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BC857CE6327 BC857CE6327 INFINEON TECHNOLOGIES BC857SH6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)
75+5.46 грн
115+ 3.3 грн
250+ 2.92 грн
320+ 2.7 грн
875+ 2.56 грн
Мінімальне замовлення: 75
TLE42754DATMA1 TLE42754DATMA1 INFINEON TECHNOLOGIES Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...42V
товар відсутній
TLE42712GATMA1 TLE42712GATMA1 INFINEON TECHNOLOGIES TLE4271-2G.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 6...40V
товар відсутній
TLE42744DV50ATMA1 TLE42744DV50ATMA1 INFINEON TECHNOLOGIES TLE42744.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...40V
товар відсутній
TLE42764DVATMA1 TLE42764DVATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.5...40V
товар відсутній
TLE42764DV50ATMA1 TLE42764DV50ATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.5...41V
товар відсутній
TLE42764GVATMA1 TLE42764GVATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.5...41V
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
4+119.49 грн
5+ 98.46 грн
11+ 81.56 грн
29+ 77.15 грн
Мінімальне замовлення: 4
TLE42764GV50ATMA1 TLE42764GV50ATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.5...41V
товар відсутній
BC847BE6327HTSA1 BC847BE6327HTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1060 шт:
термін постачання 21-30 дні (днів)
120+3.1 грн
360+ 2.38 грн
1000+ 2.26 грн
Мінімальне замовлення: 120
BC847BE6433HTMA1 BC847BE6433HTMA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 3620 шт:
термін постачання 21-30 дні (днів)
140+3.09 грн
160+ 2.58 грн
420+ 2.09 грн
1140+ 1.98 грн
Мінімальне замовлення: 140
BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAT54SERIES-DS-v01_01-en.pdf BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 4682 шт:
термін постачання 21-30 дні (днів)
36+11.08 грн
59+ 6.32 грн
68+ 5.44 грн
100+ 4.81 грн
258+ 3.35 грн
710+ 3.17 грн
Мінімальне замовлення: 36
BAT5403WE6327HTSA1 BAT5403WE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BAT54SERIES-DS-v01_01-en.pdf BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD323; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 4485 шт:
термін постачання 21-30 дні (днів)
21+18.99 грн
30+ 12.64 грн
37+ 10.05 грн
50+ 9.01 грн
205+ 4.23 грн
562+ 4 грн
3000+ 3.91 грн
Мінімальне замовлення: 21
BAT5404E6327HTSA1 BAT5404E6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 2625 шт:
термін постачання 21-30 дні (днів)
21+18.99 грн
31+ 12.2 грн
40+ 9.35 грн
100+ 6.14 грн
241+ 3.59 грн
662+ 3.4 грн
Мінімальне замовлення: 21
BAT5404WH6327XTSA1 BAT5404WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT323
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
товар відсутній
BAT5405E6327HTSA1 BAT5405E6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 4555 шт:
термін постачання 21-30 дні (днів)
18+22.16 грн
27+ 13.67 грн
31+ 11.9 грн
36+ 10.43 грн
50+ 8.7 грн
100+ 7.55 грн
203+ 4.28 грн
556+ 4.04 грн
3000+ 3.9 грн
Мінімальне замовлення: 18
BAT5405WH6327XTSA1 BAT5405WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT323
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
товар відсутній
BAT5406WH6327XTSA1 BAT5406WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Case: SOT323
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 323 шт:
термін постачання 21-30 дні (днів)
216+1.84 грн
243+ 1.51 грн
261+ 1.41 грн
Мінімальне замовлення: 216
IKD03N60RFATMA1 IKD03N60RFATMA1 INFINEON TECHNOLOGIES IKD03N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 53.6W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 7.5A
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Turn-on time: 17ns
Turn-off time: 265ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
SPD03N60C3ATMA1 INFINEON TECHNOLOGIES SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
SPU03N60C3BKMA1 SPU03N60C3BKMA1 INFINEON TECHNOLOGIES SP_03N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 980 шт:
термін постачання 21-30 дні (днів)
7+59.35 грн
8+ 48.79 грн
21+ 42.62 грн
56+ 39.68 грн
500+ 38.58 грн
Мінімальне замовлення: 7
IR2101PBF IR2101PBF INFINEON TECHNOLOGIES ir2101.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
2+256.38 грн
8+ 118.3 грн
Мінімальне замовлення: 2
IR2101SPBF IR2101SPBF INFINEON TECHNOLOGIES IR2101SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
на замовлення 546 шт:
термін постачання 21-30 дні (днів)
4+113.16 грн
5+ 95.52 грн
13+ 69.8 грн
35+ 66.13 грн
Мінімальне замовлення: 4
IR2101STRPBF IR2101STRPBF INFINEON TECHNOLOGIES IR2101SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
на замовлення 3238 шт:
термін постачання 21-30 дні (днів)
4+106.83 грн
16+ 56.58 грн
42+ 53.64 грн
1000+ 51.43 грн
Мінімальне замовлення: 4
IRF7401TRPBF IRF7401TRPBF INFINEON TECHNOLOGIES irf7401pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7403TRPBF IRF7403TRPBF INFINEON TECHNOLOGIES irf7403pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7404TRPBF IRF7404TRPBF INFINEON TECHNOLOGIES irf7404pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7406TRPBF IRF7406TRPBF INFINEON TECHNOLOGIES irf7406pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IR21531DPBF IR21531DPBF INFINEON TECHNOLOGIES IR21531SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
товар відсутній
IR21531PBF IR21531PBF INFINEON TECHNOLOGIES ir21531.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
3+145.49 грн
8+ 121.24 грн
20+ 114.63 грн
250+ 110.22 грн
Мінімальне замовлення: 3
IR21531SPBF IR21531SPBF INFINEON TECHNOLOGIES IR21531SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Operating temperature: -40...125°C
Power: 625mW
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
товар відсутній
IR2153PBF IR2153PBF INFINEON TECHNOLOGIES ir2153.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
3+123.44 грн
10+ 94.05 грн
26+ 88.91 грн
Мінімальне замовлення: 3
IR2153SPBF IR2153SPBF INFINEON TECHNOLOGIES ir2153.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Operating temperature: -40...125°C
Power: 625mW
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
4+127.4 грн
5+ 105.07 грн
11+ 82.3 грн
29+ 77.89 грн
Мінімальне замовлення: 4
IR2153STRPBF IR2153STRPBF INFINEON TECHNOLOGIES IR2153DPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Operating temperature: -40...125°C
Power: 625mW
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
товар відсутній
BTS740S2 BTS740S2 INFINEON TECHNOLOGIES BTS740S2.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
1+426.51 грн
3+ 315.22 грн
8+ 298.32 грн
100+ 293.18 грн
IRLL014NTRPBF IRLL014NTRPBF INFINEON TECHNOLOGIES irll014npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Polarisation: unipolar
Power dissipation: 2.1W
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: SOT223
Drain-source voltage: 55V
Drain current: 2A
Type of transistor: N-MOSFET
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
10+42.73 грн
11+ 33.58 грн
50+ 27.19 грн
57+ 15.14 грн
157+ 14.33 грн
Мінімальне замовлення: 10
IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES irll024n.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1571 шт:
термін постачання 21-30 дні (днів)
8+53.81 грн
45+ 19.25 грн
124+ 18.22 грн
Мінімальне замовлення: 8
IRLL024ZTRPBF IRLL024ZTRPBF INFINEON TECHNOLOGIES irll024zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhanced
на замовлення 2758 шт:
термін постачання 21-30 дні (днів)
4+99.7 грн
10+ 40.27 грн
25+ 36.15 грн
32+ 27.7 грн
86+ 26.16 грн
Мінімальне замовлення: 4
IRLL2703TRPBF IRLL2703TRPBF INFINEON TECHNOLOGIES IRSDS06555-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES irll2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 922 шт:
термін постачання 21-30 дні (днів)
7+57.77 грн
10+ 44.9 грн
37+ 23.59 грн
100+ 22.26 грн
Мінімальне замовлення: 7
IRLZ24NPBF IRLZ24NPBF INFINEON TECHNOLOGIES Infineon-IRLZ24N-DataSheet-v01_01-EN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 166 шт:
термін постачання 21-30 дні (днів)
7+56.97 грн
10+ 45.7 грн
35+ 25.28 грн
94+ 23.88 грн
Мінімальне замовлення: 7
BC850BE6327 BC850BE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 5047 шт:
термін постачання 21-30 дні (днів)
65+6.25 грн
100+ 3.96 грн
250+ 3.5 грн
280+ 3.09 грн
770+ 2.92 грн
3000+ 2.83 грн
Мінімальне замовлення: 65
BC850CE6327 BC850CE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 718 шт:
термін постачання 21-30 дні (днів)
36+11.08 грн
44+ 8.52 грн
54+ 6.82 грн
100+ 5.96 грн
250+ 5.33 грн
281+ 3.08 грн
Мінімальне замовлення: 36
IRFR9024NTRLPBF IRFR9024NTRLPBF INFINEON TECHNOLOGIES irfr9024npbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFR9024NTRPBF IRFR9024NTRPBF INFINEON TECHNOLOGIES irfr9024npbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 13771 шт:
термін постачання 21-30 дні (днів)
7+59.35 грн
14+ 27.04 грн
25+ 22.04 грн
46+ 18.92 грн
100+ 18.88 грн
126+ 17.89 грн
500+ 17.56 грн
Мінімальне замовлення: 7
AUIRFR9024NTRL INFINEON TECHNOLOGIES INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
товар відсутній
IRL3705NPBF IRL3705NPBF INFINEON TECHNOLOGIES irl3705n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL3705NSTRLPBF IRL3705NSTRLPBF INFINEON TECHNOLOGIES irl3705nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL3705ZPBF IRL3705ZPBF INFINEON TECHNOLOGIES irl3705z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL3705ZSTRLPBF IRL3705ZSTRLPBF INFINEON TECHNOLOGIES IRL3705ZSTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRLB3034PBF IRLB3034PBF INFINEON TECHNOLOGIES irlb3034pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
2+204.95 грн
6+ 156.51 грн
16+ 147.69 грн
50+ 146.22 грн
Мінімальне замовлення: 2
IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES irlb3036pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 123 шт:
термін постачання 21-30 дні (днів)
2+273.79 грн
5+ 180.02 грн
14+ 169.73 грн
Мінімальне замовлення: 2
IRLB3813PBF IRLB3813PBF INFINEON TECHNOLOGIES irlb3813pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 30V
Drain current: 260A
On-state resistance: 1.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 57nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
товар відсутній
IRLB4030PBF IRLB4030PBF INFINEON TECHNOLOGIES irlb4030pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
2+270.63 грн
5+ 191.04 грн
Мінімальне замовлення: 2
IRLB4132PBF IRLB4132PBF INFINEON TECHNOLOGIES IRLB4132PbF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
7+60.93 грн
10+ 38.21 грн
25+ 34.02 грн
30+ 29.32 грн
Мінімальне замовлення: 7
IRLB8314PBF IRLB8314PBF INFINEON TECHNOLOGIES irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Power dissipation: 125W
Technology: HEXFET®
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 664A
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 2.4mΩ
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
7+65.68 грн
10+ 51.21 грн
31+ 28.29 грн
84+ 26.75 грн
Мінімальне замовлення: 7
IRLB8721PBF IRLB8721PBF INFINEON TECHNOLOGIES irlb8721pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
6+68.84 грн
10+ 50.48 грн
29+ 30.35 грн
79+ 28.73 грн
Мінімальне замовлення: 6
IRLB8748PBF IRLB8748PBF INFINEON TECHNOLOGIES irlb8748pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
6+66.47 грн
10+ 39.09 грн
33+ 26.53 грн
50+ 26.45 грн
90+ 25.06 грн
Мінімальне замовлення: 6
IRL7833PBF IRL7833PBF INFINEON TECHNOLOGIES irl7833pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
5+81.56 грн
10+ 72.74 грн
14+ 63.93 грн
37+ 60.99 грн
Мінімальне замовлення: 5
IRF7301TRPBF IRF7301TRPBF INFINEON TECHNOLOGIES irf7301pbf.pdf description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7303TRPBF IRF7303TRPBF INFINEON TECHNOLOGIES irf7303pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BC857CE6327 BC857SH6327.pdf
BC857CE6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.46 грн
115+ 3.3 грн
250+ 2.92 грн
320+ 2.7 грн
875+ 2.56 грн
Мінімальне замовлення: 75
TLE42754DATMA1 Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
TLE42754DATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...42V
товар відсутній
TLE42712GATMA1 TLE4271-2G.pdf
TLE42712GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 6...40V
товар відсутній
TLE42744DV50ATMA1 TLE42744.pdf
TLE42744DV50ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...40V
товар відсутній
TLE42764DVATMA1 TLE42764.pdf
TLE42764DVATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.5...40V
товар відсутній
TLE42764DV50ATMA1 TLE42764.pdf
TLE42764DV50ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.5...41V
товар відсутній
TLE42764GVATMA1 TLE42764.pdf
TLE42764GVATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.5...41V
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+119.49 грн
5+ 98.46 грн
11+ 81.56 грн
29+ 77.15 грн
Мінімальне замовлення: 4
TLE42764GV50ATMA1 TLE42764.pdf
TLE42764GV50ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.5...41V
товар відсутній
BC847BE6327HTSA1 bc847_8_9_bc850.pdf
BC847BE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1060 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
120+3.1 грн
360+ 2.38 грн
1000+ 2.26 грн
Мінімальне замовлення: 120
BC847BE6433HTMA1 bc847_8_9_bc850.pdf
BC847BE6433HTMA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 3620 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
140+3.09 грн
160+ 2.58 грн
420+ 2.09 грн
1140+ 1.98 грн
Мінімальне замовлення: 140
BAT5402VH6327XTSA1 Infineon-BAT54SERIES-DS-v01_01-en.pdf BAT5404E6327HTSA1.pdf
BAT5402VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 4682 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
36+11.08 грн
59+ 6.32 грн
68+ 5.44 грн
100+ 4.81 грн
258+ 3.35 грн
710+ 3.17 грн
Мінімальне замовлення: 36
BAT5403WE6327HTSA1 Infineon-BAT54SERIES-DS-v01_01-en.pdf BAT5404E6327HTSA1.pdf
BAT5403WE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD323; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 4485 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
21+18.99 грн
30+ 12.64 грн
37+ 10.05 грн
50+ 9.01 грн
205+ 4.23 грн
562+ 4 грн
3000+ 3.91 грн
Мінімальне замовлення: 21
BAT5404E6327HTSA1 BAT5404E6327HTSA1.pdf
BAT5404E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 2625 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
21+18.99 грн
31+ 12.2 грн
40+ 9.35 грн
100+ 6.14 грн
241+ 3.59 грн
662+ 3.4 грн
Мінімальне замовлення: 21
BAT5404WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5404WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Case: SOT323
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
товар відсутній
BAT5405E6327HTSA1 BAT5404E6327HTSA1.pdf
BAT5405E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 4555 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
18+22.16 грн
27+ 13.67 грн
31+ 11.9 грн
36+ 10.43 грн
50+ 8.7 грн
100+ 7.55 грн
203+ 4.28 грн
556+ 4.04 грн
3000+ 3.9 грн
Мінімальне замовлення: 18
BAT5405WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5405WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT323
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
товар відсутній
BAT5406WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5406WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Case: SOT323
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 323 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
216+1.84 грн
243+ 1.51 грн
261+ 1.41 грн
Мінімальне замовлення: 216
IKD03N60RFATMA1 IKD03N60RF.pdf
IKD03N60RFATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 53.6W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 7.5A
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Turn-on time: 17ns
Turn-off time: 265ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
SPU03N60C3BKMA1 SP_03N60C3.pdf
SPU03N60C3BKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 980 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+59.35 грн
8+ 48.79 грн
21+ 42.62 грн
56+ 39.68 грн
500+ 38.58 грн
Мінімальне замовлення: 7
IR2101PBF description ir2101.pdf
IR2101PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+256.38 грн
8+ 118.3 грн
Мінімальне замовлення: 2
IR2101SPBF description IR2101SPBF.pdf
IR2101SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
на замовлення 546 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+113.16 грн
5+ 95.52 грн
13+ 69.8 грн
35+ 66.13 грн
Мінімальне замовлення: 4
IR2101STRPBF description IR2101SPBF.pdf
IR2101STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
на замовлення 3238 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+106.83 грн
16+ 56.58 грн
42+ 53.64 грн
1000+ 51.43 грн
Мінімальне замовлення: 4
IRF7401TRPBF description irf7401pbf.pdf
IRF7401TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7403TRPBF irf7403pbf.pdf
IRF7403TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7404TRPBF description irf7404pbf.pdf
IRF7404TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7406TRPBF description irf7406pbf.pdf
IRF7406TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IR21531DPBF IR21531SPBF.pdf
IR21531DPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
товар відсутній
IR21531PBF description ir21531.pdf
IR21531PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+145.49 грн
8+ 121.24 грн
20+ 114.63 грн
250+ 110.22 грн
Мінімальне замовлення: 3
IR21531SPBF description IR21531SPBF.pdf
IR21531SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Operating temperature: -40...125°C
Power: 625mW
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
товар відсутній
IR2153PBF description ir2153.pdf
IR2153PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+123.44 грн
10+ 94.05 грн
26+ 88.91 грн
Мінімальне замовлення: 3
IR2153SPBF description ir2153.pdf
IR2153SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Operating temperature: -40...125°C
Power: 625mW
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+127.4 грн
5+ 105.07 грн
11+ 82.3 грн
29+ 77.89 грн
Мінімальне замовлення: 4
IR2153STRPBF description IR2153DPBF.pdf
IR2153STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Operating temperature: -40...125°C
Power: 625mW
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
товар відсутній
BTS740S2 description BTS740S2.pdf
BTS740S2
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+426.51 грн
3+ 315.22 грн
8+ 298.32 грн
100+ 293.18 грн
IRLL014NTRPBF description irll014npbf.pdf
IRLL014NTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Polarisation: unipolar
Power dissipation: 2.1W
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: SOT223
Drain-source voltage: 55V
Drain current: 2A
Type of transistor: N-MOSFET
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
10+42.73 грн
11+ 33.58 грн
50+ 27.19 грн
57+ 15.14 грн
157+ 14.33 грн
Мінімальне замовлення: 10
IRLL024NTRPBF description irll024n.pdf
IRLL024NTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1571 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+53.81 грн
45+ 19.25 грн
124+ 18.22 грн
Мінімальне замовлення: 8
IRLL024ZTRPBF irll024zpbf.pdf
IRLL024ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhanced
на замовлення 2758 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+99.7 грн
10+ 40.27 грн
25+ 36.15 грн
32+ 27.7 грн
86+ 26.16 грн
Мінімальне замовлення: 4
IRLL2703TRPBF IRSDS06555-1.pdf?t.download=true&u=5oefqw
IRLL2703TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRLL2705TRPBF irll2705pbf.pdf
IRLL2705TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 922 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+57.77 грн
10+ 44.9 грн
37+ 23.59 грн
100+ 22.26 грн
Мінімальне замовлення: 7
IRLZ24NPBF Infineon-IRLZ24N-DataSheet-v01_01-EN.pdf
IRLZ24NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 166 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+56.97 грн
10+ 45.7 грн
35+ 25.28 грн
94+ 23.88 грн
Мінімальне замовлення: 7
BC850BE6327 BC850BE6327.pdf
BC850BE6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 5047 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
65+6.25 грн
100+ 3.96 грн
250+ 3.5 грн
280+ 3.09 грн
770+ 2.92 грн
3000+ 2.83 грн
Мінімальне замовлення: 65
BC850CE6327 BC850BE6327.pdf
BC850CE6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 718 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
36+11.08 грн
44+ 8.52 грн
54+ 6.82 грн
100+ 5.96 грн
250+ 5.33 грн
281+ 3.08 грн
Мінімальне замовлення: 36
IRFR9024NTRLPBF irfr9024npbf.pdf
IRFR9024NTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFR9024NTRPBF description irfr9024npbf.pdf
IRFR9024NTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 13771 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+59.35 грн
14+ 27.04 грн
25+ 22.04 грн
46+ 18.92 грн
100+ 18.88 грн
126+ 17.89 грн
500+ 17.56 грн
Мінімальне замовлення: 7
AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
товар відсутній
IRL3705NPBF description irl3705n.pdf
IRL3705NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL3705NSTRLPBF irl3705nspbf.pdf
IRL3705NSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL3705ZPBF description irl3705z.pdf
IRL3705ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL3705ZSTRLPBF IRL3705ZSTRLPBF.pdf
IRL3705ZSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRLB3034PBF irlb3034pbf.pdf
IRLB3034PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+204.95 грн
6+ 156.51 грн
16+ 147.69 грн
50+ 146.22 грн
Мінімальне замовлення: 2
IRLB3036PBF irlb3036pbf.pdf
IRLB3036PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 123 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+273.79 грн
5+ 180.02 грн
14+ 169.73 грн
Мінімальне замовлення: 2
IRLB3813PBF irlb3813pbf.pdf
IRLB3813PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 30V
Drain current: 260A
On-state resistance: 1.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 57nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
товар відсутній
IRLB4030PBF irlb4030pbf.pdf
IRLB4030PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+270.63 грн
5+ 191.04 грн
Мінімальне замовлення: 2
IRLB4132PBF IRLB4132PbF.pdf
IRLB4132PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+60.93 грн
10+ 38.21 грн
25+ 34.02 грн
30+ 29.32 грн
Мінімальне замовлення: 7
IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
IRLB8314PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Power dissipation: 125W
Technology: HEXFET®
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 664A
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 2.4mΩ
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+65.68 грн
10+ 51.21 грн
31+ 28.29 грн
84+ 26.75 грн
Мінімальне замовлення: 7
IRLB8721PBF description irlb8721pbf.pdf
IRLB8721PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+68.84 грн
10+ 50.48 грн
29+ 30.35 грн
79+ 28.73 грн
Мінімальне замовлення: 6
IRLB8748PBF irlb8748pbf.pdf
IRLB8748PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+66.47 грн
10+ 39.09 грн
33+ 26.53 грн
50+ 26.45 грн
90+ 25.06 грн
Мінімальне замовлення: 6
IRL7833PBF irl7833pbf.pdf
IRL7833PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+81.56 грн
10+ 72.74 грн
14+ 63.93 грн
37+ 60.99 грн
Мінімальне замовлення: 5
IRF7301TRPBF description irf7301pbf.pdf
IRF7301TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7303TRPBF irf7303pbf.pdf
IRF7303TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
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