IPD95R1K2P7ATMA1 Infineon Technologies
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 38.7 грн |
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Технічний опис IPD95R1K2P7ATMA1 Infineon Technologies
Description: MOSFET N-CH 950V 6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 140µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V.
Інші пропозиції IPD95R1K2P7ATMA1 за ціною від 38.17 грн до 114.8 грн
| Фото | Назва | Виробник | Інформація |
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IPD95R1K2P7ATMA1 | Виробник : Infineon Technologies |
 MOSFETs N |
на замовлення 2464 шт: термін постачання 21-30 дні (днів) |
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IPD95R1K2P7ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK Polarisation: unipolar Kind of package: reel Power dissipation: 52W Type of transistor: N-MOSFET On-state resistance: 1.2Ω Drain current: 3.7A Features of semiconductor devices: ESD protected gate Gate charge: 15nC Drain-source voltage: 950V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Mounting: SMD кількість в упаковці: 1 шт |
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IPD95R1K2P7ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 950V 6A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V |
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IPD95R1K2P7ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 950V 6A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V |
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IPD95R1K2P7ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK Polarisation: unipolar Kind of package: reel Power dissipation: 52W Type of transistor: N-MOSFET On-state resistance: 1.2Ω Drain current: 3.7A Features of semiconductor devices: ESD protected gate Gate charge: 15nC Drain-source voltage: 950V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Mounting: SMD |
товар відсутній |