RTL020P02FRATR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET P-CH 20V 2A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.75 грн |
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Технічний опис RTL020P02FRATR Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RTL020P02FRATR за ціною від 7.9 грн до 31.35 грн
| Фото | Назва | Виробник | Інформація |
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RTL020P02FRATR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4408 шт: термін постачання 21-31 дні (днів) |
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RTL020P02FRATR | Виробник : ROHM Semiconductor |
MOSFET Pch -20V Vds -2A 0.18Rds(on) 4.9Qg |
на замовлення 3183 шт: термін постачання 21-30 дні (днів) |
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| RTL020P02FRATR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6 Mounting: SMD Case: TUMT6 Kind of package: reel; tape Power dissipation: 1W Type of transistor: P-MOSFET Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -8A Drain-source voltage: -20V On-state resistance: 0.25Ω Drain current: -2A Polarisation: unipolar Gate charge: 4.9nC кількість в упаковці: 1 шт |
товар відсутній |
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| RTL020P02FRATR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6 Mounting: SMD Case: TUMT6 Kind of package: reel; tape Power dissipation: 1W Type of transistor: P-MOSFET Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -8A Drain-source voltage: -20V On-state resistance: 0.25Ω Drain current: -2A Polarisation: unipolar Gate charge: 4.9nC |
товар відсутній |