Технічний опис APT60N60SCSG Microchip Technology
Description: MOSFET N-CH 600V 60A D3PAK, Packaging: Bulk, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V, Power Dissipation (Max): 431W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 3mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Інші пропозиції APT60N60SCSG
Фото | Назва | Виробник | Інформація |
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APT60N60SCSG | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 230A Power dissipation: 431W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT60N60SCSG | Виробник : MICROSEMI |
D3PAK 3/60 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET APT60N60 кількість в упаковці: 1 шт |
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APT60N60SCSG | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 60A D3PAK Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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APT60N60SCSG | Виробник : Microchip Technology | MOSFETs MOSFET COOLMOS 600 V 60 A TO-268 |
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APT60N60SCSG | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 230A Power dissipation: 431W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhanced |
товар відсутній |