APT64GA90LD30 Microsemi Power Products Group
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис APT64GA90LD30 Microsemi Power Products Group
Category: THT IGBT transistors, Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264, Mounting: THT, Case: TO264, Kind of package: tube, Gate charge: 162nC, Collector-emitter voltage: 900V, Collector current: 64A, Gate-emitter voltage: ±30V, Pulsed collector current: 193A, Turn-on time: 44ns, Features of semiconductor devices: integrated anti-parallel diode, Technology: POWER MOS 8®; PT, Power dissipation: 500W, Turn-off time: 352ns, Type of transistor: IGBT.
Інші пропозиції APT64GA90LD30
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT64GA90LD30 | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 900V 117A 500W 3-Pin(3+Tab) TO-264 Tube |
товар відсутній |
|
 |
APT64GA90LD30 | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264 Mounting: THT Case: TO264 Kind of package: tube Gate charge: 162nC Collector-emitter voltage: 900V Collector current: 64A Gate-emitter voltage: ±30V Pulsed collector current: 193A Turn-on time: 44ns Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 500W Turn-off time: 352ns Type of transistor: IGBT |
товар відсутній |
|
 |
APT64GA90LD30 | Виробник : Microchip / Microsemi |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-264 |
товар відсутній |
|
|
|
APT64GA90LD30 | Виробник : Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-264 |
товар відсутній |
|
|
|
APT64GA90LD30 | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264 Mounting: THT Case: TO264 Kind of package: tube Gate charge: 162nC Collector-emitter voltage: 900V Collector current: 64A Gate-emitter voltage: ±30V Pulsed collector current: 193A Turn-on time: 44ns Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 500W Turn-off time: 352ns Type of transistor: IGBT |
товар відсутній |