SCS108AGC ROHM SEMICONDUCTOR
Виробник: ROHM SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Power dissipation: 75W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Heatsink thickness: max. 1.27mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 35A
Max. forward voltage: 1.7V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 110A
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис SCS108AGC ROHM SEMICONDUCTOR
Description: DIODE SIL CARB 600V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 345pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 160 µA @ 600 V.
Інші пропозиції SCS108AGC
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCS108AGC | Виробник : Rohm Semiconductor |
Description: DIODE SIL CARB 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 345pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 160 µA @ 600 V |
товар відсутній |
|
 |
SCS108AGC | Виробник : ROHM Semiconductor |
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 8A |
товар відсутній |
|
|
|
SCS108AGC | Виробник : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V Power dissipation: 75W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Heatsink thickness: max. 1.27mm Mounting: THT Case: TO220AC Max. off-state voltage: 0.6kV Max. load current: 35A Max. forward voltage: 1.7V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 110A |
товар відсутній |