на замовлення 46 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 991.38 грн |
| 10+ | 976.41 грн |
| 25+ | 798.45 грн |
| 100+ | 761.19 грн |
| 250+ | 752.06 грн |
| 500+ | 745.73 грн |
| 1000+ | 742.92 грн |
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Технічний опис APT56F50L Microchip Technology
Description: MOSFET N-CH 500V 56A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V.
Інші пропозиції APT56F50L
| Фото | Назва | Виробник | Інформація |
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APT56F50L | Виробник : Microchip Technology |
 Trans MOSFET N-CH Si 500V 56A 3-Pin(3+Tab) TO-264 Tube |
товар відсутній |
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APT56F50L | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 175A; 780W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 175A Power dissipation: 780W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 0.22µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT56F50L | Виробник : Microchip Technology |
Description: MOSFET N-CH 500V 56A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V |
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APT56F50L | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 175A; 780W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 175A Power dissipation: 780W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 0.22µC Kind of channel: enhanced |
товар відсутній |