Технічний опис APT50GR120B2 Microchip Technology
Description: IGBT 1200V 117A 694W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 28ns/237ns, Switching Energy: 2.14mJ (on), 1.48mJ (off), Test Condition: 600V, 50A, 4.3Ohm, 15V, Gate Charge: 445 nC, Current - Collector (Ic) (Max): 117 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 694 W.
Інші пропозиції APT50GR120B2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
APT50GR120B2 | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT кількість в упаковці: 1 шт |
товар відсутній |
|
![]() |
APT50GR120B2 | Виробник : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 28ns/237ns Switching Energy: 2.14mJ (on), 1.48mJ (off) Test Condition: 600V, 50A, 4.3Ohm, 15V Gate Charge: 445 nC Current - Collector (Ic) (Max): 117 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 694 W |
товар відсутній |
|
APT50GR120B2 | Виробник : Microchip Technology |
![]() |
товар відсутній |
||
![]() |
APT50GR120B2 | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT |
товар відсутній |