![APT50M80LVFRG APT50M80LVFRG](https://ce8dc832c.cloudimg.io/v7/_cdn_/4C/8D/00/00/0/55492_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=218422aa1d96256f4041d372a37f8263511df256)
APT50M80LVFRG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 423nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 423nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис APT50M80LVFRG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 58A, Pulsed drain current: 232A, Power dissipation: 625W, Case: TO264, Gate-source voltage: ±30V, On-state resistance: 80mΩ, Mounting: THT, Gate charge: 423nC, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції APT50M80LVFRG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
APT50M80LVFRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 58A; Idm: 232A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 58A Pulsed drain current: 232A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 423nC Kind of channel: enhanced |
товар відсутній |