Інші пропозиції APT70GR120L
| Фото | Назва | Виробник | Інформація |
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APT70GR120L | Виробник : MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264 Mounting: THT Power dissipation: 961W Kind of package: tube Gate charge: 412nC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Turn-on time: 81ns Turn-off time: 394ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT70GR120L | Виробник : Microchip Technology |
Description: IGBT NPT 1200V 160A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A Supplier Device Package: TO-264 IGBT Type: NPT Td (on/off) @ 25°C: 33ns/278ns Switching Energy: 3.82mJ (on), 2.58mJ (off) Test Condition: 600V, 70A, 4.3Ohm, 15V Gate Charge: 544 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 280 A Power - Max: 961 W |
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| APT70GR120L | Виробник : Microchip Technology |
IGBT Transistors IGBT MOS 8 1200 V 70 A TO-264 |
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APT70GR120L | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264 Mounting: THT Power dissipation: 961W Kind of package: tube Gate charge: 412nC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Turn-on time: 81ns Turn-off time: 394ns Type of transistor: IGBT |
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