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RTR030N05HZGTL Rohm Semiconductor
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Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
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3000+ | 21.63 грн |
6000+ | 19.73 грн |
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Технічний опис RTR030N05HZGTL Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції RTR030N05HZGTL за ціною від 17.99 грн до 61.01 грн
Фото | Назва | Виробник | Інформація |
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RTR030N05HZGTL | Виробник : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 8329 шт: термін постачання 21-31 дні (днів) |
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RTR030N05HZGTL | Виробник : ROHM Semiconductor |
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на замовлення 14397 шт: термін постачання 21-30 дні (днів) |
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RTR030N05HZGTL | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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RTR030N05HZGTL | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |