Технічний опис APT50N60JCCU2 Microchip Technology
Description: MOSFET N-CH 600V 50A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 3mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V.
Інші пропозиції APT50N60JCCU2
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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APT50N60JCCU2 | Виробник : Microchip Technology | Trans MOSFET N-CH 600V 50A 4-Pin SOT-227 Tube |
товару немає в наявності |
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APT50N60JCCU2 | Виробник : MICROCHIP (MICROSEMI) | APT50N60JCCU2 Transistor modules MOSFET |
товару немає в наявності |
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APT50N60JCCU2 | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 50A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
товару немає в наявності |
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APT50N60JCCU2 | Виробник : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SOT227 |
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APT50N60JCCU2 | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; ISOTOP; screw; Idm: 130A; 290W Technology: CoolMOS™ Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 130A Power dissipation: 290W Case: ISOTOP Gate-source voltage: ±20V On-state resistance: 45mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
товару немає в наявності |