APT58M80J Microchip Technology
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Description: MOSFET N-CH 800V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 4608.83 грн |
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Технічний опис APT58M80J Microchip Technology
Description: MOSFET N-CH 800V 60A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V.
Інші пропозиції APT58M80J
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT58M80J | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules FG, MOSFET, 800V, SOT-227 |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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APT58M80J | Виробник : Microchip Technology | Trans MOSFET N-CH Si 800V 60A 4-Pin SOT-227 Tube |
товар відсутній |
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APT58M80J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 60A; ISOTOP; screw; Idm: 325A; 960W Mechanical mounting: screw Drain current: 60A On-state resistance: 0.1Ω Power dissipation: 960W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 325A Semiconductor structure: single transistor Drain-source voltage: 800V кількість в упаковці: 1 шт |
товар відсутній |
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APT58M80J | Виробник : MICROSEMI |
SOT227/POWER MOSFET - MOS8 APT58M80 кількість в упаковці: 1 шт |
товар відсутній |
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APT58M80J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 60A; ISOTOP; screw; Idm: 325A; 960W Mechanical mounting: screw Drain current: 60A On-state resistance: 0.1Ω Power dissipation: 960W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 325A Semiconductor structure: single transistor Drain-source voltage: 800V |
товар відсутній |