 3
IRS2153DPBF IRS2153DPBF INFINEON TECHNOLOGIES irs2153d.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Power: 1W
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
2+216.82 грн
3+ 182.96 грн
7+ 130.79 грн
19+ 123.44 грн
Мінімальне замовлення: 2
IRS2153DSPBF IRS2153DSPBF INFINEON TECHNOLOGIES irs2153d.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
3+163.01 грн
5+ 133.73 грн
8+ 117.57 грн
21+ 110.95 грн
Мінімальне замовлення: 3
IKP10N60TXKSA1 IKP10N60TXKSA1 INFINEON TECHNOLOGIES IKP10N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
4+101.4 грн
9+ 96.99 грн
10+ 93.32 грн
Мінімальне замовлення: 4
IGP30N60H3XKSA1 IGP30N60H3XKSA1 INFINEON TECHNOLOGIES IGP30N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
на замовлення 172 шт:
термін постачання 21-30 дні (днів)
2+250.05 грн
3+ 194.72 грн
7+ 134.47 грн
18+ 127.12 грн
Мінімальне замовлення: 2
IRF1404LPBF IRF1404LPBF INFINEON TECHNOLOGIES irf1404spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhanced
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
3+180.42 грн
9+ 96.26 грн
25+ 91.11 грн
Мінімальне замовлення: 3
IRF1404PBF IRF1404PBF INFINEON TECHNOLOGIES irf1404.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
4+99.7 грн
10+ 75.68 грн
12+ 74.95 грн
32+ 70.54 грн
50+ 68.33 грн
Мінімальне замовлення: 4
IRF1404STRLPBF IRF1404STRLPBF INFINEON TECHNOLOGIES irf1404spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF1404STRRPBF IRF1404STRRPBF INFINEON TECHNOLOGIES irf1404spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF1404ZPBF IRF1404ZPBF INFINEON TECHNOLOGIES irf1404z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
5+81.56 грн
10+ 72.74 грн
14+ 62.46 грн
38+ 59.52 грн
Мінімальне замовлення: 5
IRF1404ZSTRLPBF IRF1404ZSTRLPBF INFINEON TECHNOLOGIES IRF1404ZSTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF1404 AUIRF1404 INFINEON TECHNOLOGIES auirf1404.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 202A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 202A
Power dissipation: 333W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
AUIRF1404S AUIRF1404S INFINEON TECHNOLOGIES auirf1404s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
товар відсутній
AUIRF1404STRL AUIRF1404STRL INFINEON TECHNOLOGIES auirf1404s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF1404ZSTRL AUIRF1404ZSTRL INFINEON TECHNOLOGIES auirf1404z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
TLE4905LHALA1 TLE4905LHALA1 INFINEON TECHNOLOGIES TLE49x5L.PDF Category: Hall Sensors
Description: Sensor: Hall; unipolar; P-SSO-3-2; 5÷18mT; Usup: 3.8÷24VDC; THT
Operating temperature: -40...150°C
Mounting: THT
Kind of sensor: unipolar
Type of sensor: Hall
Range of detectable magnetic field: 5...18mT
Case: P-SSO-3-2
Supply voltage: 3.8...24V DC
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
4+107.62 грн
6+ 88.91 грн
12+ 75.68 грн
32+ 72.01 грн
120+ 71.27 грн
Мінімальне замовлення: 4
TLE4945L TLE4945L INFINEON TECHNOLOGIES TLE49x5L.PDF Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Mounting: THT
Case: P-SSO-3-2
Operating temperature: -40...150°C
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Kind of sensor: bipolar
Type of sensor: Hall
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
5+74.21 грн
16+ 55.84 грн
43+ 52.17 грн
Мінімальне замовлення: 5
XMC4800E196F1024AAXQMA1 XMC4800E196F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196F1536AAXQMA1 XMC4800E196F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196F2048AAXQMA1 XMC4800E196F2048AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196K1024AAXQMA1 XMC4800E196K1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196K1536AAXQMA1 XMC4800E196K1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196K2048AAXQMA1 XMC4800E196K2048AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800F100F1024AAXQMA1 XMC4800F100F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 64kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800F100F1536AAXQMA1 XMC4800F100F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 64kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800F100F2048AAXQMA1 XMC4800F100F2048AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800F100K1536AAXQMA1 XMC4800F100K1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 18
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-100
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
товар відсутній
IRL1404STRLPBF IRL1404STRLPBF INFINEON TECHNOLOGIES IRL1404STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL1404ZPBF IRL1404ZPBF INFINEON TECHNOLOGIES irl1404zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL1404ZSTRLPBF IRL1404ZSTRLPBF INFINEON TECHNOLOGIES irl1404xxPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1145 шт:
термін постачання 21-30 дні (днів)
3+134.52 грн
5+ 112.42 грн
11+ 85.97 грн
28+ 81.56 грн
Мінімальне замовлення: 3
AUIRL1404ZSTRL AUIRL1404ZSTRL INFINEON TECHNOLOGIES auirl1404s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
IPA65R065C7XKSA1 IPA65R065C7XKSA1 INFINEON TECHNOLOGIES IPA65R065C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP
Technology: CoolMOS™
Case: TO220FP
Mounting: THT
On-state resistance: 65mΩ
Kind of package: tube
Power dissipation: 34W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 15A
товар відсутній
IRF520NPBF IRF520NPBF INFINEON TECHNOLOGIES irf520n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRF520NSTRLPBF IRF520NSTRLPBF INFINEON TECHNOLOGIES irf520nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 47W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Power dissipation: 47W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF540NPBF IRF540NPBF INFINEON TECHNOLOGIES irf540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 47.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1562 шт:
термін постачання 21-30 дні (днів)
8+55.39 грн
10+ 37.69 грн
12+ 32.26 грн
29+ 30.35 грн
50+ 30.05 грн
79+ 28.73 грн
250+ 27.92 грн
500+ 27.63 грн
Мінімальне замовлення: 8
IGP20N65F5XKSA1 IGP20N65F5XKSA1 INFINEON TECHNOLOGIES IGP20N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 42A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
3+143.23 грн
4+ 118.3 грн
9+ 106.54 грн
10+ 105.81 грн
23+ 100.67 грн
25+ 98.46 грн
Мінімальне замовлення: 3
IGP20N65H5XKSA1 IGP20N65H5XKSA1 INFINEON TECHNOLOGIES IGP20N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 169ns
товар відсутній
IKP20N65F5XKSA1 IKP20N65F5XKSA1 INFINEON TECHNOLOGIES IKP20N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKP20N65H5XKSA1 IKP20N65H5XKSA1 INFINEON TECHNOLOGIES IKP20N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
3+158.71 грн
7+ 137.4 грн
18+ 130.06 грн
Мінімальне замовлення: 3
SPP20N60CFD SPP20N60CFD INFINEON TECHNOLOGIES SPP20N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
SPP20N60S5 SPP20N60S5 INFINEON TECHNOLOGIES SPP20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
1+526.22 грн
3+ 338 грн
8+ 319.63 грн
SPP20N65C3 SPP20N65C3 INFINEON TECHNOLOGIES SPx20N65C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+423.35 грн
3+ 293.91 грн
9+ 277.75 грн
IRF3205PBF IRF3205PBF INFINEON TECHNOLOGIES irf3205.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1298 шт:
термін постачання 21-30 дні (днів)
5+97.33 грн
10+ 77.15 грн
18+ 48.5 грн
50+ 45.56 грн
Мінімальне замовлення: 5
IRF3205STRLPBF IRF3205STRLPBF INFINEON TECHNOLOGIES irf3205spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 375 шт:
термін постачання 21-30 дні (днів)
7+63.3 грн
10+ 52.9 грн
19+ 46.29 грн
52+ 43.35 грн
250+ 42.62 грн
Мінімальне замовлення: 7
IRF3205STRRPBF IRF3205STRRPBF INFINEON TECHNOLOGIES irf3205spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF3205ZLPBF IRF3205ZLPBF INFINEON TECHNOLOGIES irf3205zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
4+106.03 грн
5+ 88.91 грн
10+ 77.89 грн
13+ 67.6 грн
Мінімальне замовлення: 4
IRF3205ZPBF IRF3205ZPBF INFINEON TECHNOLOGIES irf3205zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 957 шт:
термін постачання 21-30 дні (днів)
4+104.45 грн
10+ 79.36 грн
16+ 54.37 грн
44+ 51.43 грн
Мінімальне замовлення: 4
IRF3205ZSTRLPBF IRF3205ZSTRLPBF INFINEON TECHNOLOGIES irf3205zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhanced
на замовлення 357 шт:
термін постачання 21-30 дні (днів)
4+110.78 грн
10+ 84.5 грн
18+ 50.7 грн
47+ 47.76 грн
Мінімальне замовлення: 4
AUIRF3205Z AUIRF3205Z INFINEON TECHNOLOGIES auirf3205z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
2N7002DWH6327XTSA1 2N7002DWH6327XTSA1 INFINEON TECHNOLOGIES 2N7002DWH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 5730 шт:
термін постачання 21-30 дні (днів)
36+11.08 грн
41+ 9.11 грн
62+ 6 грн
100+ 5.28 грн
267+ 3.24 грн
732+ 3.06 грн
Мінімальне замовлення: 36
IRF1010EZPBF description irf1010ez.pdf
IRF1010EZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+85.46 грн
10+ 69.66 грн
21+ 43.06 грн
Мінімальне замовлення: 5
IRF1010NPBF description irf1010n.pdf
IRF1010NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+93.37 грн
10+ 74.21 грн
18+ 49.97 грн
Мінімальне замовлення: 5
IRF1010NSTRLPBF irf1010nspbf.pdf
IRF1010NSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF1010ZSTRL auirf1010z.pdf
AUIRF1010ZSTRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BSP452  BSP452.pdf
BSP452 
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
на замовлення 4989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+140.06 грн
5+ 116.1 грн
9+ 100.67 грн
24+ 94.79 грн
500+ 93.32 грн
4000+ 91.11 грн
Мінімальне замовлення: 3
IGCM15F60GA IGCM15F60GA.pdf
IGCM15F60GA
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+826.91 грн
2+ 525.37 грн
XMC4700 RELAX KIT xmc4700_4800.pdf
XMC4700 RELAX KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of connector: pin strips; RJ45; USB B micro x2
Application: building automation; CAV; motors; photovoltaics
Number of add-on connectors: 1
Kind of architecture: Cortex M4
товар відсутній
XMC4800 RELAX ETHERCAT KIT xmc4700_4800.pdf
XMC4800 RELAX ETHERCAT KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; extension board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
товар відсутній
IRFB4110GPBF IRFB4110GPBF.pdf
IRFB4110GPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRFB4110PBF irfb4110pbf.pdf
IRFB4110PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IR2153DPBF description IR2153DPBF.pdf
IR2153DPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+132.26 грн
9+ 101.4 грн
24+ 95.52 грн
Мінімальне замовлення: 3
IRS2153DPBF description irs2153d.pdf
IRS2153DPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Power: 1W
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+216.82 грн
3+ 182.96 грн
7+ 130.79 грн
19+ 123.44 грн
Мінімальне замовлення: 2
IRS2153DSPBF description irs2153d.pdf
IRS2153DSPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+163.01 грн
5+ 133.73 грн
8+ 117.57 грн
21+ 110.95 грн
Мінімальне замовлення: 3
IKP10N60TXKSA1 IKP10N60T.pdf
IKP10N60TXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+101.4 грн
9+ 96.99 грн
10+ 93.32 грн
Мінімальне замовлення: 4
IGP30N60H3XKSA1 IGP30N60H3-DTE.pdf
IGP30N60H3XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
на замовлення 172 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+250.05 грн
3+ 194.72 грн
7+ 134.47 грн
18+ 127.12 грн
Мінімальне замовлення: 2
IRF1404LPBF irf1404spbf.pdf
IRF1404LPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhanced
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+180.42 грн
9+ 96.26 грн
25+ 91.11 грн
Мінімальне замовлення: 3
IRF1404PBF irf1404.pdf
IRF1404PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+99.7 грн
10+ 75.68 грн
12+ 74.95 грн
32+ 70.54 грн
50+ 68.33 грн
Мінімальне замовлення: 4
IRF1404STRLPBF irf1404spbf.pdf
IRF1404STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF1404STRRPBF irf1404spbf.pdf
IRF1404STRRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF1404ZPBF irf1404z.pdf
IRF1404ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+81.56 грн
10+ 72.74 грн
14+ 62.46 грн
38+ 59.52 грн
Мінімальне замовлення: 5
IRF1404ZSTRLPBF IRF1404ZSTRLPBF.pdf
IRF1404ZSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF1404 auirf1404.pdf
AUIRF1404
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 202A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 202A
Power dissipation: 333W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
AUIRF1404S auirf1404s.pdf
AUIRF1404S
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
товар відсутній
AUIRF1404STRL auirf1404s.pdf
AUIRF1404STRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF1404ZSTRL auirf1404z.pdf
AUIRF1404ZSTRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
TLE4905LHALA1 TLE49x5L.PDF
TLE4905LHALA1
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; P-SSO-3-2; 5÷18mT; Usup: 3.8÷24VDC; THT
Operating temperature: -40...150°C
Mounting: THT
Kind of sensor: unipolar
Type of sensor: Hall
Range of detectable magnetic field: 5...18mT
Case: P-SSO-3-2
Supply voltage: 3.8...24V DC
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+107.62 грн
6+ 88.91 грн
12+ 75.68 грн
32+ 72.01 грн
120+ 71.27 грн
Мінімальне замовлення: 4
TLE4945L TLE49x5L.PDF
TLE4945L
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Mounting: THT
Case: P-SSO-3-2
Operating temperature: -40...150°C
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Kind of sensor: bipolar
Type of sensor: Hall
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+74.21 грн
16+ 55.84 грн
43+ 52.17 грн
Мінімальне замовлення: 5
XMC4800E196F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196F1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196F1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196F2048AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196F2048AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196K1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196K1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196K1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196K1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800E196K2048AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196K2048AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
товар відсутній
XMC4800F100F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F100F1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 64kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800F100F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F100F1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 64kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 64kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800F100F2048AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F100F2048AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
XMC4800F100K1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F100K1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 18
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-100
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
товар відсутній
IRL1404STRLPBF IRL1404STRLPBF.pdf
IRL1404STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL1404ZPBF irl1404zpbf.pdf
IRL1404ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL1404ZSTRLPBF irl1404xxPBF.pdf
IRL1404ZSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1145 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+134.52 грн
5+ 112.42 грн
11+ 85.97 грн
28+ 81.56 грн
Мінімальне замовлення: 3
AUIRL1404ZSTRL auirl1404s.pdf
AUIRL1404ZSTRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
IPA65R065C7XKSA1 IPA65R065C7-DTE.pdf
IPA65R065C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP
Technology: CoolMOS™
Case: TO220FP
Mounting: THT
On-state resistance: 65mΩ
Kind of package: tube
Power dissipation: 34W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 15A
товар відсутній
IRF520NPBF irf520n.pdf
IRF520NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRF520NSTRLPBF irf520nspbf.pdf
IRF520NSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 47W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Power dissipation: 47W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF540NPBF irf540n.pdf
IRF540NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 47.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1562 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+55.39 грн
10+ 37.69 грн
12+ 32.26 грн
29+ 30.35 грн
50+ 30.05 грн
79+ 28.73 грн
250+ 27.92 грн
500+ 27.63 грн
Мінімальне замовлення: 8
IGP20N65F5XKSA1 IGP20N65F5-DTE.pdf
IGP20N65F5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 42A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+143.23 грн
4+ 118.3 грн
9+ 106.54 грн
10+ 105.81 грн
23+ 100.67 грн
25+ 98.46 грн
Мінімальне замовлення: 3
IGP20N65H5XKSA1 IGP20N65H5.pdf
IGP20N65H5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 169ns
товар відсутній
IKP20N65F5XKSA1 IKP20N65F5.pdf
IKP20N65F5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKP20N65H5XKSA1 IKP20N65H5-DTE.pdf
IKP20N65H5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+158.71 грн
7+ 137.4 грн
18+ 130.06 грн
Мінімальне замовлення: 3
SPP20N60CFD SPP20N60CFD.pdf
SPP20N60CFD
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
SPP20N60S5 description SPP20N60S5.pdf
SPP20N60S5
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+526.22 грн
3+ 338 грн
8+ 319.63 грн
SPP20N65C3 SPx20N65C3.pdf
SPP20N65C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+423.35 грн
3+ 293.91 грн
9+ 277.75 грн
IRF3205PBF irf3205.pdf
IRF3205PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+97.33 грн
10+ 77.15 грн
18+ 48.5 грн
50+ 45.56 грн
Мінімальне замовлення: 5
IRF3205STRLPBF irf3205spbf.pdf
IRF3205STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 375 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+63.3 грн
10+ 52.9 грн
19+ 46.29 грн
52+ 43.35 грн
250+ 42.62 грн
Мінімальне замовлення: 7
IRF3205STRRPBF irf3205spbf.pdf
IRF3205STRRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF3205ZLPBF irf3205zpbf.pdf
IRF3205ZLPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+106.03 грн
5+ 88.91 грн
10+ 77.89 грн
13+ 67.6 грн
Мінімальне замовлення: 4
IRF3205ZPBF description irf3205zpbf.pdf
IRF3205ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 957 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+104.45 грн
10+ 79.36 грн
16+ 54.37 грн
44+ 51.43 грн
Мінімальне замовлення: 4
IRF3205ZSTRLPBF irf3205zpbf.pdf
IRF3205ZSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhanced
на замовлення 357 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+110.78 грн
10+ 84.5 грн
18+ 50.7 грн
47+ 47.76 грн
Мінімальне замовлення: 4
AUIRF3205Z auirf3205z.pdf
AUIRF3205Z
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
2N7002DWH6327XTSA1 2N7002DWH6327XTSA1.pdf
2N7002DWH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 5730 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
36+11.08 грн
41+ 9.11 грн
62+ 6 грн
100+ 5.28 грн
267+ 3.24 грн
732+ 3.06 грн
Мінімальне замовлення: 36
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