RXH125N03TB1 ROHM Semiconductor
на замовлення 1518 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.94 грн |
| 10+ | 78.16 грн |
| 100+ | 52.71 грн |
| 500+ | 44.7 грн |
| 1000+ | 36.41 грн |
| 2500+ | 34.16 грн |
| 5000+ | 32.54 грн |
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Технічний опис RXH125N03TB1 ROHM Semiconductor
Description: MOSFET N-CH 30V 12.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V.
Інші пропозиції RXH125N03TB1
| Фото | Назва | Виробник | Інформація |
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RXH125N03TB1 | Виробник : ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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RXH125N03TB1 | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 12.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
товар відсутній |
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RXH125N03TB1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |