Технічний опис APT50GP60JDQ2 Microchip Technology
Description: IGBT MOD 600V 100A 329W ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 329 W, Current - Collector Cutoff (Max): 525 µA, Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V.
Інші пропозиції APT50GP60JDQ2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT50GP60JDQ2 | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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APT50GP60JDQ2 | Виробник : Microchip Technology |
Description: IGBT MOD 600V 100A 329W ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 329 W Current - Collector Cutoff (Max): 525 µA Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V |
товар відсутній |
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APT50GP60JDQ2 | Виробник : Microchip Technology | IGBT Modules IGBT PT MOS 7 Combi 600 V 50 A SOT-227 |
товар відсутній |
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APT50GP60JDQ2 | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
товар відсутній |