Технічний опис APT6010LFLLG Microchip Technology
Description: MOSFET N-CH 600V 54A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V.
Інші пропозиції APT6010LFLLG
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APT6010LFLLG | Виробник : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT6010LFLLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 54A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V |
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APT6010LFLLG | Виробник : Microchip Technology |
MOSFETs FREDFET MOS7 600 V 10 Ohm TO-264 |
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APT6010LFLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
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