RUF020N02TL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: MOSFET N-CH 20V 2A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.1 грн |
6000+ | 9.1 грн |
15000+ | 8.47 грн |
30000+ | 7.54 грн |
75000+ | 7.36 грн |
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Технічний опис RUF020N02TL Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TUMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V.
Інші пропозиції RUF020N02TL за ціною від 7.84 грн до 31.22 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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RUF020N02TL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 20V 2A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
на замовлення 86313 шт: термін постачання 21-31 дні (днів) |
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RUF020N02TL | Виробник : ROHM Semiconductor | MOSFET Trans MOSFET N-CH 20V 2A |
на замовлення 6841 шт: термін постачання 21-30 дні (днів) |
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RUF020N02TL |
на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
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RUF020N02TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 6A кількість в упаковці: 1 шт |
товар відсутній |
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RUF020N02TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 6A |
товар відсутній |